Method for producing gallium nitride crystal by reacting metal gallium and iron nitride

Patent metadata

Field	Value
Publication number	US-9890471-B2
Application number	US-201414916055-A
Country	US
Kind code	B2
Filing date	Sep 3, 2014
Priority date	Sep 9, 2013
Publication date	Feb 13, 2018
Grant date	Feb 13, 2018

Abstract

[Object] To provide a production method capable of producing a gallium nitride crystal at a lower pressure.
[Solution] Provided is a method for producing a gallium nitride crystal, the method including a step of heating metal gallium and iron nitride in a nitrogen atmosphere at least to a reaction temperature at which the metal gallium and the iron nitride react.

First claim

The invention claimed is:

1. A method for producing a gallium nitride crystal, the method comprising:
heating metal gallium and iron nitride in a nitrogen atmosphere at least to a reaction temperature at which the metal gallium and the iron nitride react,
wherein a proportion of a number of moles of an iron element in the iron nitride to a total number of moles of the metal gallium and the iron element in the iron nitride is equal to or more than 0.1% and equal to or less than 30.8%.

2. The method for producing a gallium nitride crystal according to claim 1 ,
wherein the iron nitride contains at least one of tetrairon mononitride, triiron mononitride, and diiron mononitride.

3. The method for producing a gallium nitride crystal according to claim 1 ,
wherein the reaction temperature is equal to or more than 500° C. and equal to or less than 1000° C., and
wherein the method further comprises keeping the metal gallium and the iron nitride at a temperature in a range of the reaction temperature after the metal gallium and the iron nitride are heated to the reaction temperature.

4. The method for producing a gallium nitride crystal according to claim 1 ,
wherein the metal gallium and the iron nitride are heated using a crucible made of boron nitride as a vessel.

5. The method for producing a gallium nitride crystal according to claim 1 ,
wherein, when the reaction temperature is denoted by T [° C.], a proportion X [%] of the number of moles of an iron element in the iron nitride to the total number of moles of the metal gallium and the iron element in the iron nitride satisfies Mathematical Formula 1 below:
X≦− 1.44×10 −2 ×T+ 14.4  Mathematical Formula 1.

6. The method for producing a gallium nitride crystal according to claim 1 , further comprising:
increasing a temperature of the metal gallium and the iron nitride above the reaction temperature by between approximately 1° C. and 6° C. per hour after the metal gallium and the iron nitride are heated to the reaction temperature.

7. The method for producing a gallium nitride crystal according to claim 1 ,
wherein heating the metal gallium and iron nitride method further comprises increasing a temperature of the metal gallium and the iron nitride by between approximately 60° C. and 100° C. per hour until the metal gallium and the iron nitride are heated to the reaction temperature.

8. The method for producing a gallium nitride crystal according to claim 1 ,
wherein the metal gallium and the iron nitride are heated as a molten liquid and at least one crystal growth substrate is immersed in the molten liquid in order to form the gallium nitride crystal on a surface of the at least one crystal growth substrate.

9. The method for producing a gallium nitride crystal according to claim 8 ,
wherein the at least one crystal growth substrate is attached to a rotatable shaft horizontal to an upper surface of the molten liquid.

10. The method for producing a gallium nitride crystal according to claim 9 ,
wherein the rotatable shaft is rotated while the at least one crystal growth substrate is immersed in the molten liquid.

11. The method for producing a gallium nitride crystal according to claim 8 ,
wherein the at least one crystal growth substrate comprises a plurality of crystal growth substrates attached horizontally parallel to one another.

12. The method for producing a gallium nitride crystal according to claim 8 ,
wherein the at least one crystal growth substrate comprises at least one sapphire substrate.

13. The method for producing a gallium nitride crystal according to claim 1 ,
wherein the gallium nitride crystal is formed as a film having an average thickness of between approximately 2.2 μm and 2.4 μm.

Assignees

• Dexerials Corp

Inventors

• Watanabe Makoto
• Akiyama Shinya
• Matsumoto Tatsuya

Classifications

• H10P14/3416

  Nitrides · CPC title

• H10P14/2921

  being crystalline insulating materials · CPC title

• H10P14/265

  using solutions · CPC title

• C30B17/00

  Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method (C30B15/00 takes precedence) · CPC title

• C01P2004/61

  Micrometer sized, i.e. from 1-100 micrometer · CPC title