Semi-insulating compound semiconductor substrate and semi-insulating compound semiconductor single crystal
US-2019371620-A1 · Dec 5, 2019 · US
Gallium arsenide
Gallium arsenide · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C30B29/42 |
| Official title | Gallium arsenide |
| Display label | Gallium arsenide |
| Total patents | 183 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly declining.
| Year | Patents |
|---|---|
| 2015 | 10 |
| 2016 | 10 |
| 2017 | 14 |
| 2018 | 11 |
| 2019 | 16 |
| 2020 | 13 |
| 2021 | 28 |
| 2022 | 19 |
| 2023 | 30 |
| 2024 | 21 |
| 2025 | 11 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
LAYERED GaAs, METHOD OF PREPARING SAME, AND GaAs NANOSHEET EXFOLIATED FROM SAME
US-2019352799-A1 · Nov 21, 2019 · US
Gallium-arsenide-based compound semiconductor crystal and wafer group
US-2019352800-A1 · Nov 21, 2019 · US
Method for cleaning exhaust passage for semiconductor crystal manufacturing device
US-10458044-B2 · Oct 29, 2019 · US
Gallium arsenide crystal body and gallium arsenide crystal substrate
US-2019264348-A1 · Aug 29, 2019 · US
GaAs SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
US-2019257002-A1 · Aug 22, 2019 · US
GaAs CRYSTAL
US-2019226119-A1 · Jul 25, 2019 · US
Hydride enhanced growth rates in hydride vapor phase epitaxy
US-2019221705-A1 · Jul 18, 2019 · US
Method for determining preferential deposition parameters for a thin layer of III-V material
US-10354870-B2 · Jul 16, 2019 · US
Off-axis epitaxial lift off process
US-10337087-B2 · Jul 2, 2019 · US
GaAs crystal
US-10301744-B2 · May 28, 2019 · US
Single-crystal pulling apparatus and single-crystal pulling method
US-10253425-B2 · Apr 9, 2019 · US
Nanowire device having graphene top and bottom electrodes and method of making such a device
US-10243104-B2 · Mar 26, 2019 · US
Architectures Enabling Back Contact Bottom Electrodes For Semiconductor Devices
US-2019074393-A1 · Mar 7, 2019 · US
Continuous system for fabricating multilayer heterostructures via hydride vapor phase epitaxy
US-10190234-B1 · Jan 29, 2019 · US
Ultra long lifetime gallium arsenide
US-10156023-B2 · Dec 18, 2018 · US
Selective nanoscale growth of lattice mismatched materials
US-10109480-B2 · Oct 23, 2018 · US
CRYSTAL AND SUBSTRATE OF CONDUCTIVE GaAs, AND METHOD FOR FORMING THE SAME
US-2018261354-A1 · Sep 13, 2018 · US
Single-crystal pulling apparatus and single-crystal pulling method
US-2018237940-A1 · Aug 23, 2018 · US
Off-axis epitaxial lift process
US-2018209018-A1 · Jul 26, 2018 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC C30B29/42?
- CPC C30B29/42 is the Cooperative Patent Classification code for “Gallium arsenide.”
- How many patents are filed under CPC C30B29/42 (Gallium arsenide)?
- Our database includes 183 publications tagged with this CPC code.
- Is patent activity under CPC C30B29/42 growing?
- Publication counts under this code: 21 in 2024 vs 11 in 2025 (latest complete years).