Method for determining preferential deposition parameters for a thin layer of III-V material

Patent metadata

Field	Value
Publication number	US-10354870-B2
Application number	US-201514933554-A
Country	US
Kind code	B2
Filing date	Nov 5, 2015
Priority date	Nov 5, 2014
Publication date	Jul 16, 2019
Grant date	Jul 16, 2019

Abstract

First, second and third series of samples are successively made so as to determine the influence of the deposition parameters on the crystallographic quality of a layer of semiconductor material of III-V type. The parameters studied are successively the deposition pressure, the deposition temperature and the deposited thickness of a sub-layer of semiconductor material of III-V type so as to respectively determine a first deposition pressure, a first deposition temperature at the first deposition pressure, and a first deposited thickness at the first deposition temperature and at the first deposition pressure. The sub-layer of semiconductor material of III-V type is thickened by ways of a second layer of semiconductor material of III-V type deposited under different conditions.

First claim

The invention claimed is:

1. A method for determining deposition parameters of a first layer made from semiconductor material of III-V type in a sample successively comprising:
a monocrystalline layer of relaxed germanium epitaxially grown from a first surface of crystalline orientation of (001) type of a monocrystalline silicon layer, the first surface presenting a misalignment of less than 1° with respect to a (001) plane,
a first monocrystalline layer made from semiconductor material of III-V type formed by organometallic chemical vapor deposition,
a second monocrystalline layer made from semiconductor material of III-V type formed by organometallic chemical vapor deposition, a stack formed by the first and second monocrystalline layers of semiconductor material of III-V type, the second monocrystalline layer being deposited with predetermined pressure and temperature conditions,

the method comprising:
making a first series of samples in which for each sample the first layer of semiconductor material of III-V type having a first thickness is covered by the second layer of semiconductor material having a second thickness, the deposition conditions of the first layer of semiconductor material of III-V type being chosen such that the deposition pressure differs between the samples of the first series, the deposition temperature being identical between the samples of the first series and equal to an initial deposition temperature, comprised between 495° C. and 615° C., the deposition pressure varying between 20 Torr and 450 Torr,
determining a first deposition pressure from the deposition pressures of the first series of samples and by means of at least a first parameter representative of a crystalline quality of the stack formed by the first and second monocrystalline layers of semiconductor material of III-V type,
making a second series of samples in which for each sample the first layer of semiconductor material of III-V type having the first thickness is covered by the second layer of semiconductor material of III-V type having the second thickness, the deposition conditions of the first layer of semiconductor material of III-V type being chosen such that the deposition temperature differs between the samples of the second series, the deposition pressure being identical between the samples of the second series and equal to the first deposition pressure, the deposition temperature varying between 495° C. and 615° C.,
determining a first deposition temperature from the deposition temperatures of the second series of samples and by means of a second parameter representative of the crystalline quality of the stack formed by the first and second monocrystalline layers of semiconductor material of III-V type,
wherein the first deposition temperature and the first deposition pressure are different from the predetermined pressure and temperature conditions for depositing the second monocrystalline layer and wherein the first and second monocrystalline layers made from semiconductor material of III-V type covers a maximum of the monocrystalline layer of relaxed germanium.

2. The method for determining according to claim 1 , comprising:
making a third series of samples in which the first layer of semiconductor material of III-V type is covered by the second layer of semiconductor material of III-V type, the thickness of the stack formed by the first and second monocrystalline layers of semiconductor material of III-V type being constant, the deposition conditions of the first layer of semiconductor material of III-V type being chosen such that the deposited thickness differs between the samples of the third series, the deposition pressure being identical between the samples of the third series and equal to the first deposition pressure, the deposition temperature being equal between the samples of the third series and equal to the first deposition temperature,
determining a third deposition thickness of the first layer of semiconductor material of III-V type from the third series of samples by means of a third parameter representative of the crystalline quality of the stack formed by the first and second monocrystalline layers of semiconductor material of III-V type.

3. The method for determining according to claim 1 , wherein the second layer of semiconductor material of III-V type of each first and second series of samples is deposited at a pressure equal to 20 Torr and at a temperature equal to 615° C.

4. The method for determining according to claim 1 , wherein the first thickness of the first layer of semiconductor material of III-V type is comprised between 10 nm and 80 nm.

5. The method for determining according to claim 4 , wherein the first thickness of the first layer of semiconductor material of III-V type is comprised between 15 nm and 50 nm.

6. The method for determining according to claim 5 , wherein the first thickness of the first layer of semiconductor material of III-V type is comprised between 20 and 40 nm.

7. The method for determining according to claim 1 , wherein the initial deposition temperature is comprised between 500° C. and 550° C.

8. The method for determining according to claim 7 , wherein the initial deposition temperature is comprised between 515° C. and 540° C.

9. The method for determining according to claim 1 , wherein the monocrystalline germanium layer is produced by means of a first deposition of a first germanium layer at a temperature of less than 500° C. followed by a second deposition of a second germanium layer at a temperature of more than 500° C.

10. The method for determining according to claim 1 , wherein the semiconductor material of III-V type of the first monocrystalline layer and of the second monocrystalline layer is chosen from GaAs, InP and the following ternary alloys: AlGaAs, InGaAs with an indium concentration less than or equal to 10%.

11. The method for determining according to claim 1 , wherein the first parameter is a slope break in a curve representative of a defect density visible by optic microscopic according to the deposition pressure.

12. The method for determining according to claim 1 , wherein the second parameter is an extremum in a curve representative of a defect density visible by optic microscopic according to the deposition temperature.

13. The method for determining according to claim 2 , wherein the third parameter is an extremum in a curve representative of a defect density visible by optic microscopic according to the thickness of the first layer of semiconductor material of III-V type.

14. A method for determining deposition parameters of a first layer made from semiconductor material of III-V type in a sample successively comprising:
a monocrystalline layer of relaxed germanium epitaxially grown from a first surface of crystalline orientation of (001) type of a monocrystalline silicon layer, the first surface presenting a misalignment of less than 1° with respect to a (001) plane,
a first monocrystalline layer made from semiconductor material of III-V type formed by organometallic chemical vapor deposition,
a second monocrystalline layer made from semiconductor material of III-V type formed by organometallic chemical vapor deposition, a stack formed by the first and second monocrystalline layers of semiconductor material of III-V type, the second monocrystalline layer being deposited with predetermined pressure and temperature conditions,

the method comprising:
making a first series of samples in which for each sample the first layer of semiconductor material of III-V type having a first thickness is covered by the second layer of semiconductor mat

Assignees

• Commissariat Energie Atomique

Inventors

• Bogumilowicz Yann
• Hartmann Jean-Michel

Classifications

• H10P14/3421

  Arsenides · CPC title

• H10P14/3418

  Phosphides · CPC title

• H10P14/3251

  consisting of three or more layers · CPC title

• H10P14/3221

  Arsenides · CPC title

• H10P14/3218

  Phosphides · CPC title