Method for cleaning exhaust passage for semiconductor crystal manufacturing device
US-2017314162-A1 · Nov 2, 2017 · US
GaAs crystal
US10301744B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10301744-B2 |
| Application number | US-201515323128-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 27, 2015 |
| Priority date | Jul 17, 2014 |
| Publication date | May 28, 2019 |
| Grant date | May 28, 2019 |
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Abstract
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A GaAs crystal has Δx(1) not greater than 20 cm −1 in an expression 1 Δ x ( 1 ) = ∑ i = 1 s x i - x BL s Expression 1 where x i represents a Raman shift of a first peak attributed to oscillation of a longitudinal optical phonon of GaAs in a Raman spectrum measured at an ith point in measurement of Raman spectra at s points in a (100) plane, x BL represents a Raman shift of an emission line peak of neon, and i and s are each a natural number greater than 0.
First claim
Opening claim text (preview).
The invention claimed is: 1. A GaAs crystal having Δx(1) not smaller than 0.3 cm −1 and not greater than 20 cm −1 which is expressed in an expression 1 below, where x i represents a Raman shift of a first peak attributed to oscillation of a longitudinal optical phonon of GaAs in a Raman spectrum measured at an ith point in measurement of Raman spectra at s points in a (100) plane, x BL represents a Raman shift of an emission line peak of neon, and i and s are each a natural number greater than 0, Δ x ( 1 ) = ∑ i = 1 s x i - x BL s , Expression 1 the GaAs crystal being a semi-insulating GaAs crystal having a carrier concentration not higher than 10 7 /cm 3 . 2. The GaAs crystal according to claim 1 , wherein an average value of a full width at half maximum of the first peak is not greater than 5 cm −1 . 3. The GaAs crystal according to claim 1 , the GaAs crystal having a diameter not smaller than 101.6 mm.
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Classifications
Electricity · mapped topic
- C30B29/42Primary
Gallium arsenide · CPC title
Electricity · mapped topic
comprising only Group III-V materials, e.g. GaP · CPC title
Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 (active-matrix LED displays H10H29/30) · CPC title
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- What does patent US10301744B2 cover?
- A GaAs crystal has Δx(1) not greater than 20 cm −1 in an expression 1 Δ x ( 1 ) = ∑ i = 1 s x i - x BL s Expression 1 where x i represents a Raman shift of a first peak attributed to oscillation of a longitud…
- Who is the assignee on this patent?
- Sumitomo Electric Industries
- What technology area does this patent fall under?
- Primary CPC classification C30B29/42. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue May 28 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).