METHOD FOR PRODUCING P-TYPE SiC SINGLE CRYSTAL
US-2017283982-A1 · Oct 5, 2017 · US
SiC single crystal and method for producing same
US10519565B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10519565-B2 |
| Application number | US-201715592500-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 11, 2017 |
| Priority date | May 12, 2016 |
| Publication date | Dec 31, 2019 |
| Grant date | Dec 31, 2019 |
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Abstract
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A low-resistance p-type SiC single crystal containing no inclusions is provided. A method for producing a SiC single crystal in which a SiC seed crystal substrate is contacted with a Si—C solution having a temperature gradient such that a temperature of the Si—C solution decreases from an interior of the Si—C solution toward a surface of the Si—C solution, to grow the SiC single crystal, wherein the Si—C solution comprises Si, Cr, Al and B, and wherein the Al is comprised in the Si—C solution in an amount of 10 at % or greater, based on the total of the Si, Cr, Al and B, and the B is comprised in the Si—C solution in an amount of greater than 0.00 at % and no greater than 1.00 at %, based on the total of the Si, Cr, Al and B.
First claim
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What is claimed is: 1. A method for producing a p-type SiC single crystal in which a SiC seed crystal substrate is contacted with a Si—C solution having a temperature gradient such that a temperature of the Si—C solution decreases from an interior of the Si—C solution toward a surface of the Si—C solution, to grow the p-type SiC single crystal, wherein the Si—C solution comprises Si, Cr, Al and B, the Al is comprised in the Si—C solution in an amount of 10 at % or greater, based on the total of the Si, Cr, Al and B, the B is comprised in the Si—C solution in an amount of greater than 0.00 at % and no greater than 1.00 at %, based on the total of the Si, Cr, Al and B, and the p-type SiC single crystal has a resistivity of 9 to 29 mΩ·cm. 2. The method for producing a p-type SiC single crystal according to claim 1 , wherein the B is comprised in the Si—C solution in an amount of between 0.03 at % and 1.00 at %, inclusive, based on the total of the Si, Cr, Al and B. 3. The method for producing a p-type SiC single crystal according to claim 2 , wherein the B is comprised in the Si—C solution in an amount of between 0.03 at % and 0.30 at %, inclusive, based on the total of the Si, Cr, Al and B. 4. The method for producing a p-type SiC single crystal according to claim 1 , wherein the B is comprised in the Si—C solution in an amount of between 0.03 at % and 0.30 at %, inclusive, based on the total of the Si, Cr, Al and B. 5. The method for producing a p-type SiC single crystal according to claim 1 , wherein the Al is comprised in the Si—C solution in an amount of 25 at % or greater, based on the total of the Si, Cr, Al and B. 6. The method for producing a p-type SiC single crystal according to claim 1 , wherein the p-type SiC single crystal has a resistivity of 9 to 15 mΩ·cm. 7. The method for producing a p-type SiC single crystal according to claim 1 , wherein the p-type SiC single crystal has a resistivity of 9 to 15 mΩ·cm, and the B is comprised in the Si—C solution in an amount of between 0.03 at % and 0.30 at %, inclusive, based on the total of the Si, Cr, Al and B.
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Classifications
- C30B19/062Primary
Vertical dipping system · CPC title
the solvent being a component of the crystal composition · CPC title
- C30B29/36Primary
Carbides · CPC title
using as solvent a component of the crystal composition · CPC title
- C30B11/003Primary
Heating or cooling of the melt or the crystallised material · CPC title
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- What does patent US10519565B2 cover?
- A low-resistance p-type SiC single crystal containing no inclusions is provided. A method for producing a SiC single crystal in which a SiC seed crystal substrate is contacted with a Si—C solution having a temperature gradient such that a temperature of the Si—C solution decreases from an interior of the Si—C solution toward a surface of the Si—C solution, to grow the SiC single crystal, wherei…
- Who is the assignee on this patent?
- Toyota Motor Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification C30B19/062. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Dec 31 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).