METHOD FOR PRODUCING P-TYPE SiC SINGLE CRYSTAL
US-2017283982-A1 · Oct 5, 2017 · US
SiC single crystal and method for producing same
US10415152B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10415152-B2 |
| Application number | US-201615195071-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 28, 2016 |
| Priority date | Jul 9, 2015 |
| Publication date | Sep 17, 2019 |
| Grant date | Sep 17, 2019 |
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Abstract
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A p-type SiC single crystal having lower resistivity than the prior art is provided. This is achieved by a method for producing a SiC single crystal in which a SiC seed crystal substrate is contacted with a Si—C solution having a temperature gradient such that the temperature decreases from the interior toward the surface, to grow a SiC single crystal, the method comprising: using as the Si—C solution a Si—C solution containing Si, Cr and Al, wherein the Al content is 3 at % or greater based on the total of Si, Cr and Al; and contacting a (0001) face of the SiC seed crystal substrate with the Si—C solution to grow a SiC single crystal from the (0001) face.
First claim
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What is claimed is: 1. A method for producing a p-type SiC single crystal in which a SiC seed crystal substrate is contacted with a Si—C solution having a temperature gradient such that the temperature decreases from the interior toward the surface, to grow a p-type SiC single crystal, the method comprising: using as the Si—C solution a Si—C solution containing Si, Cr and Al, wherein the Al content is 7 at % or greater based on the total of Si, Cr and Al; and contacting a (0001) face of the SiC seed crystal substrate with the Si—C solution to grow a p-type SiC single crystal from the (0001) face while forming a meniscus such that the position of the (0001) face of the SiC seed crystal substrate is held at a position 1 to 3 mm above the Si—C solution surface, wherein the p-type SiC single crystal has an Al concentration of 2.0×10 20 to 6.0×10 20 /cm 3 and a resistivity of 10 to 30 mΩ·cm.
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Classifications
Silicon carbide · CPC title
- C30B19/106Primary
adding crystallising material or reactants forming it in situ to the liquid · CPC title
characterised by the substrate · CPC title
- C30B29/36Primary
Carbides · CPC title
the solvent being a component of the crystal composition · CPC title
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- What does patent US10415152B2 cover?
- A p-type SiC single crystal having lower resistivity than the prior art is provided. This is achieved by a method for producing a SiC single crystal in which a SiC seed crystal substrate is contacted with a Si—C solution having a temperature gradient such that the temperature decreases from the interior toward the surface, to grow a SiC single crystal, the method comprising: using as the Si—C s…
- Who is the assignee on this patent?
- Toyota Motor Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification C30B19/106. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Sep 17 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).