Method for preparing single-crystal cubic sesquioxides and uses

US9945049B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9945049-B2
Application numberUS-201414903761-A
CountryUS
Kind codeB2
Filing dateJul 23, 2014
Priority dateJul 24, 2013
Publication dateApr 17, 2018
Grant dateApr 17, 2018

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Abstract

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The present invention relates to a process for the preparation of hulk or thin-film single-crystals of cubic sesquioxides (space group No. 206, Ia-3) of scandium, yttrium or rare earth metals doped or not doped with lanthanide ions having a valency of +III by a high-temperature flux growth technique and to the applications of the nondoped single-crystals obtained according to this process, in particular in the optical field.

First claim

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The invention claimed is: 1. A process for the preparation of a bulk or thin-film single-crystal formed of a matrix of a cubic sesquioxide of scandium, yttrium and/or rare earth metal, said matrix being doped or not doped with at least one element of the series of the lanthanides, said single-crystal corresponding to the following formula (I): (R 1 1−x R 2 x ) 2 O 3   (I) in which: R 1 is at least one metal with a valency of III selected from the group consisting of scandium, yttrium and the elements of the series of the lanthanides; x is such that 0≤x<1; R 2 represents at least one element selected from the group consisting of from the series of the lanthanides; said process being carried out in a chemically inert crucible and comprising the following stages: 1) preparing a pulverulent mixture (PM1) comprising at least: a solute composed of at least one sesquioxide of following formula (IIa): R′ 1 2 O 3   (IIa), in which R′ 1 represents the same element as R 1 , and, when said matrix is doped with at least one element of the series of the lanthanides, of at least one sesquioxide of following formula (IIb): R′ 2 2 O 3   (IIb), in which R′ 2 represents the same element as R 2 , in a molar percentage (x mp ) such that 0<x mp ≤25 mol %, said sesquioxide of formula (IIa) is present within said solute in a molar percentage 100−x mp , said solute being present within the mixture PM1 in an amount z such that 0<z≤93 mol %, a primary solvent composed of a mechanical mixture of a compound of following formula (III): [Li 6 (R″ 1 1−x′ R″ 2 x′ )(BO 3 ) 3 ]  (III) in which R″ 1 and R″ 2 respectively represent the same element as R 1 and R 2 and x′ is such that 0≤x′<1; 2) preparing a pulverulent mixture PM2 comprising said solute and a synthesis solvent of following formula (IV): [Li 6 (R″ 1 1−x′ R″ 2 x′ (BO 3 ) 3 ]+(Li 2 O and/or B 2 O 3 and/or LiX)  (IV) in which R″ 1 and R″ 2 respectively represent the same element as R 1 and R 2 , x′ is such that 0≤x′<1, and X=F, Cl, Br or I, by addition to the mixture PM1 of at least one pulverulent additive selected from the group consisting of Li 2 O, B 2 O 3 and LiX with X=F, Cl, Br or I, said mixture PM1 being present within the mixture PM2 in an amount z′ such that 15≤z′<100 mol %, said additive being present within the mixture MP2 in a total molar amount s such that 0<s≤85 mol %, and s=100−z′ in the mixture PM2; the molar amount z″ of the solute within the mixture PM2 being such that z″=z.z′; 3) bringing the pulverulent mixture PM2 obtained above in stage 2) to a temperature T PM2 at least equal to the melting point (T M.p ) of said mixture PM2 and ≤1250° C., in order to bring about the dissolution of the solute in the synthesis solvent of formula (IV) and to obtain a liquid solution of said solute in the synthesis solvent of formula (IV); 4) maintaining the temperature of the liquid solution at the temperature T PM2 for a period of time of at least 6 hours, with stirring by means of a solid support subjected to rotation around a vertical axis; 5) cooling, in controlled fashion, the liquid solution from the temperature T PM2 down to a temperature T Exp between the saturation temperature (T Sat ) of the liquid solution and the critical supersaturation temperature (CT Super ) of the liquid solution or the temperature of solidification of the liquid solution, in order to bring about the controlled crystallization of the expected sesquioxide of formula (I) on said solid support immersed in said liquid solution and subjected to rotation around a vertical axis, said cooling being carried out at a maximum rate of 1° C.·h −1 ; and 6) withdrawing the solid support from the liquid solution and then cooling, in controlled fashion, the sesquioxide of formula (I) crystallized on the solid support from the temperature T Exp down to ambient temperature, at a maximum rate of 50° C.·h −1 . 2. The process according to claim 1 , wherein the stages 1) and 2) are carried out jointly, the molar amount (z″) of the solute within the mixture PM2 then being such that z″ =z·z′ mol %, the molar amount of the primary solvent of formula (III) (t) being such that t=z′(100−z) mol % and the molar amount of additive being s mol %, with s=(100−z′) %. 3. The process according to claim 1 , wherein R 1 is selected from the group consisting of the elements Y, Gd, Tb, Eu, Sc, Lu; the combinations of elements Y/Gd, Y/Sc, Gd/Sc, Lu/Sc, Gd/La, Gd/Tb, Gd/Lu, Y/Lu, Eu/Gd, Eu/La and Eu/Lu. 4. The process according to claim 1 , wherein, when x>0, R 2 is selected from the group consisting of the elements Yb, Tm, Er, Pr, Tb, Nd, Ce, Ho, Eu, Sm, Dy, the combinations of elements Yb/Tm, Yb/Pr, Tm/Ho, Er/Yb, Yb/Tb, Yb/Ho, Eu/Sm and Tm/Tb. 5. The process according to claim 1 , wherein said process is employed for the preparation of sesquioxides of formula (I) selected from the group consisting of: Tb 2 O 3 ; Gd 2 O 3 ; Eu 2 O 3 ; Y 2 O 3 ; Lu 2 O 3 ; Sc 2 O 3 ; (Tb,Gd) 2 O 3 ; (Eu,Gd) 2 O 3 ; Lu 2 O 3 :Yb; Gd 2 O 3 :Yb; Lu 2 O 3 :Eu; Gd 2 O 3 :Eu; Y 2 O 3 :Eu; Y 2 O 3 :Er; Gd 2 O 3 :Tm; Gd 2 O 3 :Eu 3+ ; (Y,Gd) 2 O 3 :Pr; (Y,Gd) 2 O 3 :Eu; (Y,Gd) 2 O 3 :Nd; (Y,La) 2 O 3 :Pr; (Gd,La) 2 O 3 :Pr; (Gd,La) 2 O 3 :Yb; (Gd,La) 2 O 3 :Eu; (Gd,La) 2 O 3 :Nd; (Y,La) 2 O 3 :Yb; Y 2 O 3 :Er:Yb; Y 2 O 3 :Pr:Yb; Gd 2 O 3 :Er:Yb; Gd 2 O 3 :Pr:Yb; Gd 2 O 3 :Tm:Yb; Lu 2 O 3 :Tm:Yb; Y 2 O 3 :Tm:Ho; Y 2 O 3 m:Yb; Y 2 O 3 :Tm: Tb; Sc 2 O 3 :Eu; (Y,Lu) 2 O 3 :Eu and (Gd,Lu) 2 O 3 :Eu. 6. The process according to claim 1 , wherein the amount z″ of solute present within the pulverulent mixture PM2 is such that 5≤z″≥30 mol %. 7. The process according to claim 1 , wherein the amount s of Li 2 O and/or of B 2 O 3 and/or of LiX present within the pulverulent mixture PM2 is such that 5≤s≤30 mol %. 8. The process according to claim 1 , wherein x mp =0 or 0<x mp ≤10 mol %. 9. The process according to claim 1 , wherein the pulverulent mixture PM2 produced during stages 1) and 2) and comprising the solute composed of a sesquioxide of formula (IIa) as a mixture or not with a sesquioxide of formula (IIb) and the synthesis solvent of formula (IV) is prepared according to the process comprising the substages: i) preparing, by mechanical grinding, a pulverulent mixture comprising 6 mol of Li 2 CO 3 , 6 mol of H 3 BO 3 , 1+z mol of a sesquioxide of formula (IIa) or of a mixture of a sesquioxide of formula (IIa) and of a sesquioxide of formula (IIb), to which an excess of 20 mol % of at least one additive selected from the group consisting of Li 2 O (in the Li 2 CO 3 form), B 2 O 3 (in the H 3 BO 3 form) and LiX, with X=F, Cl, Br or I, is added; ii) subjecting the mixture obtained above in stage i) to a heat treatment comprising: a rise in temperature up to a temperature T1 of from 400 to 500° C., according to a temperature rise gradient of from 120 to 180° C.·h −1 , a stationary phase during which the temperature T1 is maintained for from 6 to 24 hours, a rise in temperature up to a temperature T2 of from 700 to 800° C., according to a temperature rise gradient of from 120 to 180° C.·h −1 , a stationary phase during which the temperature T2 is maintained for from 6 to 24 hours, a return to ambient temperature with a cooling gradient of from 120 to 180° C.·h −1 , in order to obtain a solid material in the form of particles, said material being composed of the synthesis solvent of formula (IV) as a mixture with z″ mol % of solute; and iii) mechanically grinding the solid material obtained above in stage ii) in order to obtain the pulverulent mixture PM2. 10. The process according to claim 1 , wherein, during stage 3), the temperature TPM2 is from 1200° C. to 1250° C. and

Assignees

Inventors

Classifications

  • Vertical dipping system · CPC title

  • C30B19/04Primary

    the solvent being a component of the crystal composition · CPC title

  • using molten solvents, e.g. flux · CPC title

  • Oxides · CPC title

  • based on magneto-optical elements, e.g. exhibiting Faraday effect · CPC title

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What does patent US9945049B2 cover?
The present invention relates to a process for the preparation of hulk or thin-film single-crystals of cubic sesquioxides (space group No. 206, Ia-3) of scandium, yttrium or rare earth metals doped or not doped with lanthanide ions having a valency of +III by a high-temperature flux growth technique and to the applications of the nondoped single-crystals obtained according to this process, in p…
Who is the assignee on this patent?
Centre Nat Rech Scient, Centre National De La Rech Scintifiqi
What technology area does this patent fall under?
Primary CPC classification C30B19/04. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Apr 17 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).