SiC single crystal and method for producing same

Patent metadata

Field	Value
Publication number	US-10094044-B2
Application number	US-201615366619-A
Country	US
Kind code	B2
Filing date	Dec 1, 2016
Priority date	Dec 15, 2015
Publication date	Oct 9, 2018
Grant date	Oct 9, 2018

Abstract

A SiC single crystal comprising no polycrystals, and no cracking other than at the side edges is provided. A method for producing SiC single crystal in which seed crystal held at bottom end face of holding shaft is contacted with Si—C solution having temperature gradient to grow SiC single crystal, wherein the contour of the end face of the holding shaft is smaller than the contour of the top face of the seed crystal, the top face of the seed crystal has center section held in contact with the entire surface of the end face of the holding shaft and outer peripheral section that is not in contact with the end face of the holding shaft, and carbon sheet is disposed on the top face of the seed crystal so as to cover at least the outer peripheral section, among the center section and the outer peripheral section.

First claim

What is claimed is:

1. A method for producing a SiC single crystal in which a seed crystal substrate held at a bottom end face of a seed crystal holding shaft is contacted with a Si—C solution situated in a crucible and having a temperature gradient such that a temperature decreases from an interior of the Si—C solution toward a liquid surface level of the Si—C solution, for crystal growth of a SiC single crystal,
wherein a top face of the seed crystal substrate has a center section held in contact with an entire surface of the bottom end face of the seed crystal holding shaft, and an outer peripheral section that is not in contact with the bottom end face of the seed crystal holding shaft, and
a carbon sheet is disposed on the top face of the seed crystal substrate so as to be in contact with and cover at least the outer peripheral section, among the center section and the outer peripheral section.

2. The method for producing a SiC single crystal according to claim 1 ,
wherein the carbon sheet has a contour that is equal to or larger than the contour of the top face of the seed crystal substrate,
the carbon sheet is disposed on the top face of the seed crystal substrate so as to cover the entire center section and outer peripheral section of the top face of the seed crystal substrate, and
the method comprises holding the center section of the seed crystal substrate on which the carbon sheet is disposed, at the bottom end face of the seed crystal holding shaft.

3. The method for producing a SiC single crystal according to claim 1 ,
wherein the carbon sheet has a contour that is equal to or larger than the contour of the growth surface of the SiC single crystal that is to be grown,
the carbon sheet is disposed on the top face of the seed crystal substrate so as to cover the entire center section and outer peripheral section of the top face of the seed crystal substrate and to cover the entire contour of the growth surface of the SiC single crystal that is to be grown, as viewed from the upward vertical direction, and
the method comprises holding the center section of the seed crystal substrate on which the carbon sheet is disposed, at the bottom end face of the seed crystal holding shaft.

4. The method for producing a SiC single crystal according to claim 1 , the method comprising:
holding the center section of the seed crystal substrate at the bottom end face of the seed crystal holding shaft, and
disposing the carbon sheet so as to cover at least a portion of the outer peripheral section of the top face of the seed crystal substrate held at the bottom end face.

5. The method for producing a SiC single crystal according to claim 1 ,
wherein the seed crystal substrate has a disc shape and a diameter of the seed crystal substrate is 30 mm or greater, and
the seed crystal holding shaft has a cylindrical shape and a diameter of the seed crystal holding shaft is 25 mm or smaller.

6. The method for producing a SiC single crystal according to claim 2 ,
wherein the seed crystal substrate has a disc shape and a diameter of the seed crystal substrate is 30 mm or greater, and
the seed crystal holding shaft has a cylindrical shape and a diameter of the seed crystal holding shaft is 25 mm or smaller.

7. The method for producing a SiC single crystal according to claim 3 ,
wherein the seed crystal substrate has a disc shape and a diameter of the seed crystal substrate is 30 mm or greater, and
the seed crystal holding shaft has a cylindrical shape and a diameter of the seed crystal holding shaft is 25 mm or smaller.

8. The method for producing a SiC single crystal according to claim 4 ,
wherein the seed crystal substrate has a disc shape and a diameter of the seed crystal substrate is 30 mm or greater, and
the seed crystal holding shaft has a cylindrical shape and a diameter of the seed crystal holding shaft is 25 mm or smaller.

Assignees

• Toyota Motor Co Ltd

Inventors

• Danno Katsunori

Classifications

• C30B29/64

  Flat crystals, e.g. plates, strips or discs · CPC title

• C30B19/04

  the solvent being a component of the crystal composition · CPC title

• C30B19/12

  characterised by the substrate · CPC title

• C30B19/068 Primary

  Substrate holders · CPC title

• C30B29/36

  Carbides · CPC title