METHOD OF MANUFACTURING SiC SINGLE CRYSTAL
US-2017067183-A1 · Mar 9, 2017 · US
Method for producing crystal of silicon carbide, and crystal production device
US10151046B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10151046-B2 |
| Application number | US-201515510038-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 10, 2015 |
| Priority date | Sep 11, 2014 |
| Publication date | Dec 11, 2018 |
| Grant date | Dec 11, 2018 |
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Abstract
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Provided is a method that allows growing a single crystal of silicon carbide on an off-substrate of silicon carbide while suppressing surface roughening. The method for producing a crystal of silicon carbide includes rotating a seed crystal of silicon carbide while bringing the seed crystal into contact with a starting material solution containing silicon and carbon. A crystal growth surface of the seed crystal has an off-angle, and the position of a rotation center of the seed crystal lies downstream of the central position of the seed crystal in a step flow direction that is a formation direction of the off-angle.
First claim
Opening claim text (preview).
The invention claimed is: 1. A method for producing a crystal of silicon carbide, the method comprising rotating a seed crystal of silicon carbide while bringing the seed crystal into contact with a starting material solution containing silicon and carbon, wherein a crystal growth surface of the seed crystal has an off-angle, the position of a rotation center of the seed crystal lies downstream of the central position of the seed crystal in a step flow direction that is a formation direction of the off-angle, and rotation of the seed crystal includes periodic repeating of forward rotation and reverse rotation. 2. The method for producing a crystal of silicon carbide according to claim 1 , wherein the rotation center of the seed crystal is present within the seed crystal. 3. The method for producing a crystal of silicon carbide according to claim 1 , wherein the rotation center of the seed crystal is present outside the seed crystal. 4. The method for producing a crystal of silicon carbide according to claim 1 , wherein rotation of the seed crystal is carried out within a plane parallel to a liquid surface of the starting material solution. 5. The method for producing a crystal of silicon carbide according to claim 1 , wherein the starting material solution contains chromium, and the proportion of chromium is 20 mol % to 60 mol % with respect to 100 mol % as the total of silicon and chromium. 6. A method for producing a crystal of silicon carbide, the method comprising bringing a seed crystal of silicon carbide into contact with a starting material solution containing silicon and carbon and held within a vessel, wherein a crystal growth surface of the seed crystal has an off-angle, the vessel rotates in such a manner that the position of a rotation center thereof lies downstream of the central position of the seed crystal in a step flow direction that is a formation direction of the off-angle, and rotation of the vessel includes periodic repeating of forward rotation and reverse rotation. 7. The method for producing a crystal of silicon carbide according to claim 6 , wherein the rotation center of the vessel is present within the seed crystal. 8. The method for producing a crystal of silicon carbide according to claim 6 , wherein the rotation center of the vessel is present outside the seed crystal. 9. The method for producing a crystal of silicon carbide according to claim 6 , wherein the starting material solution contains chromium, and the proportion of chromium is 20 mol % to 60 mol % with respect to 100 mol % as the total of silicon and chromium.
Assignees
Inventors
Classifications
Crystal orientations · CPC title
Silicon carbide · CPC title
using as solvent a component of the crystal composition · CPC title
characterised by the substrate · CPC title
- C30B19/062Primary
Vertical dipping system · CPC title
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Frequently asked questions
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- What does patent US10151046B2 cover?
- Provided is a method that allows growing a single crystal of silicon carbide on an off-substrate of silicon carbide while suppressing surface roughening. The method for producing a crystal of silicon carbide includes rotating a seed crystal of silicon carbide while bringing the seed crystal into contact with a starting material solution containing silicon and carbon. A crystal growth surface of…
- Who is the assignee on this patent?
- Univ Nagoya Nat Univ Corp, Central Glass Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification C30B19/062. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Dec 11 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).