Method for producing SiC substrate

Patent metadata

Field	Value
Publication number	US-9951441-B2
Application number	US-201414906767-A
Country	US
Kind code	B2
Filing date	Jul 17, 2014
Priority date	Jul 24, 2013
Publication date	Apr 24, 2018
Grant date	Apr 24, 2018

Abstract

A method for producing a SiC substrate with an epitaxial layer, which can prevent inventory of wafers from unduly increasing and wasteful production, is provided. This is achieved by a method for producing a SiC substrate with an epitaxial layer one at a time, the method comprising growing an epitaxial layer and growing a SiC substrate on a seed crystal substrate, and the method further comprising removing the obtained SiC substrate with the epitaxial layer from the seed crystal substrate.

First claim

What is claimed is:

1. A method for producing an SiC substrate with an epitaxial layer one at a time,
the method comprising growing a SiC epitaxial layer on a seed crystal substrate by a solution process using a Si molten liquid and growing a SiC substrate on the grown SiC epitaxial layer by a solution process, and
the method further comprising removing the obtained SiC substrate with the SiC epitaxial layer from the seed crystal substrate,
wherein the nitrogen density of the SiC epitaxial layer is 10 17 /cm 3 or less, and
the nitrogen density of the SiC substrate is 10 18 /cm 3 or greater.

2. The method according to claim 1 , wherein the growing the SiC substrate by the solution process comprises using a Si/X molten liquid, wherein X is selected from Ti, Mn, Cr, Ni, Ce, Co, V and Fe.

3. The method according to claim 1 , wherein the seed crystal substrate has been CMP-polished.

4. The method according to claim 1 , wherein the growing the SiC epitaxial layer comprises conducting onset-growth.

5. The method according to claim 1 , wherein the growing the SiC epitaxial layer comprises conducting (000-1) C-surface growth or (0001) Si-surface growth.

6. The method according to claim 1 , wherein the growing the SiC substrate comprises conducting (000-1) C-surface growth or (0001) Si-surface growth.

7. The method according to claim 1 , wherein the growing the SiC epitaxial layer comprises growing the SiC epitaxial layer to a thickness of 5 to 200 μm, and the growing the SiC substrate comprises growing the SiC substrate to a thickness of 150 to 500 μm.

Assignees

• Toyota Motor Co Ltd

Inventors

• Danno Katsunori

Classifications

• C30B23/02

  Epitaxial-layer growth · CPC title

• C30B25/02

  Epitaxial-layer growth · CPC title

• C30B17/00

  Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method (C30B15/00 takes precedence) · CPC title

• C30B19/04 Primary

  the solvent being a component of the crystal composition · CPC title

• C30B29/36

  Carbides · CPC title