Method for producing SiC single crystal

Patent metadata

Field	Value
Publication number	US-9982365-B2
Application number	US-201414541740-A
Country	US
Kind code	B2
Filing date	Nov 14, 2014
Priority date	Nov 21, 2013
Publication date	May 29, 2018
Grant date	May 29, 2018

Abstract

Provided is a method for producing a SiC single crystal wherein generation of polycrystals can be inhibited even if the temperature of the Si—C solution is changed after seed touching. This is achieved by a method for producing a SiC single crystal wherein a SiC seed crystal substrate held on a seed crystal holding shaft is contacted with a Si—C solution having a temperature gradient in which the temperature decreases from the interior toward the surface, to grow a SiC single crystal, comprising the steps of: (A) bringing the temperature of the solution to a first temperature, (B) contacting the substrate held on the holding shaft with the solution, (C) bringing the temperature of the solution to a second temperature after the contacting the substrate with the solution, and (D) moving the substrate held on the holding shaft in the vertical direction according to the change in liquid surface height of the solution when the temperature of the solution is brought from the first temperature to the second temperature.

First claim

What is claimed is:

1. A method for producing a SiC single crystal wherein a SiC seed crystal substrate held on a seed crystal holding shaft is contacted with a Si—C solution having a temperature gradient in which the temperature decreases from the interior toward the surface, to grow a SiC single crystal, the method for producing a SiC single crystal comprising the steps of:
before step (A), measuring the liquid surface height of the Si—C solution as the temperature of the Si—C solution is changed from a first temperature to a second temperature,
(A) bringing the temperature of the Si—C solution to the first temperature,
(B) contacting the seed crystal substrate held on the seed crystal holding shaft with the Si—C solution,
(C) bringing the temperature of the Si—C solution to the second temperature after the contacting the seed crystal substrate with the Si—C solution, and
(D) moving the seed crystal substrate held on the seed crystal holding shaft in the vertical direction according to the change in liquid surface height of the Si—C solution that has been determined before step (A) when the temperature of the Si—C solution is brought from the first temperature to the second temperature, wherein
the first temperature is lower than the second temperature, and
the temperature difference between the first temperature and the second temperature is at least 100° C.

2. The method according to claim 1 , wherein step (C) includes performing meltback of the seed crystal substrate.

3. The method according to claim 1 , wherein the SiC single crystal is grown at the second temperature.

4. The method according to claim 2 , wherein the SiC single crystal is grown at the second temperature.

5. The method according to claim 3 , wherein the method comprises growing the SiC single crystal while forming a meniscus.

6. The method according to claim 4 , wherein the method comprises growing the SiC single crystal while forming a meniscus.

7. The method according to claim 2 , wherein the temperature is raised from the first temperature to the second temperature at a temperature-elevating rate of from 1° C./min to 20° C./min.

8. The method according to claim 2 , wherein the temperature is raised from the first temperature to the second temperature at a temperature-elevating rate of from 3° C./min to 15° C./min.

Assignees

• Toyota Motor Co Ltd
• Nippon Steel & Sumitomo Metal Corp

Inventors

• Danno Katsunori
• Kusunoki Kazuhiko
• Kamei Kazuhito

Classifications

• C30B9/06

  using as solvent a component of the crystal composition · CPC title

• C30B19/04

  the solvent being a component of the crystal composition · CPC title

• C30B29/36 Primary

  Carbides · CPC title

• C30B11/003

  Heating or cooling of the melt or the crystallised material · CPC title

• C30B17/00

  Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method (C30B15/00 takes precedence) · CPC title