Method for growing silicon carbide crystal

Patent metadata

Field	Value
Publication number	US-9951439-B2
Application number	US-201414559362-A
Country	US
Kind code	B2
Filing date	Dec 3, 2014
Priority date	Dec 6, 2013
Publication date	Apr 24, 2018
Grant date	Apr 24, 2018

Abstract

In the present invention, a crucible formed of SiC as a main component is used as a container for a Si—C solution. A metal element M (M is at least one metal element selected from at least one of a first group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho and Lu, a second group consisting of Ti, V, Cr, Mn, Fe, Co, Ni and Cu and a third group consisting of Al, Ga, Ge, Sn, Pb and Zn) is added to the Si—C solution and the crucible is heated to elute Si and C, which are derived from a main component SiC of the crucible, from a high-temperature surface region of the crucible in contact with the Si—C solution, into the Si—C solution. In this way, precipitation of a SiC polycrystal on a surface of the crucible in contact with the Si—C solution is suppressed.

First claim

What is claimed is:

1. A method for growing a crystal of silicon carbide by a solution method using a crucible formed of SiC as a main component, as a container for a Si—C solution, comprising
adding, to the Si—C solution, a metal element M (M is at least one metal element selected from at least one of a first group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho and Lu, a second group consisting of Ti, V, Cr, Mn, Fe, Co, Ni and Cu and a third group consisting of Al, Ga, Ge, Sn, Pb and Zn);
heating the crucible to elute Si and C, which are derived from a main component SiC of the crucible, from a high-temperature surface region of the crucible in contact with the Si—C solution, into the Si—C solution, thereby suppressing precipitation of a SiC polycrystal on a surface of the crucible in contact with the Si—C solution; and
moving down a SiC seed crystal closer to the Si—C solution from an upper portion of the crucible and bringing the seed crystal into contact with the Si—C solution to grow a SiC single crystal on the SiC seed crystal, and wherein
the heating is carried out to form a temperature distribution where the temperature of the Si—C solution in the crucible increases from the top to the bottom, and at the bottom portion of the crucible has the highest temperature.

2. The method for growing a silicon carbide crystal according to claim 1 , wherein a total content of the metal element M in the Si—C solution is 1 at % to 80 at %.

3. The method for growing a silicon carbide crystal according to claim 1 , wherein the heating is carried out in a state where the crucible formed of SiC as a main component is contained in a second crucible formed of a heat-resistant carbon material.

4. The method for growing a silicon carbide crystal according to claim 1 , wherein the metal element M is at least one metal element selected from the first group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho and Lu.

5. The method for growing a silicon carbide crystal according to claim 4 , wherein a total content of the metal element M in the Si—C solution is 1 at % to 80 at %.

6. The method for growing a silicon carbide crystal according to claim 4 , wherein the heating is carried out in a state where the crucible formed of SiC as a main component is contained in a second crucible formed of a heat-resistant carbon material.

7. The method for growing a silicon carbide crystal according to claim 1 , wherein the metal element M is at least one metal element selected from the second group consisting of Ti, V, Cr, Mn, Fe, Co, Ni and Cu.

8. The method for growing a silicon carbide crystal according to claim 7 , wherein a total content of the metal element M in the Si—C solution is 1 at % to 80 at %.

9. The method for growing a silicon carbide crystal according to claim 7 , wherein the heating is carried out in a state where the crucible formed of SiC as a main component is contained in a second crucible formed of a heat-resistant carbon material.

10. The method for growing a silicon carbide crystal according to claim 1 , wherein the metal element M is at least one metal element selected from the third group consisting of Al, Ga, Ge, Sn, Pb and Zn.

11. The method for growing a silicon carbide crystal according to claim 10 , wherein a total content of the metal element M in the Si—C solution is 1 at % to 80 at %.

12. The method for growing a silicon carbide crystal according to claim 10 , wherein the heating is carried out in a state where the crucible formed of SiC as a main component is contained in a second crucible formed of a heat-resistant carbon material.

13. The method for growing a silicon carbide crystal according to claim 1 , wherein the metal element M is constituted of at least one metal element M1 selected from the first group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho and Lu and at least one metal element M2 selected from the second group consisting of Ti, V, Cr, Mn, Fe, Co, Ni and Cu.

14. The method for growing a silicon carbide crystal according to claim 13 , wherein a total content of the metal element M in the Si—C solution is 1 at % to 80 at %.

15. The method for growing a silicon carbide crystal according to claim 13 , wherein the heating is carried out in a state where the crucible formed of SiC as a main component is contained in a second crucible formed of a heat-resistant carbon material.

Assignees

• Shinetsu Chemical Co

Inventors

• Shinya Naofumi
• Hamaguchi Yu
• Yamagata Norio
• Minowa Takehisa

Classifications

• C30B11/08

  every component of the crystal composition being added during the crystallisation · CPC title

• C30B15/206

  the thermal history of growing the ingot · CPC title

• C30B13/02 Primary

  Zone-melting with a solvent, e.g. travelling solvent process · CPC title

• C30B17/00 Primary

  Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method (C30B15/00 takes precedence) · CPC title

• C30B19/04

  the solvent being a component of the crystal composition · CPC title