Metal-doped graphene and growth method of the same
US-2017263940-A1 · Sep 14, 2017 · US
Deposition of only one other metal element
Deposition of only one other metal element · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C23C16/14 |
| Official title | Deposition of only one other metal element |
| Display label | Deposition of only one other metal element |
| Total patents | 634 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is growing.
| Year | Patents |
|---|---|
| 2015 | 21 |
| 2016 | 33 |
| 2017 | 41 |
| 2018 | 41 |
| 2019 | 48 |
| 2020 | 60 |
| 2021 | 59 |
| 2022 | 63 |
| 2023 | 73 |
| 2024 | 92 |
| 2025 | 76 |
| 2026 | 27 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Method of manufacturing semiconductor device, substrate processing apparatus, and non-transitory computer-readable recording medium
US-9558937-B2 · Jan 31, 2017 · US
Printed circuit board and corresponding method for producing a printed circuit board
US-2017027066-A1 · Jan 26, 2017 · US
Printed circuit board and corresponding method for producing a printed circuit board
US-2017013715-A1 · Jan 12, 2017 · US
Microwave plasma and ultraviolet assisted deposition apparatus and method for material deposition using the same
US-2017002469-A1 · Jan 5, 2017 · US
Tungsten film forming method, semiconductor device manufacturing method, and storage medium
US-9536782-B2 · Jan 3, 2017 · US
Tungsten film forming method
US-2016379879-A1 · Dec 29, 2016 · US
Tungsten films having low fluorine content
US-2016351444-A1 · Dec 1, 2016 · US
Deposition of low fluorine tungsten by sequential cvd process
US-2016351401-A1 · Dec 1, 2016 · US
Method of Forming Metal Film
US-2016348234-A1 · Dec 1, 2016 · US
Method of reducing stress in metal film and metal film forming method
US-2016351402-A1 · Dec 1, 2016 · US
Selective formation of metallic films on metallic surfaces
US-9502289-B2 · Nov 22, 2016 · US
Method and apparatus to deposit pure titanium thin film at low temperature using titanium tetraiodide precursor
US-9478438-B2 · Oct 25, 2016 · US
Novel Methods of Preparing Nanodevices
US-2016304341-A1 · Oct 20, 2016 · US
Method for forming cobalt barrier layer and metal interconnection process
US-2016300758-A1 · Oct 13, 2016 · US
Method of forming tungsten film
US-2016284553-A1 · Sep 29, 2016 · US
Source supply apparatus, source supply method and storage medium
US-2016281231-A1 · Sep 29, 2016 · US
Tpir apparatus for monitoring tungsten hexafluoride processing to detect gas phase nucleation, and method and system utilizing same
US-2016281238-A1 · Sep 29, 2016 · US
Raw material gas supply apparatus and film forming apparatus
US-2016273101-A1 · Sep 22, 2016 · US
Selective formation of metallic films on metallic surfaces
US-2016276208-A1 · Sep 22, 2016 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC C23C16/14?
- CPC C23C16/14 is the Cooperative Patent Classification code for “Deposition of only one other metal element.”
- How many patents are filed under CPC C23C16/14 (Deposition of only one other metal element)?
- Our database includes 634 publications tagged with this CPC code.
- Is patent activity under CPC C23C16/14 growing?
- Publication counts under this code: 92 in 2024 vs 76 in 2025 (latest complete years).