Tungsten film forming method

Patent metadata

Field	Value
Publication number	US-2016379879-A1
Application number	US-201415039803-A
Country	US
Kind code	A1
Filing date	Nov 21, 2014
Priority date	Nov 27, 2013
Publication date	Dec 29, 2016
Grant date	—

Abstract

In a method for forming a tungsten film, a substrate to be processed is disposed in a processing chamber having a reduced pressure atmosphere. Then a reducing gas and a tungsten chloride gas as a tungsten source are supplied to the processing chamber simultaneously or alternately with a process of purging an inside of the processing chamber interposed therebetween. The substrate is heated and the tungsten chloride gas and the reducing gas react with each other on the heated substrate to form a tungsten film.

First claim

What is claimed is:

1 . A tungsten film forming method comprising:
disposing a substrate to be processed in a processing chamber having a reduced pressure atmosphere; supplying a tungsten chloride gas as a tungsten source and a reducing gas into the processing chamber simultaneously or alternately with a process of purging an inside of the processing chamber interposed therebetween; heating the substrate; and forming a tungsten film by causing the tungsten chloride gas and the reducing gas to react with each other on the heated substrate.

2 . The tungsten film forming method of claim 1 , wherein conditions of a temperature of the substrate and a pressure in the processing chamber are set such that an underlying layer of the tungsten film to be formed is not etched by the tungsten chloride.

3 . The tungsten film forming method of claim 1 , wherein the tungsten chloride is WCl 6 .

4 . The tungsten film forming method of claim 1 , wherein the substrate has a TiN film or a TiSiN film as the underlying layer of the tungsten film.

5 . The tungsten film forming method of claim 1 , wherein the temperature of the substrate is 400° C. or above, and the pressure in the processing chamber is 5 Torr or above.

6 . The tungsten film forming method of claim 1 , wherein the temperature of the substrate is 400° C. or above and the pressure in the processing chamber is 10 Torr or above.

7 . The tungsten film forming method of claim 1 , wherein the temperature of the substrate is 500° C. or above and the pressure in the processing chamber is 5 Torr or above.

8 . The tungsten film forming method of claim 1 , wherein the reducing gas is at least one of H 2 gas, SiH 4 gas, B 2 H 6 gas, and NH 3 gas.

9 . The tungsten film forming method of claim 1 , wherein initial film formation is performed by using SiH 4 gas or B 2 H 6 gas as the reducing gas and then main film formation is performed by using H 2 gas as the reducing gas.

10 . A storage medium storing a computer-executable program for controlling a film forming apparatus, wherein the program, when executed on a computer, controls the film forming apparatus to perform a tungsten film forming method comprising: disposing a substrate to be processed in a processing chamber having a reduced pressure atmosphere; supplying a tungsten chloride gas as a tungsten source and a reducing gas into the processing chamber simultaneously or alternately with a process of purging an inside of the processing chamber interposed therebetween; heating the substrate; and forming a tungsten film by causing the tungsten chloride gas and the reducing gas to react with each other on the heated substrate.

Assignees

• Tokyo Electron Ltd

Inventors

• Hotta Takanobu
• Aiba Yasushi

Classifications

• H10P14/432

  using selective deposition · CPC title

• H10P14/418

  the conductive layers comprising transition metals · CPC title

• H10P14/43 Primary

  Chemical deposition, e.g. chemical vapour deposition [CVD] · CPC title

• H10W20/056

  by filling conductive material into holes, grooves or trenches · CPC title

• H10W20/057 Primary

  by selectively depositing, e.g. by using selective CVD or plating · CPC title