Method of manufacturing semiconductor device, substrate processing apparatus, and non-transitory computer-readable recording medium

Patent metadata

Field	Value
Publication number	US-9558937-B2
Application number	US-201514886768-A
Country	US
Kind code	B2
Filing date	Oct 19, 2015
Priority date	Sep 30, 2013
Publication date	Jan 31, 2017
Grant date	Jan 31, 2017

Abstract

A method of manufacturing a semiconductor device includes: (a) forming a first film containing a metal element on a substrate by performing a cycle a predetermined number of times, the cycle including: (a-1) supplying a first precursor gas being a fluorine-free inorganic gas containing the metal element to the substrate; and (a-2) supplying a first reactant gas having reducibility to the substrate; (b) forming a second film containing the metal element on the first film by performing a cycle a predetermined number of times, the cycle including: (b-1) supplying a second precursor gas containing the metal element and fluorine to the substrate; and (b-2) supplying a second reactant gas having reducibility to the substrate; and (c) forming a film containing the metal element and obtained by the first film and the second film being laminated on the substrate by performing the (a) and (b).

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device, comprising:
forming a film composed of a first film containing a metal element and a second film containing the metal element on a substrate, the first film and the second film being laminated, by performing:
(a) forming the first film on the substrate by performing a first cycle a first predetermined number of times, the first cycle including:
(a-1) supplying a first precursor gas being a fluorine-free inorganic gas containing the metal element to the substrate; and
(a-2) supplying a first reactant gas to the substrate; and

(b) forming the second film on the first film by performing a second cycle a second predetermined number of times, the second cycle including:
(b-1) supplying a second precursor gas containing the metal element and fluorine to the substrate; and
(b-2) supplying a second reactant gas to the substrate,

wherein at least one of the first reactant gas or the second reactant gas includes a gas containing the metal element and an amino group or an inorganic hydrogen-containing gas.

2. The method according to claim 1 , wherein one of the first reactant gas and the second reactant gas includes the gas containing the metal element and the amino group, and the other includes the inorganic hydrogen-containing gas.

3. The method according to claim 1 , wherein each of the first reactant gas and the second reactant gas includes the gas containing the metal element and the amino group.

4. The method according to claim 1 , wherein each of the first reactant gas and the second reactant gas includes the inorganic hydrogen-containing gas.

5. The method according to claim 1 , wherein
the first precursor gas includes at least one selected from a group consisting of a chlorotungsten-based gas, a chlorotitanium-based gas, a chloromolybdenum-based gas, a chlorotantalum-based gas, a chlororuthenium-based gas, a chlorohafnium-based gas, and a chloroaluminum-based gas, the second reactant gas includes at least one selected from a group consisting of a fluorotungsten-based gas, a fluorotitanium-based gas, a fluoromolybdenum-based gas, a fluorotantalum-based gas, a fluororuthenium-based gas, a fluorohafnium-based gas, and a fluoroaluminum-based gas, and
at least one of the first reactant gas or the second reactant gas includes an amino tungsten-based gas, an amino titanium-based gas, an amino molybdenum-based gas, an amino tantalum-based gas, an amino ruthenium-based gas, an amino hafnium-based gas, and, an organic aluminum-based gas.

6. The method according to claim 1 , wherein the first precursor gas includes a chlorotungsten-based gas, the second reactant gas includes a fluorotungsten-based gas, and at least one of the first reactant gas or the second reactant gas includes an amino tungsten-based gas or an inorganic hydrogen-containing gas.

7. The method according to claim 1 , wherein a thickness of the first film is one atomic layer or more and 15 nm or less.

8. The method according to claim 1 , wherein a thickness of the first film is 5 nm or more and 15 nm or less.

9. The method according to claim 1 , wherein the first cycle is repeated twice or more and the second cycle is repeated twice or more.

10. The method according to claim 1 , wherein the (a-1) and the (a-2) are alternately repeated once or more in the (a), the (b-1) and the (b-2) are alternately repeated once or more in the (b).

11. The method according to claim 1 , wherein one of the first precursor gas and the first reactant gas is continuously supplied, and the other is intermittently supplied in the (a), and one of the second precursor gas and the second reactant gas is continuously supplied, and the other is intermittently supplied in the (b).

12. The method according to claim 1 , wherein the first precursor gas contains the metal element and chlorine.

13. The method according to claim 1 , wherein the first precursor gas contains the metal element and is fluorine-free, carbon-free, and oxygen-free.

14. The method according to claim 1 , wherein the first precursor gas contains the metal element and is fluorine-free, carbon-free, nitrogen-free, hydrogen-free, and oxygen-free.

15. The method according to claim 1 , wherein the (a) and the (b) are performed in a same process chamber in a state in which a temperature of the substrate is set to a same temperature.

16. The method according to claim 1 , wherein the first film is formed on at least one selected from the group consisting of a silicon-containing film, a metal oxide film, and a metal nitride film.

17. The method according to claim 1 , further comprising performing heat treatment to the first film and the second film that are formed on the substrate.

18. The method according to claim 1 , wherein the film containing the metal element includes a film essentially consisting of the metal element.

19. A substrate processing apparatus comprising:
a process chamber configured to accommodate a substrate;
a first precursor gas supply system configured to supply a first precursor gas being a fluorine-free inorganic gas containing a metal element into the process chamber;
a second precursor gas supply system configured to supply a second precursor gas containing the metal element and fluorine into the process chamber;
a first reactant gas supply system configured to supply a first reactant gas into the process chamber;
a second reactant gas supply system configured to supply a second reactant gas into the process chamber; and
a controller configured to control the first precursor gas supply system, the second precursor gas supply system, the first reactant gas supply system, and the second reactant gas supply system so as to form a film composed of a first film containing the metal element and a second film containing the metal element on a substrate, the first film and the second film being laminated, by performing:
(a) forming the first film on the substrate by performing a first cycle a first predetermined number of times, the first cycle including:
(a-1) supplying the first precursor gas to the substrate in the process chamber; and
(a-2) supplying the first reactant gas to the substrate in the process chamber; and

(b) forming the second film on the first film by performing a second cycle a second predetermined number of times, the second cycle including:
(b-1) supplying the second precursor gas to the substrate in the process chamber; and
(b-2) supplying the second reactant gas to the substrate in the process chamber,

wherein at least one of the first reactant gas or the second reactant gas includes a gas containing the metal element and an amino group or an inorganic hydrogen-containing gas.

20. A non-transitory computer-readable recording medium storing a program that causes a computer to perform forming a film composed of a first film containing a metal element and a second film containing the metal element on a substrate, the first film and the second film being laminated, by performing:
(a) forming the first film on a substrate by performing a first cycle a first predetermined number of times, the first cycle including:
(a-1) supplying a first precursor gas being a fluorine-free inorganic gas containing the metal element to the substrate; and
(a-2) supplying a first reactant gas to the substrate; and
(b) forming the second film on the first film by performing a second cycle a second predetermined number of times, the second cycle including:
(b-1) supplying a second precursor gas containing the

Assignees

• Hitachi Int Electric Inc

Inventors

• Nakatani Kimihiko
• Harada Kazuhiro
• Ashihara Hiroshi
• Yamamoto Ryuji

Classifications

• H10P14/6938

  the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides · CPC title

• H10P14/6903

  containing silicon · CPC title

• H10P14/6516

  of treatments performed after formation of the materials · CPC title

• H10P14/668

  the materials being characterised by the deposition precursor materials · CPC title

• H10P14/432

  using selective deposition · CPC title