Raw material gas supply apparatus and film forming apparatus

Patent metadata

Field	Value
Publication number	US-2016273101-A1
Application number	US-201615073513-A
Country	US
Kind code	A1
Filing date	Mar 17, 2016
Priority date	Mar 17, 2015
Publication date	Sep 22, 2016
Grant date	—

Abstract

A raw material gas supply apparatus includes a raw material container, a carrier gas inlet line and a raw material gas line. The raw material container is configured to accommodate the solid raw material. The carrier gas inlet line is configured to discharge the carrier gas to the raw material gas originated from the solid raw material. The raw material gas is transferred to the consumption area together with the carrier gas through the raw material gas line. A flow rate of the carrier gas is set such that a variation rate of a gas flow rate of the raw material gas flowing in the raw material gas line obtained by subtracting a gas flow rate in the carrier gas inlet line from a gas flow rate in the raw material gas line becomes 10% or less.

First claim

What is claimed is:

1 . A raw material gas supply apparatus for supplying a raw material gas originated from a solid raw material to a consumption area together with an inert gas as a carrier gas, comprising:
a raw material container configured to accommodate the solid raw material; a carrier gas inlet line configured to discharge the carrier gas to the raw material gas originated from the solid raw material; and a raw material gas line through which the raw material gas is transferred to the consumption area together with the carrier gas, wherein a flow rate of the carrier gas is set such that a variation rate of a gas flow rate of the raw material gas, which flows through the raw material gas line, obtained by subtracting a gas flow rate in the carrier gas inlet line from a gas flow rate in the raw material gas line becomes 10% or less, wherein the variation rate is defined as [{(V 0 −V 1 )/V 0 }×100%], where V 0 indicates a gas flow rate measured at the time when the solid raw material in the raw material container is started to sublimate and V 1 indicates a gas flow rate measured at the time when a weight of the solid raw material is reduced to a half of an initial weight.

2 . The raw material gas supply apparatus of claim 1 , wherein an outlet port of the carrier gas inlet line opens downward in the raw material container, and a partitioning unit is provided between the outlet port and the solid raw material to partition an gas flow discharged from the outlet port and an area near a surface of the solid raw material.

3 . The raw material gas supply apparatus of claim 2 , further comprising a buffer chamber,
wherein the raw material container is connected to the buffer chamber via a raw material outlet line through which the raw material gas is discharged to the buffer chamber, the carrier gas inlet line and the raw material gas line are connected to the buffer chamber, and the partitioning unit is defined by a portion between an inside of the buffer chamber and a space in the raw material container.

4 . The raw material gas supply apparatus of claim 1 ,
wherein the carrier gas inlet line is inserted downward through a top surface of the raw material container, and a leading end portion of the carrier gas inlet line is bent in an L shape such that an outlet port is directed laterally.

5 . The raw material gas supply apparatus of claim 2 ,
wherein the carrier gas inlet line is inserted downward through a top surface of the raw material container, and a leading end portion of the carrier gas inlet line is bent in an L shape such that an outlet port is directed laterally

6 . The raw material gas supply apparatus of claim 3 ,
wherein the carrier gas inlet line is inserted downward through a top surface of the raw material container, and a leading end portion of the carrier gas inlet line is bent in an L shape such that an outlet port is directed laterally

7 . A film forming apparatus for performing a film forming process by supplying a raw material gas to a substrate, comprising:
the raw material gas supply apparatus described in claim 1 ; a processing chamber connected to the raw material gas line, the processing chamber having therein a mounting table configured to mount thereon the substrate; and a gas exhaust unit configured to evacuate the processing chamber.

8 . A film forming apparatus for performing a film forming process by supplying a raw material gas to a substrate, comprising:
the raw material gas supply apparatus described in claim 2 ; a processing chamber connected to the raw material gas line, the processing chamber having therein a mounting table configured to mount thereon the substrate; and a gas exhaust unit configured to evacuate the processing chamber.

9 . A film forming apparatus for performing a film forming process by supplying a raw material gas to a substrate, comprising:
the raw material gas supply apparatus described in claim 3 ; a processing chamber connected to the raw material gas line, the processing chamber having therein a mounting table configured to mount thereon the substrate; and a gas exhaust unit configured to evacuate the processing chamber.

10 . A film forming apparatus for performing a film forming process by supplying a raw material gas to a substrate, comprising:
the raw material gas supply apparatus described in claim 4 ; a processing chamber connected to the raw material gas line, the processing chamber having therein a mounting table configured to mount thereon the substrate; and a gas exhaust unit configured to evacuate the processing chamber.

Assignees

• Tokyo Electron Ltd

Inventors

• Komori Eiichi
• Yagi Hironori

Classifications

• C23C16/4481

  by evaporation using carrier gas in contact with the source material (C23C16/4486 takes precedence) · CPC title

• C23C16/52 Primary

  Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)} · CPC title

• C23C16/45561

  Gas plumbing upstream of the reaction chamber · CPC title

• C23C16/14

  Deposition of only one other metal element · CPC title

• C23C16/4485 Primary

  by evaporation without using carrier gas in contact with the source material (C23C16/4486 takes precedence) · CPC title