Method of Forming Metal Film

Patent metadata

Field	Value
Publication number	US-2016348234-A1
Application number	US-201615161674-A
Country	US
Kind code	A1
Filing date	May 23, 2016
Priority date	May 28, 2015
Publication date	Dec 1, 2016
Grant date	—

Abstract

There is provided a method for forming a metal film on a target substrate having a complex-shaped portion and a flat portion, the target substrate being loaded into a chamber which is maintained under a depressurized atmosphere, by sequentially supplying a metal chloride gas as a raw material gas and a reduction gas for reducing a metal chloride into the chamber while purging the chamber in the course of sequentially supplying the metal chloride gas and the reduction gas, the method including: forming a first metal film by supplying the metal chloride gas at a relatively low flow rate; and forming a second metal film by supply the metal chloride gas at a relatively high flow rate.

First claim

What is claimed is:

1 . A method for forming a metal film on a target substrate having a complex-shaped portion and a flat portion, the target substrate being loaded into a chamber which is maintained under a depressurized atmosphere, by sequentially supplying a metal chloride gas as a raw material gas and a reduction gas for reducing a metal chloride into the chamber while purging the chamber in the course of sequentially supplying the metal chloride gas and the reduction gas, the method comprising:
forming a first metal film by supplying the metal chloride gas at a relatively low flow rate; and forming a second metal film by supply the metal chloride gas at a relatively high flow rate.

2 . The method of claim 1 , wherein the forming a first metal film and the forming a second metal film are alternately performed.

3 . The method of claim 1 , wherein the target substrate has a base film formed thereon, and the first metal film is formed on the base film.

4 . The method of claim 1 , wherein the target substrate has a base film formed thereon, and an initial metal film is formed between the metal film and the base film by sequentially supplying the metal chloride gas and the reduction gas into the chamber while supplying a purge gas in the course of sequentially supplying the metal chloride gas and the reduction gas, or by simultaneously supplying the metal chloride gas and the reduction gas into the chamber, wherein a flow rate of the metal chloride gas is lower than that used in forming the second metal film.

5 . The method of claim 1 , wherein a final stage in the formation of the metal film is the forming a first metal film.

6 . The method of claim 1 , wherein a top coating metal film is formed on the metal film by sequentially supplying the metal chloride gas and the reduction gas into the chamber while supplying a purge gas in the course of sequentially supplying the metal chloride gas and the reduction gas, or by simultaneously supplying the metal chloride gas and the reduction gas into the chamber, wherein a flow rate of the metal chloride gas is lower than that used in forming the second metal film.

7 . The method of claim 1 , wherein a tungsten chloride is used as the metal chloride to form a tungsten film as the metal film.

8 . The method of claim 7 , wherein gas of the tungsten chloride is supplied such that a partial pressure of the tungsten chloride gas inside the chamber in the forming the first metal film is 1 Torr or less.

9 . The method of claim 7 , wherein gas of the tungsten chloride is supplied such that a partial pressure of the tungsten chloride gas inside the chamber in the forming the second metal film falls within a range from 0.5 to 10 Torr.

10 . The method of claim 7 , wherein, in the forming the first metal film and the second metal film, a temperature of the target substrate is 300 degrees C. or more, and an internal pressure of the chamber is 5 Torr or more.

11 . The method of claim 7 , wherein the tungsten chloride includes one of WCl 6 , WCl 5 , and WCl 4 .

12 . The method of claim 1 , wherein the reduction gas is at least one of an H 2 gas, an SiH 4 gas, a B 2 H 6 gas and an NH 3 gas.

13 . A non-transitory computer-readable storage medium storing a program that operates on a computer and controls a film forming apparatus,
wherein the program, when executed, causes the computer to control the film forming apparatus so as to perform the method of claim 1 .

Assignees

• Tokyo Electron Ltd

Inventors

• Suzuki Kenji
• Hotta Takanobu
• Maekawa Koji
• Aiba Yasushi

Classifications

• H10P14/432

  using selective deposition · CPC title

• H10W20/056

  by filling conductive material into holes, grooves or trenches · CPC title

• C23C16/06 Primary

  characterised by the deposition of metallic material · CPC title

• C23C16/455

  characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber · CPC title

• C23C16/45523 Primary

  Pulsed gas flow or change of composition over time · CPC title