Method of forming tungsten film

Patent metadata

Field	Value
Publication number	US-2016284553-A1
Application number	US-201615080281-A
Country	US
Kind code	A1
Filing date	Mar 24, 2016
Priority date	Mar 27, 2015
Publication date	Sep 29, 2016
Grant date	—

Abstract

In a method of forming a tungsten film, an initial tungsten film and a main tungsten film are formed on an underlying film of a substrate. The initial tungsten film is formed on the underlying film by sequentially supplying a tungsten chloride gas and a reduction gas into a chamber while supplying a purging gas between the supplys of the tungsten chloride gas and the reduction gas, or by simultaneously supplying the tungsten chloride gas and the reduction gas. The main tungsten film is formed on the initial tungsten film by sequentially supplying the tungsten chloride gas and the reduction gas into the chamber while purging an inside of the chamber between the supplys of the tungsten chloride gas and the reduction gas. A supply amount of the tungsten chloride gas in forming the initial film is smaller than that in forming the main tungsten film.

First claim

What is claimed is:

1 . A method of forming a tungsten film on a substrate having thereon an underlying film by using a tungsten chloride gas as a tungsten source gas and a reduction gas for reducing the tungsten chloride gas, the substrate being accommodated in a chamber maintained under a depressurized atmosphere, the method comprising:
forming an initial tungsten film on the underlying film, by sequentially supplying the tungsten chloride gas and the reduction gas into the chamber while supplying a purging gas into the chamber between the supply of the tungsten chloride gas and the supply of the reduction gas, or by simultaneously supplying the tungsten chloride gas and the reduction gas into the chamber, and forming a main tungsten film on the initial tungsten film by sequentially supplying the tungsten chloride gas and the reduction gas into the chamber while purging an inside of the chamber between the supply of the tungsten chloride gas and the supply of the reduction gas, wherein a supply amount of the tungsten chloride gas supplied in the forming the initial film is smaller than a supply amount of the tungsten chloride gas supplied in the forming the main tungsten film.

2 . The method of claim 1 , wherein in the forming the initial tungsten film, the tungsten chloride gas is supplied such that a partial pressure of the tungsten chloride gas in the chamber becomes 1 Torr or less.

3 . The method of claim 2 , wherein the partial pressure of the tungsten chloride gas is 0.1 Torr or less.

4 . The method of claim 1 , wherein in the forming the initial tungsten film, the supply amount of the tungsten chloride gas is ramped up to a set value.

5 . The method of claim 1 , wherein a thickness of the initial tungsten film is 1 nm or above.

6 . The method of claim 5 , wherein the thickness of the initial tungsten film is changed depending on the supply amount of the tungsten chloride gas supplied in the forming the main tungsten film.

7 . The method of claim 1 , wherein the initial tungsten film includes two or more layers which are formed by varying the supply amount of the tungsten chloride gas.

8 . The method of claim 1 , wherein in the forming the initial tungsten film and in the forming the main tungsten film, a temperature of the substrate is 300° C. or above and a pressure in the chamber is 5 Torr or above.

9 . The method of claim 1 , wherein the tungsten chloride is WCl 6 , WCl 5 or WCl 4 .

10 . The method of claim 1 , wherein the reduction gas is one or more gases selected among H 2 gas, SiH 4 gas, B 2 H 6 gas, and NH 3 gas.

11 . The method of claim 1 , wherein a thickness of the underlying film is 5 nm or less.

12 . The method of claim 1 , wherein the underlying film includes a titanium-based material film or a tungsten compound film.

13 . A computer-executable storage medium storing a program for controlling a film forming apparatus, wherein the program, when executed, causes a computer to control the film forming apparatus to perform the method of forming a tungsten film described in claim 1 .

Assignees

• Tokyo Electron Ltd

Inventors

• Suzuki Kenji
• Maekawa Koji
• Hotta Takanobu

Classifications

• H10P14/432 Primary

  using selective deposition · CPC title

• H10P14/418

  the conductive layers comprising transition metals · CPC title

• H10W20/057

  by selectively depositing, e.g. by using selective CVD or plating · CPC title

• H10W20/056

  by filling conductive material into holes, grooves or trenches · CPC title

• H10W20/033

  in openings in dielectrics · CPC title