Selective formation of metallic films on metallic surfaces

Patent metadata

Field	Value
Publication number	US-2016276208-A1
Application number	US-201614988374-A
Country	US
Kind code	A1
Filing date	Jan 5, 2016
Priority date	Jun 10, 2010
Publication date	Sep 22, 2016
Grant date	—

Abstract

Metallic layers can be selectively deposited on surfaces of a substrate relative to a second surface of the substrate. In preferred embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In preferred embodiments, a first precursor forms a layer or adsorbed species on the first surface and is subsequently reacted or converted to form a metallic layer. Preferably the deposition temperature is selected such that a selectivity of above about 90% is achieved.

First claim

1 . (canceled)

2 . A method for selectively depositing a film on a substrate comprising a first metal surface and a second surface comprising silicon oxide, the method comprising one or more deposition cycles comprising:
contacting the substrate with a first vapor-phase precursor comprising Si or B; and contacting the substrate with a second vapor-phase precursor comprising W, wherein the film is deposited on the first metal surface relative to the second surface with a selectivity of above about 50%.

3 . The method of claim 2 , wherein the first vapor-phase precursor comprises silane.

4 . The method of claim 2 , wherein the first vapor phase precursor comprises disilane.

5 . The method of claim 2 , wherein the first vapor phase precursor comprises trisilane.

6 . The method of claim 2 , wherein the first vapor phase precursor comprises diborane.

7 . The method of claim 2 , wherein the second vapor-phase precursor is WF 6 .

8 . The method of claim 2 , wherein the film consists essentially of elemental metal.

9 . The method of claim 2 , wherein the first metal surface comprises copper.

10 . The method of claim 2 , wherein the first metal surface comprises a noble metal.

11 . The method of claim 2 , wherein the second surface comprises a low-k material.

12 . The method of claim 2 , wherein the second surface comprises SiO 2 .

13 . The method of claim 2 , wherein the selectivity is above about 80%

14 . The method of claim 13 , wherein the selectivity is above about 90%.

15 . The method of claim 13 , wherein the selectivity is above about 95%.

16 . The method of claim 2 , further comprising repeating the deposition cycle two or more times in succession.

17 . The method of claim 2 , further comprising cleaning the substrate prior to the one or more deposition cycles.

18 . The method of claim 2 , further comprising treating the second surface prior to the one or more deposition cycles.

19 . The method of claim 18 , wherein treating comprises silylation.

20 . The method of claim 2 , wherein the deposition cycles are carried out at a deposition temperature of less than about 200° C.

21 . The method of claim 20 , wherein the deposition temperature is less than about 150° C.

Assignees

• Asm Int Nv

Inventors

• Haukka Suvi P
• Niskanen Antti
• Tuominen Marko

Classifications

• H10P70/27

  during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers · CPC title

• H10P14/432 Primary

  using selective deposition · CPC title

• H10P14/414

  of metal-silicide materials · CPC title

• H10P14/412

  Deposition of metallic or metal-silicide materials · CPC title

• H10P14/40

  of conductive or resistive materials · CPC title