Method and apparatus to deposit pure titanium thin film at low temperature using titanium tetraiodide precursor

Patent metadata

Field	Value
Publication number	US-9478438-B2
Application number	US-201414464462-A
Country	US
Kind code	B2
Filing date	Aug 20, 2014
Priority date	Aug 20, 2014
Publication date	Oct 25, 2016
Grant date	Oct 25, 2016

Abstract

Methods of depositing highly conformal and pure titanium films at low temperatures are provided. Methods involve exposing a substrate to titanium tetraiodide, purging the chamber, exposing the substrate to a plasma, purging the chamber, and repeating these operations. Titanium films are deposited at low temperatures less than about 450° C.

First claim

What is claimed is:

1. A method of depositing titanium on a semiconductor substrate in a chamber, the method comprising:
(a) depositing titanium using atomic layer deposition cycles at a temperature less than about 450° C., each cycle comprising:
(i) exposing the substrate to titanium tetraiodide,
(ii) purging the chamber,
(iii) exposing the substrate to an ignited plasma without a reactant, and
(iv) purging the chamber; and

(b) repeating (i) through (iv) until the desired thickness of titanium is deposited on the substrate.

2. The method of claim 1 , further comprising prior to exposing the substrate to titanium tetraiodide, pre-cleaning the substrate.

3. The method of claim 1 , wherein the substrate is exposed to a carrier gas throughout (i) through (iv).

4. The method of claim 3 , wherein the carrier gas is selected from the group consisting of argon, hydrogen, and combinations thereof.

5. The method of claim 1 , further comprising annealing the deposited titanium to form titanium silicide.

6. The method of claim 1 , wherein the plasma is generated remotely.

7. The method of claim 1 , wherein the plasma is generated in the chamber.

8. The method of claim 1 , wherein the substrate is exposed to titanium tetraiodide in (i) for a duration between 1 and about 30 seconds, the substrate is purged in (ii) and (iv) each for a duration between 1 and 5 seconds, and the substrate is exposed to a plasma in (iii) for a duration between 1 and 10 seconds.

9. The method of claim 1 , wherein the deposited titanium has less than about 1% contamination.

10. The method of claim 1 , wherein the deposited titanium has a film density of at least about 4.0 g/cc.

11. The method of claim 1 , wherein each cycle deposits titanium having a thickness of about 0.5 Å.

12. The method of claim 1 , wherein the deposited titanium has a step coverage of between about 70% and about 100%.

13. The method of claim 1 , wherein the chamber has a chamber pressure between about 0.1 Torr and about 20 Torr.

14. The method of claim 1 , wherein the substrate comprises features having aspect ratios between about 3:1 and about 10:1.

15. The method of claim 1 , further comprising:
(d) depositing titanium nitride using atomic layer deposition cycles at a temperature less than about 450° C., each cycle comprising:
(i) exposing the substrate to titanium tetraiodide,
(ii) purging the chamber,
(iii) exposing the substrate to a nitrogen-containing gas and igniting a plasma, and
(iv) purging the chamber; and

(e) repeating (i) through (iv) of (d) until the desired thickness of titanium nitride is deposited on the substrate.

16. The method of claim 15 , wherein the nitrogen-containing gas is selected from the group consisting of nitrogen, ammonia, hydrazines, and amines.

17. An apparatus for depositing titanium on a semiconductor substrate, the apparatus comprising:
a reaction chamber comprising a pedestal for holding the substrate;
at least one outlet for coupling to a vacuum;
one or more process gas inlets coupled to one or more precursor sources;
a remote radio frequency (RF) plasma generator; and
a controller for controlling operations in the apparatus, comprising machine-readable instructions for:
(a) setting the temperature of the pedestal in the reaction chamber to a temperature less than about 450° C.,
(b) introducing titanium tetraiodide to the reaction chamber,
(c) purging the reaction chamber,
(d) providing a plasma to the reaction chamber from the remote plasma generator,
(e) purging the reaction chamber, and
(f) repeating (b) through (e).

18. The apparatus of claim 17 , wherein the instructions are configured to deposit about 0.5 Å of titanium in each cycle of (b) through (e).

19. The apparatus of claim 17 , wherein the controller further comprises machine-readable instructions for:
(g) introducing titanium tetraiodide to the reaction chamber,
(h) purging the reaction chamber,
(i) providing a second plasma in the reaction chamber,
(j) introducing a nitrogen-containing gas to the reaction chamber,
(k) purging the reaction chamber, and
(l) repeating (g) through (k).

20. The apparatus of claim 19 , wherein the nitrogen-containing gas is selected from the group consisting of nitrogen, ammonia, hydrazines, and amines.

21. The apparatus of claim 17 , wherein the machine-readable instructions for providing the plasma to the reaction chamber from the remote plasma generator further comprises machine-readable instructions for providing the plasma without a reactant.

22. A method of depositing titanium on a semiconductor substrate in a chamber, the method comprising:
(a) depositing titanium using atomic layer deposition cycles at a temperature less than about 450° C., each cycle comprising:
(i) exposing the substrate to titanium tetraiodide,
(ii) purging the chamber,
(iii) exposing the substrate to an ignited plasma, and
(iv) purging the chamber; and

(b) repeating (i) through (iv) until the desired thickness of titanium is deposited on the substrate,
wherein the plasma is ignited in a remote plasma generator.

23. The method of claim 22 , wherein the deposited titanium has a step coverage of between about 70% and about 100%.

24. The method of claim 1 , wherein the temperature is 300° C.

25. The method of claim 22 , wherein the temperature is 300° C.

Assignees

• Lam Res Corp

Inventors

• Thombare Shruti Vivek
• Karim Ishtak
• Gopinath Sanjay
• Danek Michal

Classifications

• H01J37/32082

  Radio frequency generated discharge (H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence) · CPC title

• C23C16/14

  Deposition of only one other metal element · CPC title

• C23C16/45542

  Plasma being used non-continuously during the ALD reactions · CPC title

• C23C16/34

  Nitrides {(C23C16/303 takes precedence)} · CPC title

• C23C16/4485

  by evaporation without using carrier gas in contact with the source material (C23C16/4486 takes precedence) · CPC title