Group III nitride wafers and fabrication method and testing method
US-10156530-B2 · Dec 18, 2018 · US
with gallium, indium or thallium
with gallium, indium or thallium · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C01B21/0632 |
| Official title | {with gallium, indium or thallium} |
| Display label | with gallium, indium or thallium |
| Total patents | 116 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is stable.
| Year | Patents |
|---|---|
| 2015 | 16 |
| 2016 | 23 |
| 2017 | 6 |
| 2018 | 16 |
| 2019 | 7 |
| 2020 | 12 |
| 2021 | 7 |
| 2022 | 9 |
| 2023 | 5 |
| 2024 | 3 |
| 2025 | 8 |
| 2026 | 4 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Gallium nitride crystal, its manufacturing method, and crystal growth apparatus
US-2018291525-A1 · Oct 11, 2018 · US
Method for producing group III nitride crystal
US-10059590-B2 · Aug 28, 2018 · US
Group III nitride wafers and fabrication method and testing method
US-10024809-B2 · Jul 17, 2018 · US
Oxygen-doped group iii metal nitride and method of manufacture
US-2018195206-A1 · Jul 12, 2018 · US
Systems and methods for growing a non-phase separated group-III nitride semiconductor alloy
US-10000381-B2 · Jun 19, 2018 · US
Systems and methods for growing a non-phase separated group-iii nitride semiconductor alloy
US-2018118568-A9 · May 3, 2018 · US
Method of synthesising nitride nanocrystals
US-9938148-B2 · Apr 10, 2018 · US
Gallium nitride-based sintered compact and method for manufacturing same
US-2018072570-A1 · Mar 15, 2018 · US
Semiconductor epitaxial structure
US-9905726-B2 · Feb 27, 2018 · US
Method of producing periodic table group 13 metal nitride semiconductor crystal and periodic table group 13 metal nitride semiconductor crystal produced by this production method
US-9899568-B2 · Feb 20, 2018 · US
Nanolaminated 2-2-1 max-phase compositions
US-2018044182-A1 · Feb 15, 2018 · US
Method for producing gallium nitride crystal by reacting metal gallium and iron nitride
US-9890471-B2 · Feb 13, 2018 · US
High pressure reactor and method of growing group III nitride crystals in supercritical ammonia
US-9885121-B2 · Feb 6, 2018 · US
GaN-on-Si SEMICONDUCTOR DEVICE STRUCTURES FOR HIGH CURRENT/ HIGH VOLTAGE LATERAL GaN TRANSISTORS AND METHODS OF FABRICATION THEREOF
US-2018012770-A1 · Jan 11, 2018 · US
Method of fabricating group III nitride with gradually degraded crystal structure
US-9822465-B2 · Nov 21, 2017 · US
Method of fabricating bulk group III nitride crystals in supercritical ammonia
US-9790616-B2 · Oct 17, 2017 · US
High pressure reactor and method of growing group III nitride crystals in supercritical ammonia
US-9783910-B2 · Oct 10, 2017 · US
Group III nitride crystals, their fabrication method, and method of fabricating bulk group III nitride crystals in supercritical ammonia
US-9670594-B2 · Jun 6, 2017 · US
Method for producing nitride crystal and nitride crystal
US-2017051434-A1 · Feb 23, 2017 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC C01B21/0632?
- CPC C01B21/0632 is the Cooperative Patent Classification code for “with gallium, indium or thallium.”
- How many patents are filed under CPC C01B21/0632 (with gallium, indium or thallium)?
- Our database includes 116 publications tagged with this CPC code.
- Is patent activity under CPC C01B21/0632 growing?
- Publication counts under this code: 3 in 2024 vs 8 in 2025 (latest complete years).