Semiconductor epitaxial structure

Patent metadata

Field	Value
Publication number	US-9905726-B2
Application number	US-201314098775-A
Country	US
Kind code	B2
Filing date	Dec 6, 2013
Priority date	Jan 12, 2011
Publication date	Feb 27, 2018
Grant date	Feb 27, 2018

Abstract

A semiconductor epitaxial structure is provided. The semiconductor epitaxial structure includes a substrate, a doped semiconductor epitaxial layer, and a carbon nanotube layer. The doped semiconductor epitaxial layer is located on the substrate. The carbon nanotube layer is located between the substrate and the doped semiconductor epitaxial layer. The carbon nanotube layer can be a carbon nanotube film drawn from a carbon nanotube array and including a number of successive and oriented carbon nanotubes joined end-to-end by van der Waals attractive force therebetween.

First claim

What is claimed is:

1. A semiconductor epitaxial structure, comprising:
a substrate;
a first doped semiconductor epitaxial layer located on the substrate, wherein the first doped semiconductor epitaxial layer comprises a first surface adjacent to the substrate;
a first carbon nanotube layer sandwiched between the substrate and the first surface of the first doped semiconductor epitaxial layer, wherein the first carbon nanotube layer is spaced from the first surface and comprises a plurality of first carbon nanotubes;
a second doped semiconductor epitaxial layer located on the first doped semiconductor epitaxial layer, wherein the second doped semiconductor epitaxial layer comprises a second surface adjacent to the first doped semiconductor epitaxial layer; and
a second carbon nanotube layer sandwiched between the first doped semiconductor epitaxial layer and the second surface of the second doped semiconductor epitaxial layer, wherein the second carbon nanotube layer comprises a plurality of second carbon nanotubes.

2. The semiconductor epitaxial structure of claim 1 , wherein each of the plurality of first carbon nanotubes is spaced from the first surface.

3. The semiconductor epitaxial structure of claim 1 , wherein the plurality of first carbon nanotubes are multi-walled carbon nanotubes, and the first carbon nanotube layer consists of the plurality of first carbon nanotubes.

4. The semiconductor epitaxial structure of claim 1 , wherein each of the plurality of second carbon nanotubes is spaced from the second surface.

5. The semiconductor epitaxial structure of claim 1 , wherein parts of the second surface is in direct contact with the first doped semiconductor epitaxial layer.

Assignees

• Univ Tsinghua
• Hon Hai Prec Ind Co Ltd

Inventors

• Wei Yang
• Fan Shou Shan

Classifications

• H10P14/3211

  Silicon, silicon germanium or germanium · CPC title

• H10P14/2922

  being non-crystalline insulating materials, e.g. glass or polymers · CPC title

• H10P72/0434

  mainly by convection · CPC title

• H10P14/3458

  Monocrystalline · CPC title

• H10P14/3444

  P-type · CPC title