Systems and methods for growing a non-phase separated group-III nitride semiconductor alloy

Patent metadata

Field	Value
Publication number	US-10000381-B2
Application number	US-201514860226-A
Country	US
Kind code	B2
Filing date	Sep 21, 2015
Priority date	Nov 8, 2010
Publication date	Jun 19, 2018
Grant date	Jun 19, 2018

Abstract

Systems and methods for MBE growing of group-III Nitride alloys, comprising establishing an average reaction temperature range from about 250 C to about 850 C; introducing a nitrogen flux at a nitrogen flow rate; introducing a first metal flux at a first metal flow rate; and periodically stopping and restarting the first metal flux according to a first flow duty cycle. According to another embodiment, the system comprises a nitrogen source that provides nitrogen at a nitrogen flow rate, and, a first metal source comprising a first metal effusion cell that provides a first metal at a first metal flow rate, and a first metal shutter that periodically opens and closes according to a first flow duty cycle to abate and recommence the flow of the first metal from the first metal source. Produced alloys include AlN, InN, GaN, InGaN, and AlInGaN.

First claim

We claim:

1. A single-phase, group-III Nitride film comprising the formula In x M 1-x N,
wherein x is from about 37% to about 72%;
M comprises gallium, aluminum or a mixture thereof; and
the film is free of phase separation.

2. The group-III Nitride film of claim 1 , wherein x is from about 45% to about 72%.

3. The group-III Nitride film of claim 1 , wherein x is from about 37% to about 45%.

4. The group-III Nitride film of claim 1 , wherein M is gallium.

5. The group-III Nitride film of claim 4 , wherein M further comprises aluminum.

6. The group-III Nitride film of claim 1 , wherein the film is free of surface defects and surface pitting.

7. The group-III Nitride film of claim 1 , wherein an x-ray diffraction rocking curve of the film is less than about 416 arcseconds.

8. The group-III Nitride film of claim 1 , wherein an x-ray diffraction rocking curve of the film is less than about 362 arcseconds.

9. The group-III Nitride film of claim 1 , wherein a root-mean-square roughness of the film as measured by atomic force microscopy is less than about 0.76 nanometers.

10. The group-III Nitride film of claim 1 , wherein a root-mean-square roughness of the film as measured by atomic force microscopy is less than about 0.53 nanometers.

11. A single phase group-III Nitride film comprising:
aluminum in an amount from about 13.2% to about 24.8%; and
gallium;
wherein the film is free of surface defects and surface pitting, and wherein an x-ray diffraction rocking curve of the film is less than about 146 arcseconds.

12. The group-III Nitride film of claim 11 , further comprising indium.

13. The group-III Nitride film of claim 12 , wherein the film is free of phase separation.

Assignees

• Georgia Tech Res Inst

Inventors

• Moseley Michael William
• Doolittle William Alan

Classifications

• H10P14/3444

  P-type · CPC title

• H10P14/3416

  Nitrides · CPC title

• H10P14/3216

  Nitrides · CPC title

• H10P14/2921

  being crystalline insulating materials · CPC title

• H10P14/2901

  Materials · CPC title