High pressure reactor and method of growing group III nitride crystals in supercritical ammonia

Patent metadata

Field	Value
Publication number	US-9783910-B2
Application number	US-201615194350-A
Country	US
Kind code	B2
Filing date	Jun 27, 2016
Priority date	Apr 7, 2006
Publication date	Oct 10, 2017
Grant date	Oct 10, 2017

Abstract

Provided is a high-pressure reactor suitable for a high-pressure process using supercritical ammonia grow bulk crystal of group III nitride having lateral dimension larger than 2 inches or to form various transition metal nitrides. The reactor has nutrient distributed along the reactor's longitudinal axis and seed material positioned at the reactor's inner wall and along the reactor's longitudinal axis. Nutrient diffuses through supercritical ammonia from the reactor's longitudinal axis and deposits on the seed material positioned by the reactor's inner wall. Both the nutrient and seed material are heated by the same heater. Material growth can primarily be due to material diffusion through supercritical ammonia. This configuration and methodology reduce convective movement of supercritical ammonia due to temperature differential, providing a more quiescent environment in which group III nitride or transition metal nitride is formed.

First claim

What is claimed is:

1. A high pressure reactor for growing group III nitride in an ammonothermal growth process comprising
(a) a cylindrical reactor body defining a chamber and having a longitudinal axis and an inner sidewall parallel to the longitudinal axis;
(b) a nutrient container extending along a majority of the longitudinal axis of the cylindrical reactor body;
(c) one or more seed retainers adjacent to the inner sidewall of the cylindrical reactor body and extending along a majority of the longitudinal axis of the cylindrical reactor body.

2. A high pressure reactor according to claim 1 , wherein said seed retainers are distributed around a circumference of the cylindrical reactor body to locate seeds around the circumference and the majority of the longitudinal axis of the cylindrical reactor body.

3. A high pressure reactor according to claim 1 , wherein the reactor body has no baffle within the chamber.

4. A high pressure reactor according to claim 1 , wherein the nutrient container comprises a plurality of stackable baskets.

5. A high pressure reactor according to claim 1 , wherein the nutrient container and the seed retainers are positioned to be heated by the same heater that is positioned external to the reactor's cylindrical body.

Assignees

• Sixpoint Mat Inc
• Seoul Semiconductor Co Ltd

Inventors

• Hashimoto Tadao

Classifications

• C30B7/105 Primary

  using ammonia as solvent, i.e. ammonothermal processes · CPC title

• C30B29/406

  Gallium nitride · CPC title

• H01L29/2003

  Electricity · mapped topic

• Y02P20/544

  Cross-Sectional Technologies · mapped topic

• C01B21/0632

  with gallium, indium or thallium · CPC title