High pressure reactor and method of growing group III nitride crystals in supercritical ammonia

Patent metadata

Field	Value
Publication number	US-9885121-B2
Application number	US-201615194284-A
Country	US
Kind code	B2
Filing date	Jun 27, 2016
Priority date	Apr 7, 2006
Publication date	Feb 6, 2018
Grant date	Feb 6, 2018

Abstract

Provided is a high-pressure reactor suitable for a high-pressure process using supercritical ammonia grow bulk crystal of group III nitride having lateral dimension larger than 2 inches or to form various transition metal nitrides. The reactor has nutrient distributed along the reactor's longitudinal axis and seed material positioned at the reactor's inner wall and along the reactor's longitudinal axis. Nutrient diffuses through supercritical ammonia from the reactor's longitudinal axis and deposits on the seed material positioned by the reactor's inner wall. Both the nutrient and seed material are heated by the same heater. Material growth can primarily be due to material diffusion through supercritical ammonia. This configuration and methodology reduce convective movement of supercritical ammonia due to temperature differential, providing a more quiescent environment in which group III nitride or transition metal nitride is formed.

First claim

What is claimed is:

1. A method of growing group III nitride crystals using a cylindrical reactor having longitudinal dimension more than ten times larger than the inner diameter comprising:
(a) placing nutrient which contains group III element along the longitudinal direction of the cylindrical reactor;
(b) placing group III nitride seed crystals on or near the wall of the cylindrical reactor so that each seed faces the nutrient;
(c) placing a mineralizer which contains either alkali metal or halogen elements inside the cylindrical reactor;
(d) filling ammonia in the cylindrical reactor;
(e) heating the cylindrical reactor with external heaters to create supercritical ammonia.

2. A method according to claim 1 , wherein the cylindrical reactor does not have a flow restricting plate inside to separate the nutrient and the seed crystals.

3. A method according to claim 1 , wherein the both nutrient and seed crystals extend more than 75% of the length of the reactor along the longitudinal direction.

4. A method according to claim 1 , wherein one side of the basal plane of each seed crystal faces the nutrient.

5. A method according to claim 1 , wherein the distance from one seed crystal to the nearest nutrient is about the same for all seed crystals in the cylindrical reactor.

6. A method according to claim 1 , wherein the distance from one seed crystal to the nearest nutrient is within 10% difference from the average distance from one seed crystal to the nearest nutrient.

7. A method according to claim 1 , wherein the cylindrical reactor is heated at about uniform temperature.

8. A method according to claim 1 , wherein the nutrient is selected so that the dissolution speed in the supercritical ammonia is faster than that of the seed crystal.

9. A method according to claim 1 , wherein the total surface area of the nutrient is larger than the total surface area of the seed crystal.

10. A method according to claim 1 , wherein the nutrient contains polycrystalline gallium nitride.

11. A method according to claim 1 , wherein seed crystals are single crystalline or highly oriented polycrystalline gallium nitride.

12. A method according to claim 1 , wherein the mineralizer is selected from metallic lithium, metallic sodium, metallic potassium, lithium amide, sodium amide, potassium amide, fluorine, chlorine, bromine, iodine, ammonium fluoride, ammonium chloride, ammonium bromide or ammonium iodide.

13. A method according to claim 1 , wherein the group III nitride is gallium nitride.

14. A method according to claim 1 , wherein the longitudinal dimension of the cylindrical reactor is more than fifteen times larger than the inner diameter.

15. A method according to claim 1 , wherein the longitudinal dimension of the cylindrical reactor is more than twenty times larger than the inner diameter.

16. A method of growing group III nitride crystals comprising
(a) dissolving a nutrient formed of a group III element in supercritical ammonia;
(b) transporting dissolved nutrient to a plurality of group III nitride seeds using the supercritical ammonia;
(c) simultaneously depositing the dissolved nutrient on the plurality of group III nitride seeds, wherein the nutrient is dissolved and deposited without providing a temperature differential between the dissolving and the depositing of the nutrient.

17. A method according to claim 16 , wherein a transport mechanism for the dissolved nutrient is primarily diffusion through the supercritical ammonia due to a concentration gradient in the supercritical ammonia between the vicinity of the nutrient and the vicinity of the seeds.

18. A method according to claim 16 , wherein convective flow of the supercritical ammonia is reduced because of the lack of the temperature differential between the nutrient dissolving and the nutrient depositing.

Assignees

• Sixpoint Mat Inc
• Seoul Semiconductor Co Ltd

Inventors

• Hashimoto Tadao

Classifications

• Y02P20/544

  Cross-Sectional Technologies · mapped topic

• C30B29/406

  Gallium nitride · CPC title

• C30B7/105 Primary

  using ammonia as solvent, i.e. ammonothermal processes · CPC title

• C01B21/0632

  with gallium, indium or thallium · CPC title

• H01L29/2003

  Electricity · mapped topic