Method of fabricating bulk group III nitride crystals in supercritical ammonia

Patent metadata

Field	Value
Publication number	US-9790616-B2
Application number	US-201514957549-A
Country	US
Kind code	B2
Filing date	Dec 2, 2015
Priority date	Apr 7, 2006
Publication date	Oct 17, 2017
Grant date	Oct 17, 2017

Abstract

In one instance, the invention provides a group III nitride crystal having a first side exposing nitrogen polar c-plane of single crystalline or highly oriented polycrystalline group III nitride and a second side exposing group III polar surface, polycrystalline phase, or amorphous phase of group III nitride. Such structure is useful as a seed crystal for ammonothermal growth of bulk group III nitride crystals. The invention also discloses the method of fabricating such crystal. The invention also discloses the method of fabricating a bulk crystal of group III nitride by ammonothermal method using such crystal.

First claim

What is claimed is:

1. A method of fabricating a bulk crystal of gallium nitride in a high-pressure reactor comprising
(a) placing at least one gallium nitride seed crystal in the high pressure reactor;
(b) placing at least one kind of mineralizer in the high pressure reactor;
(c) placing at least one flow-restricting plate in the high pressure reactor
(d) placing gallium containing nutrient in the high pressure reactor;
(e) placing ammonia in the high pressure reactor;
(f) sealing the high pressure reactor;
(g) heating the high pressure reactor with appropriate temperature difference between a region for the seed crystals and a region for the nutrient in the high pressure reactor to grow the bulk crystal of gallium nitride;
wherein the crystal structural quality of the nitrogen polar surface of the gallium nitride seed crystal is better than the crystal structural quality of the gallium polar surface of the seed crystal, and
wherein the transition of the crystal quality from the nitrogen polar surface to the gallium polar surface of the gallium nitride seed crystal is gradual.

2. A method of fabricating a bulk crystal of gallium nitride according to claim 1 , wherein the nitrogen polar surface of the gallium nitride seed crystal is free from cracking.

3. A method of fabricating a bulk crystal of gallium nitride according to claim 1 , wherein the oxygen concentration of the nitrogen polar surface of the gallium nitride seed crystal is less than the oxygen concentration of the gallium polar surface.

4. A method of fabricating a bulk crystal of gallium nitride according to claim 3 , wherein the oxygen concentration of the gallium polar surface is more than ten times higher than the oxygen concentration of the nitrogen polar surface of the gallium nitride seed crystal.

5. A method of fabricating a bulk crystal of gallium nitride according to claim 1 , wherein the full width half maximum of X-ray rocking curve of the 002 reflection from the nitrogen polar surface of the gallium nitride seed crystal is smaller than the full width half maximum of X-ray rocking curve of the 002 reflection from the gallium polar surface of the gallium nitride seed crystal.

6. A method of fabricating a bulk crystal of gallium nitride according to claim 2 , wherein the full width half maximum of X-ray rocking curve of the 002 reflection from the nitrogen polar surface of the gallium nitride seed crystal is smaller than the full width half maximum of X-ray rocking curve of the 002 reflection from the gallium polar surface of the gallium nitride seed crystal.

7. A method of fabricating a bulk crystal of gallium nitride according to claim 3 , wherein the full width half maximum of X-ray rocking curve of the 002 reflection from the nitrogen polar surface of the gallium nitride seed crystal is smaller than the full width half maximum of X-ray rocking curve of the 002 reflection from the gallium polar surface of the gallium nitride seed crystal.

8. A method of fabricating a bulk crystal of gallium nitride according to claim 4 , wherein the full width half maximum of X-ray rocking curve of the 002 reflection from the nitrogen polar surface of the gallium nitride seed crystal is smaller than the full width half maximum of X-ray rocking curve of the 002 reflection from the gallium polar surface of the gallium nitride seed crystal.

9. A method of fabricating a bulk crystal of gallium nitride according to claim 1 , wherein the thickness of the gallium nitride seed crystal is more than 0.1 mm.

10. A method of fabricating a bulk crystal of gallium nitride according to claim 1 , wherein the nitrogen polar surface of the gallium nitride seed crystal is polished to obtain a suitable surface for ammonothermal growth of bulk crystal.

11. A method of fabricating a bulk crystal of gallium nitride according to claim 1 , wherein the gallium nitride seed crystal was fabricated by hydride vapor phase epitaxy.

Assignees

• Sixpoint Mat Inc
• Seoul Semiconductor Co Ltd

Inventors

• Hashimoto Tadao

Classifications

• C30B29/68

  Crystals with laminate structure, e.g. "superlattices" · CPC title

• C30B25/02

  Epitaxial-layer growth · CPC title

• C30B29/406

  Gallium nitride · CPC title

• C01B21/0632

  with gallium, indium or thallium · CPC title

• C30B25/16

  Controlling or regulating (controlling or regulating in general G05) · CPC title