Method for planarizing one or more workpieces, a workpiece planarization arrangement, a chuck and a replaceable workpiece-support for a chuck

Patent metadata

Field	Value
Publication number	US-9862037-B2
Application number	US-201615065914-A
Country	US
Kind code	B2
Filing date	Mar 10, 2016
Priority date	Mar 10, 2016
Publication date	Jan 9, 2018
Grant date	Jan 9, 2018

Abstract

According to various embodiments, a workpiece planarization arrangement may include: a chuck including a support carrier; and a workpiece-support replaceably mounted on the support carrier; and a planarization tool configured to planarize the at least one portion of the workpiece-support and to planarize one or more workpieces on the at least one portion of the workpiece-support.

First claim

What is claimed is:

1. A semiconductor workpiece planarization arrangement, comprising:
a vacuum or electrostatic chuck comprising at least one portion configured to support one or more semiconductor workpieces; and
a planarization tool configured to planarize the at least one portion of the chuck and to planarize one or more semiconductor workpieces on the at least one portion of the chuck;
wherein a mechanical hardness of the at least one portion of the chuck is configured such that planarizing the one or more semiconductor workpieces and planarizing the at least one portion of the chuck use the planarization tool in the same machining bit configuration.

2. The semiconductor workpiece planarization arrangement of claim 1 , the planarization tool comprising:
a machining bit configured to revolve about a rotation axis;
wherein the planarization tool and the chuck are configured for a displacement other parallel to a direction perpendicular to the rotation axis.

3. The semiconductor workpiece planarization arrangement of claim 1 ,
wherein a mechanical hardness of the machining bit is more than a mechanical hardness of at least one of the chuck and the one or more semiconductor workpieces.

4. The semiconductor workpiece planarization arrangement of claim 1 ,
wherein the chuck comprises at least one vacuum line for connecting to a vacuum creating system; and
wherein the at least one portion of the chuck comprises at least one through hole connected to the at least one vacuum line.

5. The semiconductor workpiece planarization arrangement of claim 1 ,
wherein the chuck comprises a plurality of vacuum lines;
wherein the at least one portion of the chuck comprises a plurality of adhesion regions separated from each other, wherein each adhesion region of the plurality of adhesion regions comprises at least one through hole;
wherein the at least one through hole of each adhesion region of the plurality of adhesion regions is connected to at least one vacuum line of the plurality of vacuum lines.

6. The semiconductor workpiece planarization arrangement of claim 1 ,
wherein the at least one portion of the chuck is proximate a side of the chuck configured to support one or more semiconductor workpieces;
wherein the chuck comprises at least one further portion distant from the side; and
wherein a mechanical hardness of the at least one further portion of the chuck is greater than a mechanical hardness of the at least one portion of the chuck.

7. The semiconductor workpiece planarization arrangement of claim 6 ,
wherein the at least one further portion comprises a metallic material.

8. The semiconductor workpiece planarization arrangement of claim 6 ,
wherein the at least one portion of the chuck protrudes from the at least one further portion.

9. The semiconductor workpiece planarization arrangement of claim 6 ,
wherein the at least one portion of the chuck is replaceably mounted to the at least one further portion.

10. The semiconductor workpiece planarization arrangement of claim 1 ,
wherein the at least one portion comprises at least one of a foil and a plate.

11. The semiconductor workpiece planarization arrangement of claim 1 ,
wherein a mechanical hardness of the at least one portion of the chuck is less than a mechanical hardness of at least one of a nickel-based alloy and an iron-based alloy.

12. The semiconductor workpiece planarization arrangement of claim 1 ,
wherein the at least one portion of the chuck comprises a polymer.

13. The semiconductor workpiece planarization arrangement of claim 1 ,
wherein the planarizing the one or more semiconductor workpieces and the planarizing the at least one portion of the chuck differ in a speed of at least one of a rotation of the planarization tool, a displacement between the chuck and the planarization tool, a revolution of a machining bit of the planarization tool.

14. A vacuum or electrostatic chuck, comprising:
a first side configured to be mounted to a chuck holder;
a second side opposite the first side, wherein the second side is configured to support one or more semiconductor workpieces;
at least one vacuum line for connecting to a vacuum creating system; and
at least one portion proximate the second side comprising at least one through hole connected to the at least one vacuum line such that one or more semiconductor workpieces received over the second side is adhered by suction when a vacuum is created via the at least one vacuum line;
wherein a mechanical hardness of the at least one portion proximate the second side is configured such that planarizing the one or more semiconductor workpieces and planarizing the at least one portion use a planarization tool in the same machining hit configuration.

15. The chuck of claim 14 ,
wherein the at least one portion is distant from the first side;
wherein the chuck comprises at least one further portion proximate the first side; and
wherein a mechanical hardness of the at least one further portion is greater than the mechanical hardness of the at least one portion.

16. The chuck of claim 15 ,
wherein the at least one further portion comprises a metallic material.

17. The chuck of claim 14 ,
wherein the at least one portion comprises at least one of a foil and a plate.

18. The chuck of claim 14 ,
wherein the mechanical hardness of the at least one portion of the chuck is less than a mechanical hardness of at least one of a nickel-based alloy and an iron-based alloy.

19. The chuck of claim 14 ,
wherein the at least one portion of the chuck comprises a polymer.

20. A method for planarizing one or more semiconductor workpieces, the method comprising:
planarizing at least one portion of a vacuum or electrostatic chuck using a planarization tool;
disposing one or more semiconductor workpieces over the at least one portion of the chuck after the planarizing the at least one portion of the chuck; and
planarizing the one or more semiconductor workpieces using the planarization tool;
wherein a mechanical hardness of the at least one portion of the chuck is configured such that the planarizing the one or more semiconductor workpieces and the planarizing the at least one portion of the chuck use the planarization tool in the same machining bit configuration.

Assignees

• Infineon Technologies Ag

Inventors

• Muri Ingo
• Binter Alexander
• Goller Bernhard
• Grindling Christian

Classifications

• H10P72/7616

  characterised by a coating, a hardness or a material · CPC title

• H10P72/7614

  characterised by a plurality of individual support members, e.g. support posts or protrusions · CPC title

• H10P72/0428

  Apparatus for mechanical treatment or grinding or cutting · CPC title

• H10P72/78 Primary

  using vacuum or suction, e.g. Bernoulli chucks · CPC title

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title