Solid-state imaging device with channel stop region with multiple impurity regions in depth direction and method for manufacturing the same
US-9799691-B2 · Oct 24, 2017 · US
Imaging device and electronic apparatus
US9853085B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9853085-B2 |
| Application number | US-201515109865-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 14, 2015 |
| Priority date | Jan 21, 2014 |
| Publication date | Dec 26, 2017 |
| Grant date | Dec 26, 2017 |
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Abstract
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There is provided an imaging device that includes photovoltaic type pixels that have photoelectric conversion regions generating photovoltaic power for each pixel depending on irradiation light; and an element isolation region that is provided between the photoelectric conversion regions of adjacent pixels and in a state of substantially surrounding the photoelectric conversion region.
First claim
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What is claimed is: 1. An imaging device comprising: photovoltaic type pixels that have photoelectric conversion regions generating photovoltaic power for each pixel depending on irradiation light; an element isolation region that is provided between the photoelectric conversion regions of adjacent pixels and in a state of substantially surrounding at least one of the photoelectric conversion regions; and an accumulation type pixel that is provided in a position adjacent to at least one of the photovoltaic type pixels. 2. The imaging device according to claim 1 , wherein the element isolation region is configured of a material that blocks diffusion of signal charge of the photovoltaic type pixels to the adjacent pixel. 3. The imaging device according to claim 1 , wherein a PN junction diode is formed in the photoelectric conversion regions as a photo-sensor. 4. The imaging device according to claim 3 , wherein the photovoltaic type pixel further includes a transfer gate and floating diffusion and operates as an accumulation type and photovoltaic type pixel. 5. The imaging device according to claim 4 , further comprising: an accumulation type pixel that is provided in a position adjacent to the accumulation type and photovoltaic type pixel. 6. The imaging device according to claim 3 , further comprising: an accumulation type and photovoltaic type pixel having the photoelectric conversion region, a transfer gate, and floating diffusion, wherein the photovoltaic type pixel and the accumulation type and photovoltaic type pixel are formed adjacent to each other. 7. The imaging device according to claim 1 , wherein a portion between the photoelectric conversion region and a pixel circuit region in each pixel is insulated. 8. An electronic apparatus equipped with an imaging device, wherein the imaging device includes photovoltaic type pixels that have photoelectric conversion regions generating photovoltaic power for each pixel depending on irradiation light, an element isolation region that is provided between the photoelectric conversion regions of adjacent pixels and in a state of substantially surrounding at least one of the photoelectric conversion regions, and an accumulation type pixel that is provided in a position adjacent to at least one of the photovoltaic type pixels. 9. An imaging device comprising: a photovoltaic type pixel having a photoelectric conversion region; an element isolation region, wherein the element isolation region substantially surrounds the photoelectric conversion region of the photovoltaic type pixel; and an accumulation type pixel adjacent to the photovoltaic type pixel. 10. The imaging device according to claim 9 , wherein the element isolation region is configured of a material that blocks diffusion of a signal charge of the photovoltaic type pixel to the adjacent pixel. 11. The imaging device according to claim 9 , wherein a PN junction diode is formed in the photoelectric conversion region as a photo-sensor. 12. The imaging device according to claim 11 , wherein the photovoltaic type pixel further includes a transfer gate and a floating diffusion. 13. The imaging device according to claim 12 , wherein the photovoltaic type pixel operates as an accumulation type and photovoltaic type pixel. 14. The imaging device according to claim 13 , wherein the accumulation type pixel is adjacent to the accumulation type and photovoltaic type pixel. 15. The imaging device according to claim 9 , further comprising: an accumulation type and photovoltaic type pixel having the photoelectric conversion region, a transfer gate, and floating diffusion, wherein the photovoltaic type pixel and the accumulation type and photovoltaic type pixel are adjacent to each other.
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9853085B2 cover?
- There is provided an imaging device that includes photovoltaic type pixels that have photoelectric conversion regions generating photovoltaic power for each pixel depending on irradiation light; and an element isolation region that is provided between the photoelectric conversion regions of adjacent pixels and in a state of substantially surrounding the photoelectric conversion region.
- Who is the assignee on this patent?
- Sony Corp, Sony Semiconductor Solutions Corp
- What technology area does this patent fall under?
- Primary CPC classification H01L27/14887. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Dec 26 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).