Solid state imaging device, method of manufacturing the same, and imaging apparatus

Patent metadata

Field	Value
Publication number	US-9509929-B2
Application number	US-201514747241-A
Country	US
Kind code	B2
Filing date	Jun 23, 2015
Priority date	Oct 3, 2007
Publication date	Nov 29, 2016
Grant date	Nov 29, 2016

Abstract

A solid state imaging device including: a plurality of sensor sections formed in a semiconductor substrate in order to convert incident light into an electric signal; a peripheral circuit section formed in the semiconductor substrate so as to be positioned beside the sensor sections; and a layer having negative fixed electric charges that is formed on a light incidence side of the sensor sections in order to form a hole accumulation layer on light receiving surfaces of the sensor sections.

First claim

What is claimed is:

1. An imaging apparatus comprising:
a condensing optical section that condenses incident light;
a solid state imaging device that receives the light condensed in the condensing optical section and performs photoelectric conversion of the received light; and
a signal processing section that processes a signal photoelectrically converted,
wherein
the solid state imaging device includes:
(a) a sensor section formed in a semiconductor substrate in order to convert incident light into an electric signal; and
(b) a layer having negative fixed electric charges that is formed on a light incident side of the semiconductor substrate,
wherein the N-type impurity region is formed between at least a portion of a peripheral circuit section and at least a portion of the layer having negative fixed electric charges.

2. The imaging apparatus according to claim 1 , wherein the layer having negative fixed electric charges is a hafnium oxide (HfO 2 ) layer, an aluminium oxide (Al 2 O 3 ) layer, a zirconium oxide (ZrO 2 ) layer, a tantalum oxide (Ta 2 O5) layer, or a titanium oxide (TiO 2 ) layer.

3. The imaging apparatus according to claim 1 , wherein:
the layer having negative fixed electric charges is formed on the light receiving surface of the sensor section formed in the semiconductor substrate.

4. The imaging apparatus according to claim 1 , further comprising:
a plurality of sensor sections, wherein the plurality of sensor sections convert incident light into an electric signal, and wherein the plurality of sensor sections form a pixel array section; and
a wiring layer provided on a surface of the semiconductor substrate formed with the pixel array section,
wherein
the solid state imaging device is a back illuminated solid state imaging device, and wherein the light incident surface is on a side of the semiconductor substrate opposite the surface of the semiconductor substrate on which the wiring layer is formed.

5. The imaging apparatus according to claim 1 , further comprising:
a light shielding layer, wherein at least a portion of the layer having negative fixed electric charges is between the light shielding layer and the N-type impurity region.

6. The imaging apparatus according to claim 5 , further comprising:
a diffusion layer, wherein the diffusion layer is between the N-type impurity region and the peripheral circuit section.

Assignees

• Sony Corp

Inventors

• Ohgishi Yuko

Classifications

• H10F39/199 Primary

  Back-illuminated image sensors · CPC title

• H04N5/378

  Electricity · mapped topic

• H01L27/14806

  Electricity · mapped topic

• H01L27/1462

  Electricity · mapped topic

• H04N5/369

  Electricity · mapped topic