Photomasks, methods of fabricating the photomasks, and method of fabricating semiconductor devices by using the photomasks

Patent metadata

Field	Value
Publication number	US-9817309-B2
Application number	US-201514700175-A
Country	US
Kind code	B2
Filing date	Apr 30, 2015
Priority date	Aug 14, 2014
Publication date	Nov 14, 2017
Grant date	Nov 14, 2017

Abstract

Provided are photomasks, methods of fabricating the photomasks, and methods of fabricating a semiconductor device by using the photomasks, in which a critical dimension (CD) of a pattern of a specific region of the photomask is corrected to improve the distribution of CDs of the pattern formed on a wafer. The photomasks may include a substrate and a light-blocking pattern formed on the substrate that includes an absorber layer and an anti-reflection coating (ARC) layer. The light-blocking pattern may include at least one of a first corrected area in which a top surface of the absorber layer is exposed, and a second corrected area in which a correction layer is formed on the ARC layer.

First claim

What is claimed is:

1. A method of fabricating a photomask, the method comprising:
forming an absorber layer on a substrate;
forming a light-blocking pattern by patterning the absorber layer; and
correcting a critical dimension (CD) of the light-blocking pattern in a correction target area by removing an upper portion of the light-blocking pattern in the correction target area.

2. The method of claim 1 , wherein correcting the CD of the light-blocking pattern in the correction target area comprises:
spraying an etch gas onto the light-blocking pattern; and then
irradiating electronic beams (e-beams) onto an upper surface of the light-blocking pattern in the correction target area to remove the upper portion of the light-blocking pattern in the correction target area.

3. The method of claim 1 further comprising forming an anti-reflection coating (ARC) layer on the absorber layer,
wherein forming the light-blocking pattern further comprises patterning the ARC layer.

4. The method of claim 3 , wherein correcting the CD of the light-blocking pattern in the correction target area comprises exposing a top surface of the absorber layer by removing a portion of the ARC layer in the correction target area.

5. The method of claim 1 , wherein the CD of the light-blocking pattern in the correction target area increases by removing the upper portion of the light-blocking pattern in the correction target area.

6. The method of claim 1 , wherein correcting the CD of the light-blocking pattern in the correction target area comprises removing the upper portion of the light-blocking pattern in the correction target area by using an etching process using electronic beams (e-beams) or focused ion beams (FIBs), a plasma etching process and/or a sputtering etching process.

7. The method of claim 1 , wherein the light-blocking pattern protrudes from the substrate in a vertical direction, and
wherein removing the upper portion of the light-blocking pattern in the correction target area reduces a thickness of the light-blocking pattern in the correction target in the vertical direction.

8. The method of claim 7 , wherein the thickness of the light-blocking pattern in the correction target reduced by removing the upper portion of the light-blocking pattern in the correction target area is about 10 nm or less.

9. A method of forming a photomask comprising:
forming an absorber layer on a substrate;
forming a light-blocking pattern by patterning the absorber layer; and
forming a corrected area in the light-blocking pattern by removing an upper portion of the light-blocking pattern in the corrected area or by forming a correction layer on the light-blocking pattern in the corrected area, the correction layer and the absorber layer comprising a same material.

10. The method of claim 9 , wherein a first thickness of the upper portion of the light-blocking pattern removed or a second thickness of the correction layer is about 10 nm or less.

11. The method of claim 9 , wherein forming the corrected area in the light-blocking pattern comprises providing a reaction gas on a surface of the light-blocking pattern and then providing an irradiating electronic beam on a portion of the surface of the light-blocking pattern in the corrected area to remove the upper portion of the light-blocking pattern in the corrected area or to form the correction layer on the light-blocking pattern in the corrected area.

12. The method of claim 9 further comprising forming an anti-reflection coating (ARC) layer on the absorber layer before patterning the absorber layer,
wherein forming the light-blocking pattern comprises sequentially patterning the ARC layer and the absorber layer, and
wherein removing the upper portion of the light-blocking pattern in the corrected area comprises removing a portion of the ARC layer that is in the corrected area such that an upper surface of the absorber layer is exposed in the corrected area.

13. The method of claim 9 , wherein forming the corrected area in the light-blocking pattern by removing the upper portion of the light-blocking pattern in the corrected area further comprises recessing a sidewall of the light-blocking pattern in the corrected area.

14. The method of claim 9 further comprising forming an anti-reflection coating (ARC) layer on the absorber layer before patterning the absorber layer,
wherein forming the light-blocking pattern comprises sequentially patterning the ARC layer and the absorber layer, and
wherein forming the correction layer on the light-blocking pattern in the corrected area comprises forming the correction layer on the ARC layer such that the ARC layer is between the absorber layer and the correction layer.

15. The method of claim 9 , wherein forming the corrected area in the light-blocking pattern by forming the correction layer on the light-blocking pattern in the corrected area further comprises forming the correction layer on a side of the light-blocking pattern in the corrected area.

16. The method of claim 9 , wherein the absorber layer and the correction layer comprise chromium (Cr), and/or
wherein the absorber layer comprises an alloy containing molybdenum (Mo) and silicon (Si), and the correction layer comprises an alloy containing molybdenum and silicon or silicon.

17. The method of claim 9 , wherein the light-blocking pattern protrudes from the substrate in a vertical direction, and
wherein removing the upper portion of the light-blocking pattern in the corrected area reduces a thickness of the light-blocking pattern in the corrected area in the vertical direction.

18. The method of claim 9 , wherein a lower portion of the light-blocking pattern in the corrected area remains after removing the upper portion of the light-blocking pattern in the corrected area.

19. The method of claim 9 , wherein forming the correction layer on the light-blocking pattern in the corrected area comprises:
providing a deposition gas on a top surface of the light-blocking pattern; and then
irradiating electronic beams (e-beams) onto the top surface of the light-blocking pattern in the corrected area to form the correction layer.

20. The method of claim 9 further comprising forming an anti-reflection coating (ARC) layer on the absorber layer before forming the light-blocking pattern,
wherein forming the light-blocking pattern comprises sequentially patterning the ARC layer and the absorber layer, and
wherein forming the correction layer on the light-blocking pattern in the corrected area comprises forming the correction layer on a top surface of the ARC layer in the corrected area.

Assignees

• Lee Jung-Hwan
• Kim Byung-Gook
• Lee Sang-Hyeon
• Samsung Electronics Co Ltd

Inventors

• Lee Jung-Hwan
• Kim Byung-Gook
• Lee Sang-Hyeon

Classifications

• G03F1/72

  Repair or correction of mask defects · CPC title

• G03F1/74 Primary

  by charged particle beam [CPB], e.g. focused ion beam · CPC title

• H10P76/204 Primary

  of organic photoresist masks · CPC title