Photomask, method of correcting error thereof, integrated circuit device manufactured by using the photomask, and method of manufacturing the integrated circuit device

Patent metadata

Field	Value
Publication number	US-2016377973-A1
Application number	US-201615258163-A
Country	US
Kind code	A1
Filing date	Sep 7, 2016
Priority date	Dec 9, 2013
Publication date	Dec 29, 2016
Grant date	—

Abstract

Provided are photomask and a method of correcting errors thereof. The photomask includes a multilayer reflection film covering one side surface of a substrate and an energy receiving layer covering the other side surface of the substrate. The method includes determining a local correction position on a frontside surface of the photomask according to a detected error of the photomask, and locally applying an energy beam to a backside surface region of the photomask aligned with the local correction position in a thickness direction of the photomask. The invention may be applicable to structures other than photomasks that benefit from modification of surface heights or selectively applied stress.

First claim

1 . A photolithographic mask comprising:
a substrate having a first surface and a second surface on an opposite side of the substrate from the first surface; a reflection film on the first surface of the substrate; a light absorber layer on the reflection film; and a stress inducing layer on the second surface of the substrate, the stress inducing layer configured to have selected locations alter a stress applied to the substrate to alter a shape of the photolithographic mask.

2 . The photolithographic mask of claim 1 , wherein the stress inducing layer comprises an amorphous material.

3 . The photolithographic mask of claim 2 , wherein the stress inducing layer comprises crystalline material.

4 . The photolithographic mask of claim 1 , wherein the stress inducing layer comprises a plurality of layers of a first material and a plurality of layers of a second material each interposed between corresponding ones of the plurality of layers of the first material.

5 . The photolithographic mask of claim 4 , wherein the first material comprises at least one of Al, Si and K.

6 . The photolithographic mask of claim 5 , wherein the second material comprises at least one of Nb, Mo, Ru and Pb.

7 . The photolithographic mask of claim 4 , wherein the first material comprises an amorphous portion and a crystalline portion.

8 . The photolithographic mask of claim 4 , wherein each layer of the plurality of layers of the first material comprise an amorphous portion and a crystalline portion.

9 . The photolithographic mask of claim 8 , wherein the crystalline portions of the plurality of layers of the first material provide stress to the substrate.

10 . The photolithographic mask of claim 9 , wherein each layer of the plurality of layers of the second material comprise an amorphous portion and a crystalline portion.

11 . The photolithographic mask of claim 1 , wherein the stress inducing layer comprises one or more depressions on a first surface, the one or more depressions corresponding to locations that induce stress on the substrate.

12 . The photolithographic mask of claim 1 ,
wherein the stress inducing layer comprises a first surface adjacent the second surface of the substrate and a second surface on an opposite side of the stress inducing layer from the first surface, wherein the one or more depressions are located on the second surface.

13 . The photolithographic mask of claim 12 , wherein the stress inducing layer comprises a first material having a crystalline state between each of the one or more depressions and the substrate and having an amorphous state at other locations.

14 . The photolithographic mask of claim 12 , wherein the stress inducing layer comprises a plurality of layers of a first material and a plurality of layers of a second material each interposed between corresponding ones of the plurality of layers of the first material.

15 . The photolithographic mask of claim 14 , wherein the first material and the second material have a crystalline state at locations between the one or more depressions and an amorphous state at other locations.

16 . The photolithographic mask of claim 1 , wherein the light absorbing layer is patterned to include openings to allow light to impinge on and reflect off of the reflection film.

17 . The photolithographic mask of claim 1 , wherein the stress inducing layer comprises a first material having a crystalline state and having an amorphous state at other locations

18 . The photolithographic mask of claim 17 , wherein the crystalline state of the first material exerts stress to the substrate.

19 - 49 . (canceled)

Assignees

• Samsung Electronics Co Ltd

Inventors

• Kim Sang-Hyun
• Kim Seong-Sue
• Lee Dong-Gun

Classifications

• H10P76/00 Primary

  Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography · CPC title

• G03F1/24 Primary

  Reflection masks; Preparation thereof · CPC title

• G03F1/38

  Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof · CPC title

• G03F1/72

  Repair or correction of mask defects · CPC title

• G03F1/74

  by charged particle beam [CPB], e.g. focused ion beam · CPC title