Pattern formation method, control device, and semiconductor device manufacture method

Patent metadata

Field	Value
Publication number	US-2016259240-A1
Application number	US-201514848075-A
Country	US
Kind code	A1
Filing date	Sep 8, 2015
Priority date	Mar 4, 2015
Publication date	Sep 8, 2016
Grant date	—

Abstract

In a pattern formation method according to an embodiment, a resist pattern is formed on a first film formed on a substrate. In the process for forming the resist pattern, the resist pattern includes a first pattern including a defect in a predetermined region on the first film. Next, a second film is accumulated on the first pattern in the predetermined region. Furthermore, a second pattern is formed in the first film with the resist pattern and the second film. Then, a third pattern is formed in the predetermined region on the first film.

First claim

What is claimed is:

1 . A pattern formation method comprising:
forming a resist pattern on a first film formed on a substrate, the resist pattern including a first pattern in a predetermined region on the first film, the first pattern including a pattern defect; accumulating a second film in the predetermined region on the first pattern; forming the first film into a second pattern in accordance with the resist pattern and the second film; and forming a third pattern in the predetermined region on the first film.

2 . The pattern formation method according to claim 1 , wherein the resist pattern includes a fourth pattern in a third region and the fourth pattern is formed by a film material having an amount larger than a desired amount; and
a position on which the second film is to be accumulated is set in accordance with a position and a size of the first pattern and a position and a size of the fourth pattern.

3 . The pattern formation method according to claim 1 , further comprising:
removing the resist pattern and the second film, wherein the third pattern is formed after the removal of the resist pattern and the second film.

4 . The pattern formation method according to claim 1 , further comprising:
etching a layer lower than the first film after the formation of the third pattern, using the first film as a hard mask after the formation of the third pattern.

5 . The pattern formation method according to claim 1 , wherein protectant is dropped on the predetermined region in an ink-jet manner, and the second film is accumulated by the dropping.

6 . The pattern formation method according to claim 1 , wherein a charged particle beam reacts with a process gas and the second film is accumulated on the first pattern by the reaction.

7 . The pattern formation method according to claim 1 , wherein the resist pattern includes a fourth pattern in a third region, and the fourth pattern is formed by a film material having an amount larger than a desired amount; and
the amount of the second film is set in accordance with a position and a size of the first pattern and a position and a size of the fourth pattern.

8 . The pattern formation method according to claim 1 , further comprising:
setting a center of an accumulation position of the second film at a position such that the first pattern is entirely covered and the resist pattern is covered as widely as possible, the accumulation position being a position on which the second film is to be accumulated.

9 . The pattern formation method according to claim 7 , further comprising:
setting a center of an accumulation position of the second film at a position such that the first pattern is entirely covered and the fourth pattern and the resist pattern are covered as widely as possible, the accumulation position being a position on which the second film is to be accumulated.

10 . The pattern formation method according to claim 5 , further comprising:
setting a position on which the second film is to be accumulated in accordance with a minimum size to which the protectant is accumulated in the ink-jet manner and a minimum size of a circular region necessary to encompass a defect part in the first pattern.

11 . The pattern formation method according to claim 3 , wherein the first film in the predetermined region is processed, and the third pattern is formed by the process.

12 . The pattern formation method according to claim 11 , wherein the third pattern is formed with a charged particle beam correction apparatus.

13 . The pattern formation method according to claim 5 , wherein the protectant is a resist.

14 . The pattern formation method according to claim 6 , wherein the second film is a metal film or a metal-oxide film.

15 . A control device comprising:
a defect region extraction unit that extracts first positional information indicating a position of a first pattern including a defect in a substrate pattern, the first pattern being formed on a first film on a substrate; a position setting unit that sets an accumulation position on which a second film is to be accumulated on the substrate in accordance with the first positional information; and an instruction output unit that outputs an instruction to accumulate the second film on the accumulation position.

16 . The control device according to claim 15 , wherein the defect region extraction unit further extracts second positional information indicating a position of a second pattern formed by a film material having an amount larger than a desired amount from the substrate pattern, and the position setting unit sets the accumulation position in accordance with a position and a size of the first pattern and a position and a size of the second pattern.

17 . The control device according to claim 15 , wherein the defect region extraction unit further extracts second positional information indicating a position of a second pattern formed by a film material having an amount larger than a desired amount from the substrate pattern, and the position setting unit sets an amount of the second film in accordance with a position and a size of the first pattern and a position and a size of the second pattern.

18 . The control device according to claim 15 , wherein the position setting unit sets a center of the accumulation position of the second film at a position such that the first pattern is entirely covered and the substrate pattern is covered as widely as possible.

19 . The control device according to claim 15 , wherein the position setting unit sets a center of the accumulation position of the second film at a position such that the first pattern is entirely covered and the second pattern and the substrate pattern are covered as widely as possible.

20 . A semiconductor device manufacture method, the method comprising:
forming a first resist pattern on a first film formed on a first substrate, the first resist pattern including a first pattern in a predetermined region on the first film, the first pattern including a pattern defect; accumulating a second film in the predetermined region on the first pattern; forming the first film into a second pattern in accordance with the resist pattern and the second film; forming a third pattern in the predetermined region on the first film; forming a second resist pattern on a third film formed on a second substrate with the first substrate, the first substrate on which the third pattern is formed; and forming a fourth pattern in the third film with the second resist pattern.

Assignees

• Toshiba Kk

Inventors

• Morishita Keiko
• Kanamitsu Shingo
• Sakurai Hideaki

Classifications

• G03F1/80

  Etching · CPC title

• G03F1/74

  by charged particle beam [CPB], e.g. focused ion beam · CPC title

• G03F1/72 Primary

  Repair or correction of mask defects · CPC title