Substrate processing apparatus, substrate processing method, fluid supplying method and storage medium

Patent metadata

Field	Value
Publication number	US-9662685-B2
Application number	US-201313910270-A
Country	US
Kind code	B2
Filing date	Jun 5, 2013
Priority date	Jun 8, 2012
Publication date	May 30, 2017
Grant date	May 30, 2017

Abstract

The present disclosure provides a substrate processing apparatus including: a processing chamber configured to process a substrate; a fluid supply source configured to supply a substrate processing fluid used in processing for the substrate in a predetermined pressure; a constant pressure supplying path configured to supply the substrate processing fluid from the fluid supply source to the processing chamber in a predetermined pressure without boosting the pressure of the substrate processing liquid; a boosted pressure supplying path configured to boost the pressure of the substrate processing fluid from the fluid supply source into a predetermined pressure by a booster mechanism and supply the pressure boosted substrate processing fluid to the processing chamber; and a control unit configured to switch over the constant pressure supplying path and the boosted pressure supplying path.

First claim

What is claimed is:

1. A substrate processing apparatus comprising:
a processing chamber configured to process a substrate by a supercritical fluid or a subcritical fluid;
a fluid supplying unit configured to supply a fluid to the processing chamber;
a fluid supplying path provided with a booster pump and a heating mechanism and configured to connect the fluid supplying unit with the processing chamber and allow the fluid to pass therein, a gas fluid supplied from the fluid supplying unit to pass the fluid supplying path being changed into one of a liquid fluid, the supercritical fluid and the subcritical fluid by the booster pump and the heating mechanism while passing through the fluid supplying path;
a first filter provided at a downstream side of the booster pump and the heating mechanism in the fluid supplying path and configured as a gas filter to collect particles within the gas fluid; and
a second filter provided at a downstream side of the first filter in the fluid supplying path and configured as a liquid filter to collect, in one of the liquid fluid, the supercritical fluid and the subcritical fluid, aggregated particles adsorbed to the first filter when the gas fluid passes through the first filter,
wherein a size of particles capable of passing through the second filter is smaller than a size of particles capable of passing through the first filter when compared by passing one of the liquid fluid, the supercritical fluid and the subcritical fluid through the first filter and the second filter.

2. The substrate processing apparatus of claim 1 , wherein when compared by passing the gas fluid through the first filter and the second filter, a size of particles adsorbed and collected by the first filter is equal to or less than a size of particles adsorbed and collected by the second filter.

3. The substrate processing apparatus of claim 1 , wherein the heating mechanism is configured to heat the inside of the fluid supplying path such that the fluid supplied to the processing chamber is directly changed from the gas fluid into the supercritical fluid or the subcritical fluid as the pressure within the fluid supplying path is increased.

4. The substrate processing apparatus of claim 1 , wherein the fluid passing the fluid supplying path is changed into the supercritical fluid or the subcritical fluid after going through the liquid fluid.

5. The substrate processing apparatus of claim 1 , wherein the fluid passing the fluid supplying path is made by evaporating the fluid supplied in one of the liquid fluid, the supercritical fluid and the subcritical fluid from the fluid supplying unit.

Assignees

• Tokyo Electron Ltd

Inventors

• Goshi Gentaro
• Mitsuoka Kazuyuki
• You Gen
• Ohno Hiroki
• Orii Takehiko
• Toshima Takayuki

Classifications

• H10P72/0434

  mainly by convection · CPC title

• H10P72/0414

  using mainly spraying means, e.g. nozzles · CPC title

• H10P72/0408 Primary

  for drying · CPC title

• H10P50/00 Primary

  Etching of wafers, substrates or parts of devices · CPC title

• H01L21/67034

  Electricity · mapped topic