Solid-state imaging device with channel stop region with multiple impurity regions in depth direction and method for manufacturing the same
US-9799691-B2 · Oct 24, 2017 · US
Imaging device and electronic apparatus
US9659994B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9659994-B2 |
| Application number | US-201615148127-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 6, 2016 |
| Priority date | Jan 21, 2014 |
| Publication date | May 23, 2017 |
| Grant date | May 23, 2017 |
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Abstract
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An imaging device includes: a photoelectric conversion region that generates photovoltaic power for each pixel depending on irradiation light; and a first element isolation region that is provided between adjacent photoelectric conversion regions in a state of surrounding the photoelectric conversion region.
First claim
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What is claimed is: 1. An imaging device comprising: a plurality of photoelectric conversion regions that each generate photovoltaic power for a corresponding pixel of the imaging device depending on irradiation light; and a first element isolation region that is provided between adjacent first and second photoelectric conversion regions included in the plurality of photoelectric conversion regions, wherein the first element isolation region surrounds at least one of the first and second photoelectric conversion regions, and wherein a photovoltaic type pixel and an accumulation type pixel are formed in the adjacent photoelectric conversion regions. 2. The imaging device according to claim 1 , further comprising: a second element isolation region that is provided between at least one of the photoelectric conversion regions and a pixel circuit region. 3. The imaging device according to claim 2 , wherein the first and second element isolation regions are configured of a material that blocks a diffusion current. 4. The imaging device according to claim 2 , wherein a PN junction diode is formed in at least some of the photoelectric conversion regions as a photo-sensor. 5. The imaging device according to claim 4 , wherein a transfer gate and a floating diffusion are further formed in at least some of the photoelectric conversion regions. 6. An imaging device comprising: a photoelectric conversion region that generates photovoltaic power for each pixel depending on irradiation light, wherein a PN junction diode is formed in the photoelectric conversion region as a photo-sensor, and wherein a transfer gate and a floating diffusion are further formed in the photoelectric conversion region; a first element isolation region that is provided between adjacent first and second photoelectric conversion regions, wherein the first element isolation region surrounds at least one of the first and second photoelectric conversion regions, wherein a photovoltaic type pixel and an accumulation type pixel are formed in the adjacent photoelectric conversion regions; and a second element isolation region that is provided between the photoelectric conversion region and a pixel circuit region. 7. An electronic apparatus equipped with an imaging device, wherein the imaging device includes: a photoelectric conversion region that generates photovoltaic power for each pixel depending on irradiation light, wherein a PN junction diode is formed in the photoelectric conversion region as a photo-sensor, and wherein a transfer gate and a floating diffusion are further formed in the photoelectric conversion region; a first element isolation region that is provided between adjacent first and second photoelectric conversion regions, wherein the first element isolation region surrounds at least one of the first and second photoelectric conversion-regions, wherein a photovoltaic type pixel and an accumulation type pixel are formed in the adjacent photoelectric conversion regions; and a second element isolation region that is provided between the photoelectric conversion region and a pixel circuit region. 8. The electronic apparatus equipped with an imaging device of claim 7 , wherein the first and second element isolation regions are configured of a material that blocks a diffusion current.
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Classifications
Electricity · mapped topic
Electricity · mapped topic
- H01L27/14887Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9659994B2 cover?
- An imaging device includes: a photoelectric conversion region that generates photovoltaic power for each pixel depending on irradiation light; and a first element isolation region that is provided between adjacent photoelectric conversion regions in a state of surrounding the photoelectric conversion region.
- Who is the assignee on this patent?
- Sony Corp, Sony Semiconductor Solutions Corp
- What technology area does this patent fall under?
- Primary CPC classification H01L27/14887. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue May 23 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).