Method for producing an electrical component, and electrical component

Patent metadata

Field	Value
Publication number	US-9230719-B2
Application number	US-201214235776-A
Country	US
Kind code	B2
Filing date	Jul 26, 2012
Priority date	Jul 29, 2011
Publication date	Jan 5, 2016
Grant date	Jan 5, 2016

Abstract

A method for producing an electrical component, comprises providing a ceramic semiconducting base body ( 10 ) having a surface (O 10 ) and a first side area (S 10 a ) lying opposite the surface (O 10 ), wherein a metallic layer ( 40 ) is contained within the base body. After at least two further metallic layers ( 210 ) have been arranged separately from one another on the side area (S 10 a ) of the base body, the arrangement is sintered. An electrically insulating layer ( 30 ) is arranged between the at least two further metallic layers ( 210 ). A respective contact layer ( 220 ) is arranged on the metallic layers ( 210 ) by means of a chemical process. In this case, the material of the base body ( 10 ) is removed proceeding from the surface (O 10 ) of the base body ( 10 ) at most as far as the metallic layer ( 40 ) arranged within the base body.

First claim

The invention claimed is:

1. A method for producing an electrical component, comprising:
providing a ceramic semiconducting base body ( 10 ) having a surface (O 10 ) and a first side area (S 10 a ) lying opposite the surface (O 10 ), wherein a metallic layer ( 40 ) is contained within the base body,
arranging at least two further metallic layers ( 210 ) separately from one another on the side area (S 10 a ) of the base body,
sintering the arrangement composed of the base body ( 10 ) and the further metallic layers ( 210 ),
arranging an electrically insulating layer ( 30 ) on the first side area (S 10 a ) between the at least two further metallic layers ( 210 ),
arranging a respective contact layer ( 220 ) on the at least two further metallic layers ( 210 ) by means of a chemical process, wherein the material of the base body ( 10 ) is removed by the chemical process proceeding from the surface (O 10 ) of the base body ( 10 ) at most as far as the metallic layer ( 40 ) arranged within the base body.

2. The method according to claim 1 ,
wherein the metallic layer ( 40 ) arranged within the base body ( 10 ) is interrupted at least two locations (U 1 , U 2 ),
wherein the at least two further metallic layers ( 210 ) are arranged on the first side area (S 10 a ) of the base body ( 10 ) in such a way that a first and second region (B 1 , B 2 ) of the first side area (S 10 a ) of the base body are not covered by the at least two further metallic layers ( 210 ),
wherein the material of the base body ( 10 ) is etched at the regions (B 1 , B 2 ) of the first side area (S 10 a ) of the base body ( 10 ) by the chemical process.

3. The method according to claim 2 , wherein the electrical component ( 1 , 2 , 3 ) is singulated from the material of the base body ( 10 ) by an etching process succeeding the chemical process.

4. The method according to any of claims 1 to 3 , wherein the material of the base body is prevented from being etched at a region (B 0 ) of the base body ( 10 ) which is covered by the at least two further metallic layers ( 210 ) and by the electrically insulating layer ( 30 ).

5. The method according to claim 4 , wherein the metallic layer ( 40 ) is arranged within the base body in such a way that the electrical component ( 1 , 2 , 3 ) between the metallic layer ( 40 ) arranged within the base body ( 10 ) and the contact layers ( 220 ) has a thickness of at most 150 μm and preferably of 50 μm.

6. The method according to claim 1 , wherein the ceramic semiconducting base body ( 10 ) contains a material composed of zinc oxide and praseodymium or a material having a negative temperature coefficient.

7. The method according to claim 1 , wherein the electrically insulating layer ( 30 ) contains a material composed of glass or silicon nitride or silicon carbide or aluminium oxide or a polymer and the metallic layer ( 40 ) and the further metallic layers ( 210 ) contain a material composed of silver.

8. The method according to claim 1 , wherein the contact layer ( 220 ) contains a material composed of nickel and/or gold and/or palladium and/or tin and/or silver.

9. An electrical component, comprising:
a ceramic semiconducting base body ( 10 ) having a first side area (S 10 a ), on which at least two contacts ( 21 , 22 ) spaced apart from one another are arranged, and a second side area (S 10 b ), which lies opposite the first side area (S 10 a ) and on which a metallic layer ( 40 ) is arranged,
wherein each of the contacts ( 21 , 22 ) has a further metallic layer ( 210 ), which is arranged on the first side area (S 10 a ) of the base body, and a contact layer ( 220 ), which is arranged on the further metallic layer ( 210 ),
wherein an electrically insulating layer ( 30 ) is arranged between the at least two contacts ( 21 , 22 ), the at least two contacts ( 21 , 22 ) being electrically insulated from one another by said electrically insulating layer,
wherein the electrical component between the metallic layer ( 40 ) and the respective contact layer ( 210 ) of the contacts ( 21 , 22 ) has a component height (H) of at most 150 μm and preferably of 50 μm, and
wherein the metallic layer ( 40 ) is thinner than the ceramic semiconducting base body ( 10 ).

10. An electrical component, comprising:
a ceramic semiconducting base body ( 10 ) having a surface (O 10 ) and a first side area (S 10 a ), which lies opposite the surface (O 10 ) and on which at least two contacts ( 21 , 22 ) spaced apart from one another are arranged,
wherein a metallic layer ( 40 ) is arranged within the base body ( 10 ),
wherein each of the contacts ( 21 , 22 ) has a further metallic layer ( 210 ), which is arranged on the first side area (S 10 a ) of the base body, and a contact layer ( 220 ), which is arranged on the further metallic layer ( 210 ),
wherein an electrically insulating layer ( 30 ) is arranged between the at least two contacts ( 21 , 22 ), the at least two contacts ( 21 , 22 ) being electrically insulated from one another by said electrically insulating layer,
wherein the electrical component between the surface (O 10 ) and the respective contact layer ( 210 ) of the contacts ( 21 , 22 ) has a component height (H) of at most 150 μm and preferably of 50 μm.

11. The electrical component according to claim 9 or 10 , wherein the ceramic semiconducting base body ( 10 ) contains a material composed of zinc oxide and praseodymium or a material having a negative temperature coefficient.

12. The electrical component according to claim 9 or 10 , wherein the electrically insulating layer ( 30 ) is arranged on the first side area (S 10 a ) of the base body ( 10 ).

13. The electrical component according to claim 9 or 10 , wherein the electrically insulating layer ( 30 ) contains a material composed of glass or silicon nitride or silicon carbide or aluminium oxide or a polymer.

14. The electrical component according to claim 9 or 10 , wherein at least one of the metallic and of the further metallic layers ( 40 , 210 ) contains a material composed of silver.

15. The electrical component according to claim 9 or 10 , wherein the contact layer ( 220 ) contains a material composed of nickel and/or gold and/or palladium and/or tin and/or silver.

Assignees

• Feichtinger Thomas
• Brunner Sebastian
• Epcos Ag

Inventors

• Feichtinger Thomas
• Brunner Sebastian

Classifications

• H01C7/041 Primary

  formed with two or more layers · CPC title

• H01C17/00

  Apparatus or processes specially adapted for manufacturing resistors (providing fillings for housings or enclosures H01C1/02; reducing insulation surrounding a resistor to powder H01C1/03; manufacture of thermally variable resistors H01C7/02, H01C7/04) · CPC title

• H01C7/18

  comprising a plurality of layers stacked between terminals · CPC title

• H01C7/008 Primary

  Thermistors (H01C7/02 - H01C7/06 take precedence) · CPC title

• Y10T29/49085

  Thermally variable · CPC title