Metal nitride material for thermistor, method for producing same, and film type thermistor sensor
US-9534961-B2 · Jan 3, 2017 · US
Metal nitride material for thermistor, method for producing same, and film-type thermistor sensor
US2016189831A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016189831-A1 |
| Application number | US-201414906913-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jul 24, 2014 |
| Priority date | Jul 25, 2013 |
| Publication date | Jun 30, 2016 |
| Grant date | — |
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Abstract
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A metal nitride material for a thermistor consists of a metal nitride represented by the general formula: M x Al y N z (where “M” represents at least one of Fe, Co, Mn, Cu, and Ni, 0.70≦y/(x+y)≦0.98, 0.4≦z≦0.5, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase. A method for producing the metal nitride material for a thermistor includes a deposition step of performing film deposition by reactive sputtering in a nitrogen-containing atmosphere using an M-Al alloy sputtering target (where “M” represents at least one of Fe, Co, Mn, Cu, and Ni).
First claim
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1 . A metal nitride material for a thermistor, consisting of a metal nitride represented by the general formula: M x Al y N z (where “M” represents at least one of Fe, Co, Mn, Cu, and Ni, 0.70≦y/(x+y)≦0.98, 0.4≦z≦0.5, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase. 2 . The metal nitride material for a thermistor according to claim 1 , wherein the metal nitride material is deposited as a film and is a columnar crystal extending in a vertical direction with respect to the surface of the film. 3 . A film-type thermistor sensor comprising: an insulating film; a thin film thermistor portion made of the metal nitride material for a thermistor according to claim 1 formed on the insulating film; and a pair of pattern electrodes formed at least on the top or the bottom of the thin film thermistor portion. 4 . A method for producing the metal nitride material for a thermistor according to claim 1 , the method comprising a deposition step of performing film deposition by reactive sputtering in a nitrogen-containing atmosphere using an M-Al alloy sputtering target (where “M” represents at least one of Fe, Co, Mn, Cu, and Ni). 5 . The method for producing the metal nitride material for a thermistor according to claim 4 , the method comprising a step of irradiating the deposited film with nitrogen plasma after the deposition step. 6 . A film-type thermistor sensor comprising: an insulating film; a thin film thermistor portion made of the metal nitride material for a thermistor according to claim 2 formed on the insulating film; and a pair of pattern electrodes formed at least on the top or the bottom of the thin film thermistor portion. 7 . A method for producing the metal nitride material for a thermistor according to claim 2 , the method comprising a deposition step of performing film deposition by reactive sputtering in a nitrogen-containing atmosphere using an M-Al alloy sputtering target (where “M” represents at least one of Fe, Co, Mn, Cu, and Ni).
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Inventors
Classifications
- H01C7/008Primary
Thermistors (H01C7/02 - H01C7/06 take precedence) · CPC title
characterised by the shape of the resistive element · CPC title
Nitrides (C23C14/0617 takes precedence) · CPC title
Reactive sputtering · CPC title
Treatment with charged particles (C23C14/582 takes precedence) · CPC title
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- What does patent US2016189831A1 cover?
- A metal nitride material for a thermistor consists of a metal nitride represented by the general formula: M x Al y N z (where “M” represents at least one of Fe, Co, Mn, Cu, and Ni, 0.70≦y/(x+y)≦0.98, 0.4≦z≦0.5, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase. A method for producing the metal nitride material for a thermistor includes a deposition s…
- Who is the assignee on this patent?
- Mitsubishi Materials Corp
- What technology area does this patent fall under?
- Primary CPC classification H01C7/008. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Jun 30 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).