Metal nitride material for thermistor, method for producing same, and film type thermistor sensor

Patent metadata

Field	Value
Publication number	US-2016223407-A1
Application number	US-201414915399-A
Country	US
Kind code	A1
Filing date	Aug 15, 2014
Priority date	Aug 30, 2013
Publication date	Aug 4, 2016
Grant date	—

Abstract

A metal nitride material for a thermistor consists of a metal nitride represented by the general formula: M x (Al 1-v Si v ) y (N 1-w O w ) z (where “M” represents at least one of Ti, V, Cr, Mn, Fe, and Co, 0.0<v<0.3, 0.70≦y/(x+y)≦0.98, 0.45≦z≦0.55, 0<w≦0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase. A method for producing the metal nitride material for a thermistor includes a deposition step of performing film deposition by reactive sputtering in a nitrogen and oxygen-containing atmosphere using an M-Al—Si alloy sputtering target (where “M” represents at least one of Ti, V, Cr, Mn, Fe, and Co).

First claim

1 . A metal nitride material for a thermistor, consisting of a metal nitride represented by the general formula: M x (Al 1-v Si v ) y (N 1-w O w ) z (where “M” represents at least one of Ti, V, Cr, Mn, Fe, and Co, 0.0<v<0.3, 0.70≦y/(x+y)≦0.98, 0.45≦z≦0.55, 0<w≦0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase.

2 . The metal nitride material for a thermistor according to claim 1 , wherein the metal nitride material is deposited as a film and is a columnar crystal extending in a vertical direction with respect to the surface of the film.

3 . The metal nitride material for a thermistor according to claim 1 , wherein the metal nitride material is deposited as a film and is more strongly oriented along the c-axis than the a-axis in a vertical direction with respect to the surface of the film.

4 . A film type thermistor sensor comprising:
an insulating film; a thin film thermistor portion made of the metal nitride material for a thermistor according to claim 1 formed on the insulating film; and a pair of pattern electrodes formed at least on the top or the bottom of the thin film thermistor portion.

5 . A method for producing the metal nitride material for a thermistor according to claim 1 , the method comprising a deposition step of performing film deposition by reactive sputtering in a nitrogen and oxygen-containing atmosphere using an M-Al—Si alloy sputtering target (where “M” represents at least one of Ti, V, Cr, Mn, Fe, and Co).

6 . The method for producing the metal nitride material for a thermistor according to claim 5 , wherein the sputtering gas pressure during the reactive sputtering is set to less than 0.67 Pa.

7 . The metal nitride material for a thermistor according to claim 2 , wherein the metal nitride material is deposited as a film and is more strongly oriented along the c-axis than the a-axis in a vertical direction with respect to the surface of the film.

8 . A film type thermistor sensor comprising:
an insulating film; a thin film thermistor portion made of the metal nitride material for a thermistor according to claim 2 formed on the insulating film; and a pair of pattern electrodes formed at least on the top or the bottom of the thin film thermistor portion.

9 . A film type thermistor sensor comprising:
an insulating film; a thin film thermistor portion made of the metal nitride material for a thermistor according to claim 3 formed on the insulating film; and a pair of pattern electrodes formed at least on the top or the bottom of the thin film thermistor portion.

10 . A film type thermistor sensor comprising:
an insulating film; a thin film thermistor portion made of the metal nitride material for a thermistor according to claim 7 formed on the insulating film; and a pair of pattern electrodes formed at least on the top or the bottom of the thin film thermistor portion.

11 . A method for producing the metal nitride material for a thermistor according to claim 2 , the method comprising a deposition step of performing film deposition by reactive sputtering in a nitrogen and oxygen-containing atmosphere using an M-Al—Si alloy sputtering target (where “M” represents at least one of Ti, V, Cr, Mn, Fe, and Co).

12 . A method for producing the metal nitride material for a thermistor according to claim 3 , the method comprising a deposition step of performing film deposition by reactive sputtering in a nitrogen and oxygen-containing atmosphere using an M-Al—Si alloy sputtering target (where “M” represents at least one of Ti, V, Cr, Mn, Fe, and Co).

13 . A method for producing the metal nitride material for a thermistor according to claim 7 , the method comprising a deposition step of performing film deposition by reactive sputtering in a nitrogen and oxygen-containing atmosphere using an M-Al—Si alloy sputtering target (where “M” represents at least one of Ti, V, Cr, Mn, Fe, and Co).

14 . The method for producing the metal nitride material for a thermistor according to claim 11 , wherein the sputtering gas pressure during the reactive sputtering is set to less than 0.67 Pa.

15 . The method for producing the metal nitride material for a thermistor according to claim 12 , wherein the sputtering gas pressure during the reactive sputtering is set to less than 0.67 Pa.

16 . The method for producing the metal nitride material for a thermistor according to claim 13 , wherein the sputtering gas pressure during the reactive sputtering is set to less than 0.67 Pa.

Assignees

• Mitsubishi Materials Corp

Inventors

• Fujita Toshiaki
• Tanaka Hiroshi
• Nagatomo Noriaki

Classifications

• G01K7/223 Primary

  characterised by the shape of the resistive element · CPC title

• H01C17/12 Primary

  by sputtering · CPC title

• H01C7/042

  mainly consisting of inorganic non-metallic substances (H01C7/041 takes precedence) · CPC title

• H01C7/006

  Thin film resistors · CPC title

• H01B1/06

  mainly consisting of other non-metallic substances · CPC title