Metal nitride material for thermistor, method for producing same, and film type thermistor sensor
US-9625326-B2 · Apr 18, 2017 · US
US2016187205A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016187205-A1 |
| Application number | US-201414906923-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jul 24, 2014 |
| Priority date | Jul 25, 2013 |
| Publication date | Jun 30, 2016 |
| Grant date | — |
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A metal nitride material for a thermistor consists of a metal nitride represented by the general formula: M x Al y (N 1-w O w ) z (where “M” represents at least one of Fe, Co, Mn, Cu, and Ni, 0.70≦y/(x+y)≦0.98, 0.45≦z≦0.55, 0<w≦0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase. A method for producing the metal nitride material for a thermistor includes a deposition step of performing film deposition by reactive sputtering in a nitrogen and oxygen-containing atmosphere using an M-Al alloy sputtering target (where “M” represents at least one of Fe, Co, Mn, Cu, and Ni).
Opening claim text (preview).
1 . A metal nitride material for a thermistor, consisting of a metal nitride represented by the general formula: M x Al y (N 1-w O w ) z (where “M” represents at least one of Fe, Co, Mn, Cu, and Ni, 0.70≦y/(x+y)≦0.98, 0.45≦z≦0.55, 0<w≦0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase. 2 . The metal nitride material for a thermistor according to claim 1 , wherein the metal nitride material is deposited as a film and is a columnar crystal extending in a vertical direction with respect to the surface of the film. 3 . A film-type thermistor sensor comprising: an insulating film; a thin film thermistor portion made of the metal nitride material for a thermistor according to claim 1 formed on the insulating film; and a pair of pattern electrodes formed at least on the top or the bottom of the thin film thermistor portion. 4 . A method for producing the metal nitride material for a thermistor according to claim 1 , the method comprising a deposition step of performing film deposition by reactive sputtering in a nitrogen and oxygen-containing atmosphere using an M-Al alloy sputtering target (where “M” represents at least one of Fe, Co, Mn, Cu, and Ni). 5 . A film-type thermistor sensor comprising: an insulating film; a thin film thermistor portion made of the metal nitride material for a thermistor according to claim 2 formed on the insulating film; and a pair of pattern electrodes formed at least on the top or the bottom of the thin film thermistor portion. 6 . A method for producing the metal nitride material for a thermistor according to claim 2 , the method comprising a deposition step of performing film deposition by reactive sputtering in a nitrogen and oxygen-containing atmosphere using an M-Al alloy sputtering target (where “M” represents at least one of Fe, Co, Mn, Cu, and Ni).
Treatment with charged particles (C23C14/582 takes precedence) · CPC title
Oxynitrides · CPC title
at an oxygen percentage below that of air · CPC title
by d-values or two theta-values, e.g. as X-ray diagram · CPC title
Copper · CPC title
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