Patterning a substrate using a multi-patterning technique

Patent metadata

Field	Value
Publication number	US-2025306463-A1
Application number	US-202418617026-A
Country	US
Kind code	A1
Filing date	Mar 26, 2024
Priority date	Mar 26, 2024
Publication date	Oct 2, 2025
Grant date	—

Abstract

A method for patterning a substrate, the method includes forming a first mask over the substrate, the first mask including first features and first spaces and exposing the substrate at a bottom of each first space; forming a second mask while retaining the first features, the second mask including second features and second spaces, the second features covering a portion of the substrate exposed by the first spaces; and either selectively depositing on or selectively removing material from the second features relative to the first features to change a width of each of the second features.

First claim

What is claimed is:

1 . A method for patterning a substrate, the method comprising:
forming a first mask over the substrate, the first mask comprising first features and first spaces and exposing the substrate at a bottom of each first space; forming a second mask while retaining the first features, the second mask comprising second features and second spaces, the second features covering a portion of the substrate exposed by the first spaces; and either selectively depositing on or selectively removing material from the second features relative to the first features to change a width of each of the second features.

2 . The method of claim 1 , further comprising:
after changing the widths of the second features, etching openings in the substrate using a combined mask comprising the first and the second masks as an etch mask.

3 . The method of claim 1 , wherein forming the first mask comprises forming the first features, the first features comprising a first resist different from a second mask material of the second mask.

4 . The method of claim 1 , wherein forming the first mask comprises forming the first features, the first features comprising a hardmask different from a second mask material of the second mask.

5 . The method of claim 1 , wherein forming the first mask comprises forming the first features by performing an anti-spacer patterning process, each first feature being either a mandrel feature or a filler feature.

6 . The method of claim 1 , further comprising:
after forming the first mask and prior to forming a coating of a second mask material, performing a freezing process to protect the first mask from being damaged by the patterning the coating of the second mask material, the freezing process comprising: treating the first features with a flux of electrons; or depositing a freezing agent on the first features, the freezing agent comprising silicon or a resin comprising a cross-linker.

7 . The method of claim 1 , wherein forming the second mask while retaining the first features comprises coating a second mask material without an intervening freeze process.

8 . The method of claim 7 , wherein the first mask is coated from propylene glycol methyl ether acetate (PGMEA) and the second mask is coated from methyl isobutyl carbinol (MIBC).

9 . The method of claim 1 , wherein changing the width comprises increasing the width by performing an area selective deposition process configured to selectively deposit material on the second features relative to the first features and the substrate.

10 . The method of claim 1 , wherein changing the width comprises reducing the width by performing a selective etch process configured to selectively remove material from the second features relative to the first features and the substrate.

11 . A method for patterning a substrate, the method comprising:
forming a first mask over the substrate, the first mask comprising first features and first spaces, the first mask exposing the substrate at a bottom of each first space; forming a second mask while retaining the first features, the second mask comprising second features and second spaces, the second features covering a portion of the substrate exposed by the first spaces; and either selectively depositing on or selectively removing material from the first features relative to the second features to change a width of a portion of each of the first features exposed after forming the second mask.

12 . The method of claim 11 , wherein the first features comprise a first mask material and the second features comprise a second mask material, the first mask material being different from the second mask material.

13 . The method of claim 11 , wherein changing the width comprises increasing the width by performing an area selective deposition process configured to selectively deposit material on the portion of the first features exposed after forming the second mask relative to the second features and the substrate.

14 . The method of claim 11 , wherein changing the width comprises reducing the width by performing a selective etch process configured to selectively remove material from the portion of the first features exposed after forming the second mask relative to the second features and the substrate.

15 . The method of claim 11 , further comprising:
after changing the width of the portion of the first features exposed after forming the second mask, etching openings in the substrate using a combined mask as an etch mask, the combined mask comprising through openings, wherein each through opening is a region common to the first spaces and the second spaces.

16 . A method for patterning a substrate, the method comprising:
forming a first mask over the substrate, the first mask comprising first features and first spaces, the first mask exposing the substrate at a bottom of each first space; forming a second mask over the first features, the second mask comprising second features covering a portion of the substrate exposed by the first spaces; forming a third mask while retaining the first features and the second features, the third mask comprising third spaces and exposing portions of the first features and portions of the second features; and selectively changing either widths of the exposed portions of the first features or the second features relative to the third mask.

17 . The method of claim 16 , wherein the first features comprise a first mask material, the second lines comprise a second mask material, the third features comprise a third mask material, wherein at least one of the mask materials is different from the others.

18 . The method of claim 16 , wherein selectively changing either widths of the exposed portions of the first features or the second features relative to the third mask comprises increasing the width by performing an area selective deposition process.

19 . The method of claim 16 , wherein selectively changing either widths of the exposed portions of the first features or the second features relative to the third mask comprises reducing the width by performing an area selective etch process.

20 . The method of claim 16 , further comprising:
after changing either widths of the exposed portions of the first features or the second features, selectively removing the third mask while retaining the first mask and the second mask; and etching openings in the substrate using a combined mask comprising the first and the second masks as an etch mask.

Assignees

• Tokyo Electron Ltd

Inventors

• Grzeskowiak Steven
• Grzeskowiak Jodi
• Conklin David
• Murphy Michael
• Power David
• Devilliers Anton
• Liu Eric Chih-Fang
• Lutker-Lee Katie

Classifications

• H10P76/4085

  characterised by the processes involved to create the masks · CPC title

• H10P50/73

  using masks for insulating materials · CPC title

• G03F7/40

  Treatment after imagewise removal, e.g. baking · CPC title

• G03F7/0002

  Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping · CPC title

• G03F7/094 Primary

  Multilayer resist systems, e.g. planarising layers · CPC title