Substrate liquid processing method, substrate liquid processing apparatus, and computer-readable recording medium

Patent metadata

Field	Value
Publication number	US-2022290302-A1
Application number	US-202017753264-A
Country	US
Kind code	A1
Filing date	Aug 14, 2020
Priority date	Aug 27, 2019
Publication date	Sep 15, 2022
Grant date	—

Abstract

A substrate liquid processing method includes preparing a substrate having a surface including a recess on which a seed layer is stacked; supplying an electroless plating liquid onto the surface of the substrate to fill the recess with the electroless plating liquid while forming a liquid film of the electroless plating liquid on the surface; and adjusting a temperature of the liquid film from a first temperature at which a metal is precipitated on the seed layer to a second temperature lower than the first temperature to fill the recess with the metal starting from a bottom portion of the recess such that a void is not formed therein.

First claim

1 . A substrate liquid processing method, comprising:
preparing a substrate having a surface including a recess on which a seed layer is stacked; supplying an electroless plating liquid onto the surface of the substrate to fill the recess with the electroless plating liquid while forming a liquid film of the electroless plating liquid on the surface; and adjusting a temperature of the liquid film from a first temperature at which a metal is precipitated on the seed layer to a second temperature lower than the first temperature to fill the recess with the metal starting from a bottom portion of the recess such that a void is not formed therein.

2 . The substrate liquid processing method of claim 1 ,
wherein the second temperature is a room temperature.

3 . The substrate liquid processing method of claim 1 ,
wherein the liquid film is adjusted to the second temperature before an opening portion of the recess is closed by the metal precipitated thereat.

4 . The substrate liquid processing method of claim 1 , further comprising:
heating, after the adjusting of the temperature of the liquid film to the second temperature, the liquid film to a third temperature which is higher than the second temperature and at which the metal is precipitated.

5 . The substrate liquid processing method of claim 1 ,
wherein increasing the temperature of the liquid film to accelerate precipitation of the metal and decreasing the temperature of the liquid film are repeated alternately.

6 . The substrate liquid processing method of claim 4 ,
wherein the liquid film having the second temperature dissolves and reduces the metal at least in an opening portion of the recess.

7 . The substrate liquid processing method of claim 1 ,
wherein the liquid film is heated as a cover member having a heater is placed above the surface of the substrate, and the temperature of the liquid film is adjusted as a distance between the surface of the substrate and the heater is changed.

8 . The substrate liquid processing method of claim 7 ,
wherein, in the adjusting of the temperature of the liquid film to the second temperature, a gas is supplied into a gap between the surface of the substrate and the cover member.

9 . The substrate liquid processing method of claim 1 ,
wherein, in the adjusting of the temperature of the liquid film to the second temperature, the electroless plating liquid having a temperature lower than the first temperature is supplied onto the surface of the substrate.

10 . A substrate liquid processing apparatus, comprising:
a plating liquid supply configured to supply an electroless plating liquid onto a surface of a substrate including a recess on which a seed layer is stacked, to fill the recess with the electroless plating liquid while forming a liquid film of the electroless plating liquid on the surface; a temperature adjusting unit configured to adjust a temperature of the liquid film; and a controller configured to control the temperature adjusting unit, wherein the controller controls the temperature adjusting unit to adjust the temperature of the liquid film from a first temperature at which a metal is precipitated on the seed layer to a second temperature lower than the first temperature to fill the recess with the metal starting from a bottom portion of the recess such that a void is not formed therein.

11 . A computer-readable recording medium having stored thereon computer-executable instructions that, in response to execution, cause an apparatus to perform a substrate liquid processing method comprising:
preparing a substrate having a surface including a recess on which a seed layer is stacked; supplying an electroless plating liquid onto the surface of the substrate to fill the recess with the electroless plating liquid while forming a liquid film of the electroless plating liquid on the surface; and adjusting a temperature of the liquid film from a first temperature at which a metal is precipitated on the seed layer to a second temperature lower than the first temperature to fill the recess with the metal starting from a bottom portion of the recess such that a void is not formed therein.

Assignees

• Tokyo Electron Ltd

Inventors

• IWAI Kazutoshi
• Inatomi Yuichiro
• Niwa Takafumi

Classifications

• H10W20/057

  by selectively depositing, e.g. by using selective CVD or plating · CPC title

• H10P14/46

  using a liquid · CPC title

• C23C18/1628

  Specific elements or parts of the apparatus · CPC title

• C23C18/36

  using hypophosphites · CPC title

• C23C18/40

  using reducing agents · CPC title