Substrate liquid processing apparatus, substrate liquid processing method and recording medium

Patent metadata

Field	Value
Publication number	US-2018002811-A1
Application number	US-201715633910-A
Country	US
Kind code	A1
Filing date	Jun 27, 2017
Priority date	Jul 1, 2016
Publication date	Jan 4, 2018
Grant date	—

Abstract

A substrate liquid processing apparatus 1 includes a substrate holding unit 52 configured to hold a substrate W; a processing liquid supply unit 53 configured to supply a processing liquid L 1 onto a top surface of the substrate W held by the substrate holding unit 52; and a cover body 6 configured to cover the substrate W. Here, the cover body 6 includes a ceiling unit 61 disposed above the substrate W, a sidewall unit 62 downwardly extended from the ceiling unit 61, and a heating unit 63 provided at the ceiling unit 61 and configured to heat the processing liquid L 1 on the substrate W. The sidewall unit 62 of the cover body 6 is placed at an outer periphery side of the substrate W when the processing liquid L 1 on the substrate W is heated.

First claim

We claim:

1 . A substrate liquid processing apparatus configured to perform a liquid processing on a substrate by supplying a processing liquid onto the substrate, the substrate liquid processing apparatus comprising:
a substrate holding unit configured to hold the substrate; a processing liquid supply unit configured to supply the processing liquid onto a top surface of the substrate held by the substrate holding unit; and a cover body configured to cover the substrate held by the substrate holding unit, wherein the cover body comprises a ceiling unit disposed above the substrate, a sidewall unit downwardly extended from the ceiling unit, and a heating unit provided at the ceiling unit and configured to heat the processing liquid on the substrate, and the sidewall unit of the cover body is placed at an outer periphery side of the substrate when the processing liquid on the substrate is heated.

2 . The substrate liquid processing apparatus of claim 1 ,
wherein a lower end of the sidewall unit is located at a position lower than the substrate when the processing liquid on the substrate is heated.

3 . The substrate liquid processing apparatus of claim 1 , further comprising:
a gap adjusting unit configured to adjust a gap between the ceiling unit and the substrate on which the processing liquid is supplied, wherein the gap adjusting unit is configured to adjust the gap to a first gap and to a second gap larger than the first gap when the processing liquid on the substrate is heated.

4 . The substrate liquid processing apparatus of claim 3 ,
wherein a lower end of the sidewall unit is located at a position lower than the substrate when the gap is set to the second gap.

5 . The substrate liquid processing apparatus of claim 1 ,
wherein the ceiling unit comprises a first ceiling plate and a second ceiling plate provided on the first ceiling plate, and the heating unit is embedded between the first ceiling plate and the second ceiling plate.

6 . The substrate liquid processing apparatus of claim 1 ,
wherein the heating unit comprises an inner heating unit, an outer heating unit provided at an outer periphery side than the inner heating unit, and an intermediate heating unit provided between the inner heating unit and the outer heating unit, and a calorific power per unit area of at least one of the inner heating unit and the outer heating unit is larger than a calorific power per unit area of the intermediate heating unit.

7 . The substrate liquid processing apparatus of claim 1 ,
wherein the cover body further comprises a cover body cover configured to cover the ceiling unit and the sidewall unit, and the cover body cover has higher heat insulation property than the ceiling unit and the sidewall unit.

8 . The substrate liquid processing apparatus of claim 1 , further comprising:
an inert gas supply unit configured to supply an inert gas to an inside of the cover body.

9 . The substrate liquid processing apparatus of claim 1 , further comprising:
a gas supply unit configured to supply a gas to a vicinity of the cover body, wherein a supply amount of the gas from the gas supply unit at a time when the processing liquid on the substrate is heated by the heating unit is set to be smaller than a supply amount of the gas at a time when the processing liquid is supplied onto the substrate.

10 . The substrate liquid processing apparatus of claim 1 ,
wherein the processing liquid supply unit comprises a processing liquid nozzle configured to discharge the processing liquid onto the substrate, and the processing liquid nozzle is provided at the ceiling unit.

11 . The substrate liquid processing apparatus of claim 1 ,
wherein the processing liquid is a plating liquid.

12 . A substrate liquid processing method of performing a liquid processing on a substrate by supplying a processing liquid onto the substrate, the substrate liquid processing method comprising:
holding the substrate; supplying the processing liquid onto a top surface of the substrate; covering the substrate with a cover body comprising a ceiling unit disposed above the substrate, a sidewall unit downwardly extended from the ceiling unit, and a heating unit provided at the ceiling unit; and heating the processing liquid on the substrate by the heating unit, wherein, in the heating of the processing liquid, the sidewall unit of the cover body is placed at an outer periphery side of the substrate.

13 . The substrate liquid processing method of claim 12 ,
wherein, in the heating of the processing liquid, a lower end of the sidewall unit is located at a position lower than the substrate.

14 . The substrate liquid processing method of claim 12 ,
wherein the heating of the processing liquid comprises a first heating process of heating the processing liquid while setting a gap between the heating unit and the substrate on which the processing liquid is supplied to a first gap, and a second heating process of heating the processing liquid while setting the gap to a second gap larger than the first gap.

15 . The substrate liquid processing method of claim 14 ,
wherein, in the second heating process, a lower end of the sidewall unit is located at a position lower than the substrate.

16 . The substrate liquid processing method of claim 12 ,
wherein a supply amount of a gas from a gas supply unit to a vicinity of the cover body in the heating of the processing liquid is set to be smaller than a supply amount of the gas in the supplying of the processing liquid.

17 . The substrate liquid processing method of claim 12 ,
wherein an inert gas is supplied to an inside of the cover body after the covering of the substrate with the cover body and before the heating of the processing liquid.

18 . The substrate liquid processing method of claim 12 ,
wherein a nozzle configured to supply the processing liquid onto the substrate is provided at the ceiling unit, and the supplying of the processing liquid is performed after the covering of the substrate.

19 . The substrate liquid processing method of claim 12 ,
wherein the processing liquid is a plating liquid.

20 . A computer-readable recording medium having stored thereon computer-executable instructions that, in response to execution, cause a substrate liquid processing apparatus to perform a substrate liquid processing method as claimed claim 12 .

Assignees

• Tokyo Electron Ltd

Inventors

• Motomatsu Kazuki
• Kaneko Satoshi
• Sakamoto Kazunori

Classifications

• C23C18/1632

  Features specific for the apparatus, e.g. layout of cells and of its equipment, multiple cells · CPC title

• C23C18/38

  Coating with copper · CPC title

• C23C18/1682

  Control of atmosphere · CPC title

• C23C18/42

  Coating with noble metals · CPC title

• C23C18/18

  Pretreatment of the material to be coated · CPC title