Method for manufacturing structure

Patent metadata

Field	Value
Publication number	US-2022165619-A1
Application number	US-202217668949-A
Country	US
Kind code	A1
Filing date	Feb 10, 2022
Priority date	Aug 16, 2019
Publication date	May 26, 2022
Grant date	—

Abstract

Provided is a method of manufacturing a structure that can be easily bonded to a bonding target. The method of manufacturing a structure includes: a conductive layer forming step of forming a conductive layer having conductivity on a part of a surface of an insulating support including at least one surface; a valve metal layer forming step of forming a valve metal layer that covers at least a part of the conductive layer; an anodic oxidation film forming step of forming an anodic oxidation film by performing an anodization treatment on the valve metal layer in a region on the conductive layer using the conductive layer as an electrode; a micropore forming step of forming a plurality of micropores that extend in a thickness direction on the anodic oxidation film; and a filling step of filling the micropores with a conductive material, in which a valve metal layer removing step of removing the valve metal layer having undergone the anodic oxidation film forming step is performed between the anodic oxidation film forming step and the filling step.

First claim

What is claimed is:

1 . A method of manufacturing a structure comprising:
a conductive layer forming step of forming a conductive layer having conductivity on a part of a surface of an insulating support including at least one surface; a valve metal layer forming step of forming a valve metal layer that covers at least a part of the conductive layer; an anodic oxidation film forming step of forming an anodic oxidation film by performing an anodization treatment on the valve metal layer in a region on the conductive layer using the conductive layer as an electrode; a micropore forming step of forming a plurality of micropores that extend in a thickness direction on the anodic oxidation film; and a filling step of filling the micropores with a conductive material, wherein a valve metal layer removing step of removing the valve metal layer having undergone the anodic oxidation film forming step is performed between the anodic oxidation film forming step and the filling step.

2 . The method of manufacturing a structure according to claim 1 ,
wherein the valve metal layer removing step is performed between the anodic oxidation film forming step and the micropore forming step or between the micropore forming step and the filling step.

3 . The method of manufacturing a structure according to claim 1 ,
wherein the micropore forming step includes a step of exposing the conductive layer by forming the plurality of micropores through the anodic oxidation film in the thickness direction.

4 . The method of manufacturing a, structure according to claim 1 ,
wherein in the valve metal layer forming step, the valve metal layer is formed at a temperature of the insulating support of 60° C. or lower.

5 . The method of manufacturing a structure according to claim 1 , further comprising:
a protrusion step of causing a plurality of conductive paths formed of the filled conductive material to protrude from the anodic oxidation film.

6 . The method of manufacturing a structure according to claim 5 ,
wherein each of the plurality of conductive paths that protrude in the protrusion step has the same height as a protrusion portion that protrudes from the anodic oxidation film.

7 . The method of manufacturing a structure according to claim 1 ,
wherein the conductive layer is formed of the same material as the conductive material.

8 . The method of manufacturing a structure according to claim 1 ,
wherein the valve metal is aluminum.

9 . The method of manufacturing a structure according to claim 1 ,
wherein the surface of the insulating support includes an element region, and in the conductive layer forming step, the conductive layer is formed on the element region of the surface of the insulating support.

10 . The method of manufacturing a structure according to claim 2 ,
wherein the micropore forming step includes a step of exposing the conductive layer by forming the plurality of micropores through the anodic oxidation film in the thickness direction.

11 . The method of manufacturing a structure according to claim 2 ,
wherein in the valve metal layer forming step, the valve metal layer is formed at a temperature of the insulating support of 60° C. or lower.

12 . The method of manufacturing a structure according to claim 2 , further comprising:
a protrusion step of causing a plurality of conductive paths formed of the filled conductive material to protrude from the anodic oxidation film.

13 . The method of manufacturing a structure according to claim 12 ,
wherein each of the plurality of conductive paths that protrude in the protrusion step has the same height as a protrusion portion that protrudes from the anodic oxidation film.

14 . The method of manufacturing a structure according to claim 2 ,
wherein the conductive layer is formed of the same material as the conductive material.

15 . The method of manufacturing a structure according to claim 2 ,
wherein the valve metal is aluminum.

16 . The method of manufacturing a structure according to claim 2 ,
wherein the surface of the insulating support includes an element region, and in the conductive layer forming step, the conductive layer is formed on the element region of the surface of the insulating support.

17 . The method of manufacturing a structure according to claim 3 ,
wherein in the valve metal layer forming step, the valve metal layer is formed at a temperature of the insulating support of 60° C. or lower.

18 . The method of manufacturing a structure according to claim 3 , further comprising:
a protrusion step of causing a plurality of conductive paths formed of the filled conductive material to protrude from the anodic oxidation film.

19 . The method of manufacturing a structure according to claim 18 ,
wherein each of the plurality of conductive paths that protrude in the protrusion step has the same height as a protrusion portion that protrudes from the anodic oxidation film.

20 . The method of manufacturing a structure according to claim 3 ,
wherein the conductive layer is formed of the same material as the conductive material.

Assignees

• Fujifilm Corp

Inventors

• Hotta Yoshinori

Classifications

• H10W20/089

  using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning · CPC title

• H10W80/00

  Direct bonding of chips, wafers or substrates · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W72/0198

  batch processes · CPC title

• H10W72/29

  Bond pads specially adapted therefor · CPC title