Deflectable platen and associated method

Patent metadata

Field	Value
Publication number	US-2021134650-A1
Application number	US-201916674340-A
Country	US
Kind code	A1
Filing date	Nov 5, 2019
Priority date	Nov 5, 2019
Publication date	May 6, 2021
Grant date	—

Abstract

A deflectable platen including an annular sidewall, a first layer coupled to the annular sidewall, the first layer having a first temperature control element associated therewith, a second layer coupled to the annular sidewall and disposed in a parallel, spaced-apart relationship with the first layer to define a gap therebetween, the second layer having a second temperature control element associated therewith, and a controller coupled to the first and second temperature control elements and configured to operate the first and second temperature control elements to vary temperatures of the first and second layers relative to one another to deflect the platen to more closely match a contour of a wafer.

First claim

1 . A deflectable platen comprising:
an annular sidewall; a first layer coupled to the annular sidewall, the first layer having a first temperature control element associated therewith; and a second layer coupled to the annular sidewall and disposed in a parallel, spaced-apart relationship with the first layer to define a gap therebetween, the second layer having a second temperature control element associated therewith.

2 . The deflectable platen of claim 1 , further comprising a plurality of electrodes associated with the second layer for facilitating electrostatic clamping of wafers to the deflectable platen.

3 . The deflectable platen of claim 1 , wherein the first and second temperature control elements are first and second heating elements.

4 . The deflectable platen of claim 3 , wherein the first and second heating elements include one or more of wires, cables, plates, and tapes connected to one or more electrical power sources.

5 . The deflectable platen of claim 3 , wherein the first and second heating elements are independently controllable for independently heating the first and second layers to temperatures in excess of 800 degrees Celsius.

6 . The deflectable platen of claim 1 , wherein the first and second temperature control elements are first and second cooling elements.

7 . The deflectable platen of claim 6 , wherein the first and second cooling elements include one or more of channels, conduits, tubes, pipes, and ducts for circulating a cooling fluid.

8 . The deflectable platen of claim 6 , wherein the first and second cooling elements are independently controllable for independently cooling the first and second layers to temperatures in a range of 0 degrees Celsius to −150 degrees Celsius.

9 . The deflectable platen of claim 1 , wherein the first and second layers are formed of a material having a coefficient of thermal expansion in a range between 6.0×10 −6 /° C. and 8.0×10 −6 /° C.

10 . The deflectable platen of claim 1 , wherein the sidewall is formed of a material having a coefficient of thermal expansion less than 6.0×10 −6 /° C.

11 . The deflectable platen of claim 1 , wherein the gap is at vacuum and provides thermal insulation between the first and second layers.

12 . A deflectable platen comprising:
an annular sidewall; a first layer coupled to the annular sidewall, the first layer having a first temperature control element associated therewith; a second layer coupled to the annular sidewall and disposed in a parallel, spaced-apart relationship with the first layer to define a gap therebetween, the second layer having a second temperature control element associated therewith; and a controller coupled to the first and second temperature control elements and configured to operate the first and second temperature control elements to vary temperatures of the first and second layers relative to one another to deflect the deflectable platen to more closely match a contour of a wafer.

13 . A method of deflecting a platen comprising:
providing an annular sidewall; providing a first layer coupled to the annular sidewall, the first layer having a first temperature control element associated therewith; providing a second layer coupled to the annular sidewall and disposed in a parallel, spaced-apart relationship with the first layer to define a gap therebetween, the second layer having a second temperature control element associated therewith; and varying a temperature of at least one of the first and second layers using the first and second temperature control elements.

14 . The method of claim 13 , further comprising providing the second layer with electrodes associated therewith for facilitating electrostatic clamping of wafers to the platen.

15 . The method of claim 13 , wherein the first and second temperature control elements are first and second heating elements, the method further comprising activating the second heating element to heat the second layer relative to the first layer, resulting in thermal expansion of the second layer and convex deflection of the platen.

16 . The method of claim 13 , wherein the first and second temperature control elements are first and second heating elements, the method further comprising activating the first heating element to heat the first layer relative to the second layer, resulting in thermal expansion of the first layer and concave deflection of the platen.

17 . The method of claim 13 , wherein the first and second temperature control elements are first and second cooling elements, the method further comprising activating the second cooling element to cool the second layer relative to the first layer, resulting in thermal contraction of the second layer and concave deflection of the platen.

18 . The method of claim 13 , wherein the first and second temperature control elements are first and second cooling elements, the method further comprising activating the first cooling element to cool the first layer relative to the second layer, resulting in thermal contraction of the first layer and convex deflection of the platen.

19 . The method of claim 13 , further comprising:
measuring a deflection of a wafer to be disposed on the platen; communicating data representing the measured deflection of the wafer to a controller operatively connected to the first and second temperature control elements; and activating, via the controller, at least one of the first and second temperature control elements to vary temperatures of the first and second layers to deflect the platen to more closely match a contour of the wafer.

20 . The method of claim 19 , wherein the deflection of the wafer is measured using one of contact sensors and image analysis.

Assignees

• Applied Materials Inc

Inventors

• Sun Dawei
• Yin Ming

Classifications

• H10P72/722

  Details of electrostatic chucks · CPC title

• H10P72/0616 Primary

  Monitoring of warpages, curvatures, damages, defects or the like · CPC title

• H10P72/7604 Primary

  the wafers being placed on a susceptor, stage or support · CPC title

• H10P72/7611 Primary

  characterised by edge profile or support profile · CPC title

• H10P72/0602

  Temperature monitoring · CPC title