Industrial products formed from plated polymers
US-2016376709-A1 · Dec 29, 2016 · US
US2017073815A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2017073815-A1 |
| Application number | US-201514850199-A |
| Country | US |
| Kind code | A1 |
| Filing date | Sep 10, 2015 |
| Priority date | Sep 10, 2015 |
| Publication date | Mar 16, 2017 |
| Grant date | — |
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A method for depositing metal or metal alloy on a substrate includes preparing a mixture including a hydroxide, a polyol solvent, a metal precursor and a complexing agent, wherein the mixture does not include water; applying the mixture to a substrate including exposed metal surfaces to selectively deposit metal onto the exposed metal surfaces of the substrate; and heating the mixture to a predetermined deposition temperature range from 120° C. and 160° C. at least one of before or after applying the mixture to the substrate.
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What is claimed is: 1 . A method for depositing metal or metal alloy on a substrate, comprising: preparing a mixture including a hydroxide, a polyol solvent, a metal precursor and a complexing agent, wherein the mixture does not include water; applying the mixture to a substrate including exposed metal surfaces to selectively deposit metal onto the exposed metal surfaces of the substrate; and heating the mixture to a predetermined deposition temperature range from 120° C. and 160° C. at least one of before or after applying the mixture to the substrate. 2 . The method of claim 1 , wherein preparing the mixture includes: preparing a first solution including the hydroxide and the polyol solvent; preparing a second solution including the metal precursor, the complexing agent and the polyol solvent; and mixing the first solution and the second solution. 3 . The method of claim 1 , wherein the metal precursor includes at least one precursor selected from a group consisting of a copper precursor, a ruthenium precursor, a cobalt precursor, a platinum precursor, and a manganese precursor. 4 . The method of claim 1 , wherein the metal precursor is selected from a group consisting of copper(II) chloride (CuCl 2 ), copper(II) sulfate (CuSO 4 ), or copper(II) hydroxide (Cu(OH) 2 ). 5 . The method of claim 1 , wherein the hydroxide is selected from a group consisting of sodium hydroxide (NaOH) and potassium hydroxide (KOH). 6 . The method of claim 1 , wherein the complexing agent is selected from a group consisting of an ionic liquid and an organic complex. 7 . The method of claim 6 , wherein the ionic liquid is selected from a group consisting of 1-butyl-3-methylimidazolium tetrafluoroborate and 1-butyl-3-methylimidazolium acetate. 8 . The method of claim 6 , wherein the organic complex is selected from a group consisting of 2,2′-bipyridyl and ethylenediaminetetraacetic acid (EDTA). 9 . The method of claim 1 , further comprising removing the substrate from the mixture after a predetermined deposition period. 10 . The method of claim 9 , further comprising rinsing and drying the substrate. 11 . The method of claim 10 , wherein the rinsing includes rinsing the substrate with at least one of deionized water and a polyol solvent and wherein the drying includes exposing the substrate to molecular nitrogen gas. 12 . The method of claim 1 , wherein applying the mixture includes immersing the substrate in the mixture. 13 . The method of claim 1 , wherein applying the mixture includes using a spin-on approach to apply the mixture to the substrate. 14 . A method for depositing metal or metal alloy on a substrate, comprising: preparing a first solution including a hydroxide and a polyol solvent; applying the first solution to a substrate including exposed metal surfaces; heating the first solution to a first predetermined temperature at least one of before or after applying the solution to the substrate; preparing a second solution including a metal precursor, a complexing agent and a polyol solvent; heating the second solution to a second predetermined temperature; and applying the second solution to the substrate to selectively deposit metal onto the metal surfaces of the substrate, wherein the first predetermined temperature and the second predetermined temperature are in a range from 120° C. and 160° C. 15 . The method of claim 14 , wherein the metal precursor includes at least one precursor selected from a group consisting of a copper precursor, a ruthenium precursor, a platinum precursor, a cobalt precursor and a manganese precursor. 16 . The method of claim 14 , wherein the metal precursor is selected from a group consisting of copper(II) chloride (CuCl 2 ), copper(II) sulfate (CuSO 4 ), or copper(II) hydroxide (Cu(OH) 2 ). 17 . The method of claim 14 , wherein the hydroxide is selected from a group consisting of sodium hydroxide (NaOH) and potassium hydroxide (KOH). 18 . The method of claim 14 , wherein the complexing agent is selected from a group consisting of an ionic liquid and an organic complex. 19 . The method of claim 18 , wherein the ionic liquid is selected from a group consisting of 1-butyl-3-methylimidazolium tetrafluoroborate and 1-butyl-3-methylimidazolium acetate. 20 . The method of claim 18 , wherein the organic complex is selected from a group consisting of 2,2′-bipyridyl and ethylenediaminetetraacetic acid (EDTA). 21 . The method of claim 14 , further comprising removing the substrate after a predetermined deposition period. 22 . The method of claim 21 , further comprising rinsing and drying the substrate. 23 . The method of claim 22 , wherein the rinsing includes rinsing the substrate with at least one of deionized water and a polyol solvent and the drying includes exposing the substrate to molecular nitrogen gas. 24 . The method of claim 14 , wherein applying the first solution includes immersing the substrate in the first solution and applying the second solution includes adding the second solution to the first solution while the substrate is immersed in the first solution. 25 . The method of claim 14 , wherein applying the first solution to the substrate includes using a spin-on approach and applying the second solution to the substrate includes using the spin-on approach. 26 . A method for depositing metal or metal alloy on a substrate, comprising: preparing a first solution including a metal precursor, a hydroxide and a polyol solvent; applying the first solution to a substrate including exposed metal surfaces; heating the first solution to a first predetermined temperature at least one of before or after applying the first solution to the substrate; preparing a second solution including a complexing agent and a polyol solvent; heating the second solution to a second predetermined temperature; and applying the second solution to the substrate to selectively deposit metal onto the exposed metal surfaces of the substrate, wherein the first predetermined temperature and the second predetermined temperature are in a range from 120° C. and 160° C. 27 . The method of claim 26 , wherein the metal precursor includes at least one precursor selected from a group consisting of a copper precursor, a ruthenium precursor, a platinum precursor, a cobalt precursor and a manganese precursor. 28 . The method of claim 27 , wherein the metal precursor is selected from a group consisting of copper(II) chloride (CuCl 2 ), copper(II) sulfate (CuSO 4 ), or copper(II) hydroxide (Cu(OH) 2 . 29 . The method of claim 26 , wherein the hydroxide is selected from a group consisting of sodium hydroxide (NaOH) and potassium hydroxide (KOH). 30 . The method of claim 26 , wherein the complexing agent is selected from a group consisting of an ionic liquid and an organic complex. 31 . The method of claim 30 , wherein the ionic liquid is selected from a group consisting of 1-butyl-3-methylimidazolium tetrafluoroborate and 1-butyl-3-methylimidazolium acetate. 32 . The method of claim 30 , wherein the organic complex is selected from a group consisting of 2,2′-bipyridyl and ethylenediaminetetraacetic acid (EDTA). 33 . The method of claim 26 , further comprising removing the substrate after a predeter
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