Optoelectronic device comprising light-emitting diodes

Patent metadata

Field	Value
Publication number	US-2016197064-A1
Application number	US-201414916983-A
Country	US
Kind code	A1
Filing date	Sep 30, 2014
Priority date	Sep 30, 2013
Publication date	Jul 7, 2016
Grant date	—

Abstract

An optoelectronic device including a semiconductor substrate that is optionally doped with a first type of conductivity; a first semiconductor region that is electrically connected to the substrate, doped with the first type of conductivity or a second opposite type of conductivity and more strongly doped than the substrate; a first set of first light-emitting diodes resting on the first semiconductor region, the first light-emitting diodes comprising wire-like, conical or frustoconical semiconductor elements; and a conductive portion in contact with the first semiconductor region.

First claim

1 . An optoelectronic device comprising:
a semiconductor silicon substrate, non-doped or doped with a first conductivity type; a first doped semiconductor silicon region, electrically connected to the substrate, extending inside of the substrate or on top of the substrate in contact with the substrate, of the first conductivity type or of a second conductivity type opposite to the first type, and more heavily doped than the substrate; seed pads or a seed layer in contact with the first semiconductor region; a first assembly of first light-emitting diodes supported by the first semiconductor region, the first light-emitting diodes comprising semiconductor elements, mainly made of a III-V compound, having a wire, conical, or tapered shape and in contact with the seed pads or with the seed layer; and a conductive portion in contact with the first semiconductor region.

2 . The optoelectronic device of claim 1 , wherein the first semiconductor region is obtained by one or a plurality of ion implantation steps.

3 . The optoelectronic device of claim 1 , wherein the first semiconductor region is obtained by a homoepitaxy step.

4 . The optoelectronic device of claim 1 , further comprising a first electrode layer, at least partially transparent, covering each first light-emitting diode and a first conductive layer covering the first electrode layer around the first light-emitting diodes.

5 . The optoelectronic device of claim 1 , further comprising at least one insulating portion extending along at least one lateral edge of the first semiconductor region.

6 . The optoelectronic device of claim 1 , further comprising at least one second doped semiconductor region of a conductivity type opposite to that of the first semiconductor region and extending along at least one lateral edge of the first semiconductor region.

7 . The optoelectronic device of claim 1 , wherein the substrate is monolithic.

8 . The optoelectronic device of claim 1 , wherein the substrate is divided into a semiconductor layer, containing the first semiconductor region, and separated from the rest of the substrate by an insulating layer.

9 . The optoelectronic device of claim 1 , wherein the dopant concentration of the substrate is smaller than or equal to 1015 atoms/cm 3 and the dopant concentration of the first semiconductor region is in the range from 5*1016 to 2*1020 atoms/cm 3 .

10 . The optoelectronic device of claim 1 , further comprising at least one electronic component at least partly formed in the substrate.

11 . The optoelectronic device of claim 10 , wherein the electronic component belongs to the group comprising a diode, a zener diode, an avalanche diode, a bipolar transistor, a metal-oxide-semiconductor field-effect transistor, a resistor, a metal-oxide-semiconductor capacitance, a metal-insulator-metal capacitance, a thyristor, a varactor, a volatile memory, and a non-volatile memory.

12 . The optoelectronic device of claim 1 , comprising:
a third doped semiconductor region electrically connected to the substrate, of the first conductivity type or of a second conductivity type opposite to the first type, and more heavily doped than the substrate; a second assembly of light-emitting diodes supported by the third semiconductor region, the light-emitting diodes of the second assembly comprising wire, conical, or tapered semiconductor elements; and a second electrode layer covering each second light-emitting diode and a second conductive layer covering the second electrode layer around the first light-emitting diodes, the second electrode layer or the second conductive layer being in contact with the first semiconductor region.

13 . The optoelectronic device of claim 1 , comprising a fourth semiconductor region electrically connected to the substrate and distant from the first semiconductor region, of the same conductivity type as the first semiconductor region, more heavily doped than the substrate, and connected to an electrode of the first light-emitting diodes.

14 . The optoelectronic device of claim 13 , comprising a fifth semiconductor region containing the fourth semiconductor region.

15 . The optoelectronic device of claim 13 , wherein the fifth semiconductor region further contains the first semiconductor region.

16 . The optoelectronic device of claim 1 , comprising:
a sixth semiconductor region electrically connected to the substrate, of the same conductivity type as the first semiconductor region; a seventh semiconductor region electrically connected to the substrate, of a conductivity type opposite to that of the first semiconductor region; an eighth semiconductor region in contact with the substrate and of the same conductivity type as the sixth semiconductor region, connected to the first semiconductor region or connected to the sixth semiconductor region; and a ninth semiconductor region of the same conductivity type as the seventh semiconductor region, wherein the ninth semiconductor region extends between the sixth and eighth semiconductor regions and is connected to the seventh semiconductor region or wherein the ninth semiconductor region extends between the first and eighth semiconductor regions, the ninth semiconductor region being connected to the seventh semiconductor region.

17 . The optoelectronic device of claim 1 , comprising a tenth and an eleventh semiconductor regions, connected to each other, of opposite conductivity types and both separated from the first semiconductor region by at least one insulating or semiconductor portion extending along at least one lateral edge of the first semiconductor region ( 14 ).

18 . The optoelectronic device of claim 1 , wherein the seed pads or the seed layer are made of aluminum nitride, of boron, of boron nitride, of titanium, of titanium nitride, of tantalum, of tantalum nitride, of hafnium, of hafnium nitride, of niobium, of niobium nitride, of zirconium, of zirconium borate, of zirconium nitride, of silicon carbide, of tantalum carbo-nitride, of magnesium nitride in MgxNy form, where x is approximately equal to 3 and y is approximately equal to 2, for example, magnesium nitride in Mg3N2 form or magnesium gallium nitride, of tungsten, of tungsten nitride, or of a combination of these materials.

19 . The optoelectronic device of claim 1 , wherein the seed pads or the seed layer are made of a nitride, a carbide, or a boride of a transition metal from column IV, V, or VI of the periodic table of elements or a combination of these compounds.

Assignees

• Aledia

Inventors

• Bouvier Christophe
• Dornel Erwan
• Hugon Xavier
• Cagli Carolo

Classifications

• H10W90/00

  Package configurations · CPC title

• H10H20/821

  of the light-emitting regions, e.g. non-planar junctions · CPC title

• H10H20/818

  within the light-emitting regions · CPC title

• H10H20/816

  having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures · CPC title

• H10H29/10 Primary

  Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 (active-matrix LED displays H10H29/30) · CPC title