Semiconductor device and method for forming the same
US-2024395669-A1 · Nov 28, 2024 · US
US9153545B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9153545-B2 |
| Application number | US-201113991161-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 15, 2011 |
| Priority date | Dec 20, 2010 |
| Publication date | Oct 6, 2015 |
| Grant date | Oct 6, 2015 |
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A light-emitting element according to the present invention includes a semiconductor light-emitting element having a front surface and a rear surface so that light is extracted from the rear surface, and having a first n-side electrode and a first p-side electrode on the front surface, and a support element having a conductive substrate having a front surface and a rear surface as well as a second n-side electrode and a second p-side electrode formed on the front surface of the conductive substrate, the first n-side electrode and the second n-side electrode, and the first p-side electrode and the second p-side electrode are so bonded to one another respectively that the semiconductor light-emitting element is supported by the support element in a facedown posture downwardly directing the front surface, and the support element has an n-side external electrode and a p-side external electrode formed on the rear surface of the conductive substrate, a conductive via passing through the conductive substrate from the front surface up to the rear surface for electrically connecting the second n-side electrode and the n-side external electrode and/or the second p-side electrode and the p-side external electrode with each other, and an insulating film formed between the via and the conductive substrate to cover the side surface of the via.
Opening claim text (preview).
The invention claimed is: 1. A light-emitting element unit comprising: a semiconductor light-emitting element having a front surface and a rear surface so that light is extracted from the rear surface, and having a first n-side electrode and a first p-side electrode on the front surface; and a support element having a conductive substrate having a front surface and a rear surface as well as a second n-side electrode and a second p-side electrode formed on the front surface of the conductive substrate, wherein the first n-side electrode and the second n-side electrode, and the first p-side electrode and the second p-side electrode are so bonded to one another respectively that the semiconductor light-emitting element is supported by the support element in a facedown posture downwardly directing the front surface, and the support element has: an n-side external electrode and a p-side external electrode formed on the rear surface of the conductive substrate, a conductive via passing through the conductive substrate from the front surface up to the rear surface for electrically connecting the second n-side electrode and the n-side external electrode and/or the second p-side electrode and the p-side external electrode with each other, and an insulating film formed between the via and the conductive substrate to cover the side surface of the via, wherein the second n-side electrode and the second p-side electrode connected to the via include: wires set along the front surface of the conductive substrate and connected to the respective ones of the conductive substrate and the via, and bumps formed on the wires and bonded to the first n-side electrode or the first p-side electrode, wherein the light-emitting element unit further includes a resistive element interposed between positions of the wires to which the via is connected and positions connected with the bumps. 2. The light-emitting element unit according to claim 1 , wherein the first n-side electrode and the first p-side electrode connected to the bumps are provided in the form of bumps made of the same metallic material as the bumps. 3. The light-emitting element unit according to claim 1 , wherein the bumps are made of Au. 4. The light-emitting element unit according to claim 1 , wherein the wires are made of Al. 5. The light-emitting element unit according to claim 1 , wherein the conductive substrate has a p-type region to which the second n-side electrode is connected and an n-type region to which the second p-side electrode is connected, the support element includes a Zener diode having a p-n junction of the n-type region and the p-type region, and the via includes an n-side via and a p-side via connected to the respective ones of the second n-side electrode and the second p-side electrode. 6. The light-emitting element unit according to claim 5 , wherein the conductive substrate is a p-type semiconductor substrate as the p-type region, and the n-type region is a region floated on a surface layer portion of the p-type semiconductor substrate. 7. The light-emitting element according to claim 6 , wherein the p-side via passes through the p-type semiconductor substrate, not to be in contact with the floated n-type region. 8. The light-emitting element unit according to claim 7 , wherein the p-type semiconductor substrate includes a p + -type contact region formed adjacently to the n-type region on the surface layer portion thereof so that the second n-side electrode is connected thereto, the p-side via is formed on a side of the n-type region opposite to the p + -type contact region, and the n-side via is formed on a side of the p + -type contact region opposite to the n-type region. 9. The light-emitting element unit according to claim 7 , wherein the p-type semiconductor substrate include a p + -type contact region, and wherein the n-side via, the n-type region, the p + -type contact region and the p-side via are arranged on the same straight line in plan view. 10. The light-emitting element unit according to claim 1 , wherein the conductive substrate has a driving circuit driving a plurality of semiconductor light-emitting elements respectively, the support element includes a driving element supporting the plurality of semiconductor light-emitting elements, and the via is electrically connected to the respective ones of the second n-side electrode and the second p-side electrode. 11. The light-emitting element unit according to claim 10 , wherein the plurality of semiconductor light-emitting elements are light-emitting elements whose emission wavelengths are different from one another. 12. The light-emitting element unit according to claim 10 , wherein the plurality of semiconductor light-emitting elements include a red LED element, a green LED element and a blue LED element. 13. The light-emitting element unit according to claim 12 , wherein the first n-side electrodes of the respective ones of the red LED element, the green LED element and the blue LED element are connected to the common second n-side electrode. 14. A light-emitting element package comprising: the emitting element unit according to claim 1 ; a base substrate supporting the light-emitting element unit and having a cathode terminal and an anode terminal electrically connected to the respective ones of the n-side external electrode and the p-side external electrode of the light-emitting element unit; and a resin case formed on the base substrate to surround the light-emitting element. 15. A surface mount light-emitting element unit comprising: a base substrate having a cathode terminal and an anode terminal; a support element having a conductive substrate having a front surface and a rear surface, an n-side electrode and a p-side electrode formed on the front surface of the conductive substrate, and an n-side external electrode and a p-side external electrode formed on the rear surface of the conductive substrate to be electrically connected to the cathode terminal and the anode terminal respectively; a semiconductor light-emitting element having a front surface and a rear surface so that light is extracted from the rear surface, and having a cathode-side electrode and an anode-side electrode on the front surface, in which the cathode-side electrode and the n-side electrode as well as the anode-side electrode and the p-side external electrode are so bonded to one another respectively that the semiconductor light-emitting element is supported by the support element in a facedown posture downwardly directing the front surface for constituting a light-emitting element circuit having a protective circuit in association with the support element; and a resin case formed on a side of a surface of the base substrate loaded with the support element for surrounding the support element and the semiconductor light-emitting element, wherein the n-side electrode and the p-side electrode include: wires set along the front surface of the conductive substrate and connected to the conductive substrate, and bumps formed on the wires and bonded to the cathode-side electrode or the anode-side electrode wherein the surface mount light-emitting element unit further comprises a resistive element interposed between positions of the wires to which the conductive substrate is connected and positions connected with the bumps. 16. The surface mount light-emitting element unit according to claim 15 , wherein the cathode-side electrode and the anode-side electrode connected to the bumps are provided in the form of bumps made of the same metallic material as
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