Optoelectronic device and method for manufacturing same

Patent metadata

Field	Value
Publication number	US-9537050-B2
Application number	US-201414891258-A
Country	US
Kind code	B2
Filing date	May 13, 2014
Priority date	May 14, 2013
Publication date	Jan 3, 2017
Grant date	Jan 3, 2017

Abstract

The invention relates to an optoelectronic device and to the method for manufacturing same. The optoelectronic device ( 45 ), according to the invention includes, in particular: a semiconductor substrate ( 46 ) doped with a first type of conductivity; semiconductor contact pads ( 18 ) or a semiconductor layer on a surface ( 16 ) of the substrate which are/is respectively doped with a second type of conductivity that is the opposite of the first type; and semiconductor elements ( 24 ), each semiconductor element being in contact with a contact pad or with the layer.

First claim

The invention claimed is:

1. An optoelectronic device comprising:
a doped semiconductor substrate of a first conductivity type;
semiconductor pads or a semiconductor layer on a surface of the substrate doped with a second conductivity type opposite to the first type; and
semiconductor elements, each semiconductor element being in contact with a pad or with the layer,
wherein the substrate is made of a first semiconductor material selected from the group comprising silicon, germanium, a silicon-germanium alloy, silicon carbide, a III-V compound, such as GaN, GaAs, GaP, or GaSb, or ZnO, and a combination of these compounds, wherein the semiconductor pads or the semiconductor layer are made of a material selected from the group comprising aluminum nitride, boron nitride, silicon carbide, magnesium nitride, magnesium gallium nitride, or a combination thereof and of their nitrided compounds, and wherein each semiconductor element is at least partially covered with a semiconductor structure capable of emitting or of capturing light; and
wherein each semiconductor element is a microwire, a nanowire, a conical or tapered element with a polygonal base.

2. The optoelectronic device of claim 1 , wherein the dopant concentration of the pads or of the layer is greater than 10 19 atoms/cm 3 .

3. The optoelectronic device of claim 1 , wherein the dopant concentration of the is greater than 10 19 atoms/cm 3 .

4. The optoelectronic device of any of claim 1 , wherein each semiconductor element comprises at least a portion, in contact with the associated pad or with the layer, doped with the second conductivity type.

5. The optoelectronic device of claim 4 , wherein, for each semiconductor element, the dopant concentration of the portion of the semiconductor element is greater than 10 19 atoms/cm 3 .

6. The optoelectronic device of claim 1 , further comprising a portion covering at least the lateral sides of each pad, said portion preventing the growth of the semiconductor elements on the lateral sides.

7. The optoelectronic device of claim 1 , further comprising a dielectric region extending in the substrate from said surface and connecting, for each pair of pads, one of the pads in the pair to the other pad in the pair.

8. The optoelectronic device of claim 1 , wherein the substrate is made of silicon.

9. The optoelectronic device of claim 4 , wherein said portion mainly comprises a second semiconductor material selected from the group comprising silicon, germanium, silicon carbide, a III-V compound, a II-VI compound, and a combination of these compounds.

10. The optoelectronic device of claim 1 , wherein the thickness of each pad is in the range from 1 nm to 100 nm and wherein the substrate is in electric contact with each pad.

11. A method of manufacturing an optoelectronic device, comprising the successive steps of:
providing a doped semiconductor substrate of a first conductivity type;
forming, on a surface of the substrate, semi-conductor pads or a semiconductor layer doped with a second conductivity type opposite to the first type; and
forming semiconductor elements, each semiconductor element being in contact with a pad or with the layer,
wherein the substrate is made of a first semiconductor material selected from the group comprising silicon, germanium, a silicon-germanium alloy, silicon carbide, a III-V compound, such as GaN, GaAs, GaP, or GaSb, or ZnO, and a combination of these compounds, wherein the semiconductor pads or the semiconductor layer are made of a material selected from the group comprising aluminum nitride, boron nitride, silicon carbide, magnesium nitride, magnesium gallium nitride, or a combination thereof and of their nitrided compounds, and wherein each semiconductor element is at least partially covered with a semiconductor structure capable of emitting or of capturing light; and
wherein each semiconductor element is a microwire, a nanowire, a conical or tapered element with a polygonal base.

Assignees

• Commissariat à{grave over ( )}l'énergie atomique et aux énergies alternatives
• Aledia
• Commissariat Energie Atomique

Inventors

• Gilet Philippe
• Tchelnokov Alexei
• Robin Ivan Christophe

Classifications

• B82Y20/00

  Nanooptics, e.g. quantum optics or photonic crystals · CPC title

• H01L31/035227

  Electricity · mapped topic

• H01L31/0264

  Electricity · mapped topic

• H01L33/08

  Electricity · mapped topic

• H01L31/035281

  Electricity · mapped topic