Optoelectronic device comprising light-emitting diodes

Patent metadata

Field	Value
Publication number	US-9876142-B2
Application number	US-201415024006-A
Country	US
Kind code	B2
Filing date	Sep 30, 2014
Priority date	Sep 30, 2013
Publication date	Jan 23, 2018
Grant date	Jan 23, 2018

Abstract

An optoelectronic device including a support having a first face; a first set of first light-emitting diodes having first wire-like, conical or frustoconical semiconductor elements, each resting on a second face of a first contact stud, each first contact stud including, in addition, a third face opposite the second face; and a first conductive layer connecting the first contact studs and extending at least over part of the second face or the third face of each first contact stud, the first conductive layer and/or the first contact studs resting on the support.

First claim

The invention claimed is:

1. An optoelectronic device comprising:
a support having a first surface;
a first assembly of first light-emitting diodes comprising first wire-shaped, conical or frustoconical semiconductor elements, made of a first material and each resting on a second surface of a first pad made of a second material different from the first material, each first pad further comprising a third surface opposite to the second surface; and
a first conductive layer connecting first pads and extending at least over a portion of the second surface or of the third surface of each first pad, the first conductive layer and/or the first pads resting on the support,
wherein the first pads rest on the support and wherein the first conductive layer extends on the support between the first pads and covers a portion of the second surface of each first pad, the first conductive layer being open at the locations of each first semiconductor element.

2. The optoelectronic device of claim 1 , wherein the first conductive layer is made of a material selected from the group comprising alloys comprising a transition metal or more than one transition metal from among W, Ta, Re, Os, Mo, Nb, Pt, Pd, Cr, Zr, Hf, Cu, Co, Ni, and Ti and their silicided, nitrided, and carbided forms.

3. The optoelectronic device of claim 1 , wherein the first conductive layer is made of a material selected from the group comprising silicides and metals capable of forming a silicide, particularly Pt, PtSi, Ti, TiSi 2 , Co, CoSi 2 , CoSi, Co 2 Si, Ni, NiSi, NiSi 2 , W, WSi 2 , Mo, MoSi 2 , Ta, and TaSi 2 .

4. The optoelectronic device of claim 1 , wherein the first conductive layer is made of a material selected from the group comprising silicides and metals capable of forming a stable silicide on silicon at a 1,000° C. temperature, particularly W, WSi 2 , Mo, MoSi 2 , Ta and TaSi 2 , Ti, TiSi 2 , Co, CoSi 2 , TiW, and TiWSi.

5. The optoelectronic device of claim 1 , wherein first conductive layer is made of a material selected from among materials having a thermal expansion coefficient close, to within 10%, to the thermal expansion coefficient of silicon or of polysilicon, particularly W, WSi 2 , TiW, TiWSi 2 .

6. The optoelectronic device of claim 1 , further comprising a first insulating layer at least partly covering the first conductive layer.

7. The optoelectronic device of claim 6 , wherein the first insulating layer extends between the first semiconductor elements and the first conductive layer.

8. The optoelectronic device of claim 1 , wherein the first conductive layer is in contact with the first semiconductor elements.

9. The optoelectronic device of claim 1 , wherein the support comprises a semiconductor substrate and an insulating region between the substrate and the first conductive layer.

10. The optoelectronic device of claim 1 , wherein each first pad is made of material selected from the group comprising a nitride, a carbide, or a boride of a transition metal from column IV, V, or VI of the periodic table of elements or a combination of these compounds.

11. The optoelectronic device of claim 1 , wherein the support is a doped or undoped semiconductor substrate, with a dopant concentration smaller than or equal to 5*10 16 atoms/cm 3 , the device further comprising a doped semiconductor region extending in the substrate from the first surface with a dopant concentration in the range from 5*10 16 atoms/cm 3 to 2*10 20 atoms/cm 3 , said region being in contact with the first conductive layer.

12. The optoelectronic device of claim 1 , further comprising:
a first electrode connected to the first light-emitting diodes;
a second assembly of second light-emitting diodes comprising second wire-shaped, conical, or frustoconical semiconductor elements, each resting on a fourth surface of a second pad, each second pad further comprising a fifth surface opposite to the fourth surface;
a second conductive layer connecting the second pads and extending at least over a portion of the fourth surface or of the fifth surface of each second pad, the second conductive layer and/or the second pads resting on the support; and
a second electrode connected to the second light-emitting diodes and coming into contact with the first conductive layer.

13. A method of manufacturing an optoelectronic device comprising the steps of:
providing a support comprising a first surface;
forming a first assembly of first light-emitting diodes comprising first wire-shaped, conical, or frustoconical semiconductor elements, each resting on a second surface of a first pad, each first pad further comprising a third surface opposite to the second surface; and
forming a first conductive layer connecting first pads and extending at least over a portion of the second surface or of the third surface of each first pad, the first conductive layer and/or the first pads resting on the support,
wherein the method comprises the successive steps of:
forming the first pads on the support;
covering the first pads and the support with a third conductive layer;
forming first openings in the third conductive layer to form the first conductive layer, each first opening exposing a first portion of one of the first pads;
covering the third conductive layer and the first exposed portions with a third insulating layer;
forming second openings in the third insulating layer, each second opening exposing a second portion of one of the first pads; and
growing the first semiconductor elements from the second exposed portions of the first pads.

14. An optoelectronic device comprising:
a support having a first surface;
a first assembly of first light-emitting diodes comprising first wire-shaped, conical or frustoconical semiconductor elements, made of a first material and each resting on a second surface of a first pad made of a second material different from the first material, each first pad further comprising a third surface opposite to the second surface; and
a first conductive layer connecting first pads and extending at least over a portion of the second surface or of the third surface of each first pad, the first conductive layer and/or the first pads resting on the support,
wherein the first conductive layer rests on the first surface and wherein each first pad rests on the first conductive layer on the side of the third surface and wherein a second insulating layer covers the first conductive layer and a portion of each first pad and wherein the portion of the first conductive layer which is not covered with the first pads is nitrided at its surface.

15. The optoelectronic device of claim 14 , wherein the first conductive layer is made of a material selected from the group comprising alloys comprising a transition metal or more than one transition metal from among W, Ta, Re, Os, Mo, Nb, Pt, Pd, Cr, Zr, Hf, Cu, Co, Ni, and Ti and their silicided, nitrided, and carbided forms.

16. The optoelectronic device of claim 14 , wherein the first conductive layer is made of a material selected from the group comprising silicides and metals capable of forming a silicide, particularly Pt, PtSi, Ti, TiSi 2 , Co, CoSi 2 , CoSi, Co 2 Si, Ni, NiSi, NiSi 2 , W, WSi 2 , Mo, MoSi 2 , Ta, and TaSi 2 .

17. The optoelectronic device of claim 14 , wherein the first conductive layer is made of a material selected from the group comprising silicides and metals capable of forming a stable silicide on silicon at a 1,000° C. temperature, particularly W, WSi 2 , Mo, MoSi 2 , Ta and TaSi 2 , Ti, TiSi 2 , Co, CoSi 2 , TiW, and TiWSi.

18. The optoelect

Assignees

• Aledia

Inventors

• Bouvier Christophe
• Dornel Erwan

Classifications

• H10P14/3462

  Nanowires · CPC title

• H10P14/3416

  Nitrides · CPC title

• H10P14/3216

  Nitrides · CPC title

• H01L33/38

  Electricity · mapped topic

• H01L33/18

  Electricity · mapped topic