Etchant composition

Patent metadata

Field	Value
Publication number	US-12590249-B2
Application number	US-202117496174-A
Country	US
Kind code	B2
Filing date	Oct 7, 2021
Priority date	Jan 8, 2019
Publication date	Mar 31, 2026
Grant date	Mar 31, 2026

Abstract

An etchant composition and a method of fabricating a semiconductor device, the composition including an inorganic acid; about 0.01 parts by weight to about 0.5 parts by weight of colloidal silica; about 0.01 parts by weight to about 30 parts by weight of an ammonium-based additive; and about 20 parts by weight to about 50 parts by weight of a solvent, all parts by weight being based on 100 parts by weight of the inorganic acid.

First claim

What is claimed is:

1 . An etchant composition, comprising:
an inorganic acid; about 0.01 parts by weight to about 0.5 parts by weight of colloidal silica; about 0.01 parts by weight to about 30 parts by weight of an ammonium additive; and about 20 parts by weight to about 50 parts by weight of a solvent, all parts by weight being based on 100 parts by weight of the inorganic acid, wherein the colloidal silica has a structure represented by Chemical Formula 1, the structure being formed under acidic conditions at a pH of 1 or less and a temperature of 200° C. or higher:

wherein, in Chemical Formula 1,
m is an integer of 2 to 8, and
R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , and R 8 are each independently a hydrogen atom, a hydroxyl group, or a group represented by Chemical Formula 2, at least one of R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , and R 8 being a hydroxyl group or a group represented by Chemical Formula 2,

wherein, in Chemical Formula 2,
n is an integer of 0 to 5, and
R 9 and R 10 are each independently a hydrogen atom, a hydroxyl group, a C1 to C20 alkyl group, a C2 to C20 alkenyl group, a C2 to C20 alkynyl group, a C1 to C20 hydroxyalkyl group, a C1 to C20 aminoalkyl group, a C1 to C20 alkoxy group, a C1 to C20 aminoalkoxy group, a nitrile group, or a carboxyl group, and
wherein the etchant composition has a pH of 1 or less and a temperature of 200° C. or higher.

2 . The etchant composition as claimed in claim 1 , wherein the inorganic acid includes phosphoric acid, sulfuric acid, nitric acid, silicic acid, hydrofluoric acid, boric acid, hydrochloric acid, perchloric acid, or a mixture thereof.

3 . The etchant composition as claimed in claim 2 , wherein the inorganic acid includes phosphoric acid.

4 . The etchant composition as claimed in claim 1 , wherein the ammonium additive includes ammonium hydroxide, ammonium chloride, ammonium acetate, ammonium phosphate, ammonium peroxydisulfate, ammonium sulfate, ammonium hydrofluoric acid salt, ammonia, or a combination thereof.

5 . The etchant composition as claimed in claim 1 , wherein the solvent includes deionized water.

6 . The etchant composition as claimed in claim 1 , further comprising about 0.01 parts by weight to about 10 parts by weight an amine compound, an azole compound, or a nitrate compound, based on 100 parts by weight of the inorganic acid.

7 . The etchant composition as claimed in claim 6 , wherein:
the amine compound includes methylamine, dimethylamine, trimethylamine, ethylamine, diethylamine, triethylamine, methylethylamine, propylamine, isopropylamine, 2-aminopentane, methylethanolamine, triphenylamine, naphthylamine, anthracenylamine, 9-methyl-anthracenylamine, diphenylamine, ditolylamine, N-phenyltolylamine, N-dimethylfluorenyltriphenyleneamine, N-triphenylenyldibenzofuranamine, N-triphenylenyldibenzothiopheneamine, N-phenyltriphenyleneamine, N-biphenyldimethylfluoreneamine, N-biphenyldibenzofuranamine, N-biphenyldibenzothiopheneamine, N-biphenylphenylcarbazoleamine, N-biphenyltriphenyleneamine, N-naphthyltriphenyleneamine, N-phenyldiphenylfluoreneamine, N-biphenylspirobifluoreneamine, N-phenylspirobifluoreneamine, N-naphthylspirobifluoreneamine, N-naphthyldiphenylfluoreneamine, N-phenyldimethylfluoreneamine, N-naphthyldimethylfluoreneamine, N-phenyldibenzofuranamine, N-biphenyldiphenylfluoreneamine, N-phenylbiphenylamine, N-naphthyldibenzofuranamine, N-naphthylphenylcarbazoleamine, N-naphthyldibenzothiopheneamine, N-phenyldibenzothiopheneamine, N-phenylphenylcarbazoleamine, dinaphthylamine, or N-phenylnaphthaleneamine, the azole compound includes imidazole, pyrazole, 1,2,3-triazole, 1,2,4-triazole, tetrazole, pentazole, oxazole, isoxazole, 1,2,4-oxadiazole, 1,2,5-oxadiazole, 1,3,4-oxadiazole, thiazole, isothiazole, 1,2,3-thiadiazole, 1,2,4-thiadiazole, 1,2,5-thiadiazole, or 1,3,4-thiadiazole, and the nitrate compound includes dialkyl imidazolium nitrate, guanidine nitrate, ethyl nitrate, propyl nitrate, butyl nitrate, pentyl nitrate, octyl nitrate, glycol dinitrate, diethylene glycol dinitrate, pyridine nitrate, lithium nitrate, potassium nitrate, aluminum nitrate, cupric nitrate, ferric nitrate, zinc nitrate, cerous nitrate, cesium nitrate, barium nitrate, silver nitrate, or ammonium nitrate.

8 . The etchant composition as claimed in claim 6 , wherein the etchant composition comprises about 0.3 parts by weight to about 15 parts by weight of the ammonium additive.

9 . The etchant composition of claim 1 , wherein the etchant composition comprises 0.05 parts by weight to 0.5 parts by weight of the colloidal silica.

10 . The etchant composition of claim 1 , wherein the ammonium additive comprises 0.3 parts by weight to 15 parts by weight of ammonium hydroxide.

11 . The etchant composition of claim 1 , wherein the etchant composition comprises 30 parts by weight to 45 parts by weight of the solvent.

12 . An etchant composition, comprising:
an inorganic acid; about 0.01 parts by weight to about 0.5 parts by weight of colloidal silica; about 0.1 parts by weight to about 20 parts by weight of an ammonium additive; and about 20 parts by weight to about 50 parts by weight of a solvent, all parts by weight being based on 100 parts by weight of the inorganic acid, wherein the colloidal silica has a structure represented by Chemical Formula 1, the structure being formed under acidic conditions at a pH of 1 or less and a temperature of 200° C. or higher:

wherein, in Chemical Formula 1,
m is an integer of 2 to 8, and
R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , and R 8 are each independently a hydrogen atom, a hydroxyl group, or a group represented by Chemical Formula 2, at least one of R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , and R 8 being a hydroxyl group or a group represented by Chemical Formula 2,

wherein, in Chemical Formula 2,
n is an integer of 0 to 5, and
R 9 and R 10 are each independently a hydrogen atom, a hydroxyl group, a C1 to C20 alkyl group, a C2 to C20 alkenyl group, a C2 to C20 alkynyl group, a C1 to C20 hydroxyalkyl group, a C1 to C20 aminoalkyl group, a C1 to C20 alkoxy group, a C1 to C20 aminoalkoxy group, a nitrile group, or a carboxyl group, and
wherein the etchant composition further comprises about 0.01% by weight (wt %) to about 1 wt % of a fluorine compound, and
wherein the etchant composition has a pH of 1 or less and a temperature of 200° C. or higher.

13 . The etchant composition as claimed in claim 12 , wherein the inorganic acid includes phosphoric acid.

14 . The etchant composition as claimed in claim 13 , wherein the ammonium additive includes ammonium hydroxide, ammonium chloride, ammonium acetate, ammonium phosphate, ammonium peroxydisulfate, ammonium sulfate, ammonium hydrofluoric acid salt, ammonia, or a combination thereof.

15 . The etchant composition as claimed in claim 12 , wherein the solvent includes deionized water.

16 . The etchant composition as claimed in claim 12 , further comprising about 0.01 parts by weight to about 10 parts by weight an amine compound, an azole compound, or a nitrat

Assignees

• Samsung Electronics Co Ltd

Inventors

• Kim Jung-Ah
• Kim Young-Chan
• Lee Hyo-San
• Han Hoon
• Lee Jin-Uk
• Lim Jung-Hun
• Kim Ik-Hee

Classifications

• H10P70/80

  Cleaning only by supercritical fluids · CPC title

• H10P70/23

  during, before or after processing of insulating materials · CPC title

• H10P50/283 Primary

  by chemical means · CPC title

• H10D84/038

  using silicon technology, e.g. SiGe · CPC title

• H10D84/016

  the components including vertical IGFETs · CPC title