Texture-etchant composition for crystalline silicon wafer and method for texture-etching (1)

Patent metadata

Field	Value
Publication number	US-9305792-B2
Application number	US-201113816308-A
Country	US
Kind code	B2
Filing date	Aug 12, 2011
Priority date	Aug 12, 2010
Publication date	Apr 5, 2016
Grant date	Apr 5, 2016

Abstract

Disclosed herein is an etching composition for texturing a crystalline silicon wafer, comprising, based on a total amount of the composition: (A) 0.1 to 20 wt % of an alkaline compound; (B) 0.1 to 50 wt % of a cyclic compound having a boiling point of 100° C. or more; (C) 0.00001 to 10 wt % of a silica-containing compound; and (D) residual water. The etching composition can maximize the absorbance of light of the surface of a crystalline silicon wafer.

First claim

What is claimed is:

1. An etching composition for texturing a crystalline silicon wafer, comprising, based on a total amount of the composition:
0.1 to 20 wt % of an alkaline compound;
0.1 to 50 wt % of a cyclic compound having a boiling point of 100° C. or more;
0.00001 to 10 wt % of a silica-containing compound; and
residual water,
wherein the cyclic compound having a boiling point of 100° C. or more is one or more selected from the group consisting of piperazine, N-methylpiperazine, N-ethylpiperazine, hydroxyethylpiperazine, N-(2-aminoethyl)piperazine, N,N′-dimethylpiperazine, morpholine, N-methylmorpholine, N-ethylmorpholine, N-phenylmorpholine, N-cocomorpholine, N-(2-aminoethyl)morpholine, N-(2-cyanoethyl)morpholine, N-(2-hydroxyethyl)morpholine, N-(2-hydroxypropyl)morpholine, N-acetylmorpholine, N-formylmorpholine, N-methymorpholine-N-oxide, picoline, N-methylpiperidine, 3,5-dimethylpiperidine, N-ethylpiperidine, N-(2-hydroxyethyl)piperidine, N-methyl-4-piperidone, N-vinyl-2-piperidone, N-methylpyrrolidine, N-methylpyrrolidone, N-ethyl-2-pyrrolidone, N-isopropyl-2-pyrrolidone, N-butyl-2-pyrrolidone, N-tert-butyl-2-pyrrolidone, N-hexyl-2-pyrrolidone, N-octyl-2-pyrrolidone, N-benzyl-2-pyrrolidone, N-cyclohexyl-2-pyrrolidone, N-vinly-2-pyrrolidone, N-(2-hydroxyethyl)-2-pyrrolidone, N-(2-methoxyethyl)-2-pyrrolidone, N-(2-methoxypropyl)-2-pyrrolidone, N-(2-ethoxyethyl)-2-pyrrolidone, N-methylimidazolidinone, dimethylimidazolidinone, N-(2-hydroxyethyl)-ethyleneurea, tetrahydrofuran, tetrahydrofurfurylalcohol, N-methylaniline, N-ethylaniline, N,N-dimethylaniline, N-(2-hydroxyethyl)aniline, N,N-bis-(2-hydroxyethyl)aniline, N-ethyl-N-(2-hydroxyethyl)aniline, N,N-diethyl-o-toluidine, N-ethyl-N-(2-hydroxyethyl)-m-toluidine, dimethylbenzylamine, γ-butyrolactone, tolyltriazole, 1,2,3-benzotriazole, 1,2,3-triazole, 1,2,4-triazole, 3-amino-1,2,4-triazole, 4-amino-4H-1,2,4-triazole, 1-hydroxybenzotriazole, 1-methylbenzotriazole, 2-methylbenzotriazole, 5-methylbenzotriazole, benzotriazole-5-carbonate, nitrobenzotriazole, and 2-(2H-benzotriazol-2-yl)-4,6-di-tert-butylphenol, and
wherein the silica-containing compound is one or more selected from the group consisting of liquid sodium silicate; liquid potassium silicate; and liquid lithium silicate.

2. The etching composition according to claim 1 , wherein the alkaline compound is one or more selected from the group consisting of potassium hydroxide, sodium hydroxide, ammonium hydroxide, tetrahydroxymethyl ammonium, and tetrahydroxyethyl ammonium.

3. The etching composition according to claim 1 , further comprising: 0.000001 to 10 wt % of a fluorine-based surfactant.

4. The etching composition according to claim 3 , wherein the fluorine-based surfactant is one or more selected from the group consisting of anionic fluorine-based surfactants including perfluoroalkyl carboxylates, perfluoroalkyl sulfonates, perfluoroalkyl sulfates, and perfluoroalkyl phosphates; cationic fluorine-based surfactants including perfluoroalkyl amines and perfluoroalkyl quaternary ammoniums; amphoteric ionic fluorine-based surfactants including perfluoroalkyl carboxybetaine and perfluoroalkyl sulfobetaine; and nonionic fluorine-based surfactants including fluoroalkyl polyoxyethylene and perfluoroalkyl polyoxyethylene.

5. The etching composition according to claim 1 , wherein the cyclic compound has a boiling point of 150° C. to 400° C.

6. A method of etching a crystalline silicon wafer by dipping and/or spraying the crystalline silicon wafer at 50˜100° C. for 30 seconds˜60 minutes using the etching composition of any one of claims 1 , 2 , 3 , 4 and 5 .

Assignees

• Hong Hyung-Pyo
• Lee Jae-Youn
• Lim Dae-Sung
• Dongwoo Fine Chem Co Ltd

Inventors

• Hong Hyung-Pyo
• Lee Jae-Youn
• Lim Dae-Sung

Classifications

• H10P50/00 Primary

  Etching of wafers, substrates or parts of devices · CPC title

• C09K13/00 Primary

  Etching, surface-brightening or pickling compositions (for glass C03C15/00, {C03C25/66; for mortars, concrete, artificial or natural stone or ceramics C04B41/5338}; for metallic material C23F, C23G1/00, C25F1/00; {for semi-conductors H10P52/40}) · CPC title

• C09K13/08

  containing a fluorine compound · CPC title

• Y02E10/50

  Photovoltaic [PV] energy · CPC title

• C09K13/06

  with organic material · CPC title